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Lattice theories defects

Catlow C R A and W C Mackrodt 1982. Theory of Simulation Methods for Lattice and Defect Energy Calculations in Crystals. In Lecture Notes in Physics 166 (Comput. Simul. Solids), pp. 3-20. [Pg.648]

Catlow, C. R. A., and W. C. Mackrodt (1982). Theory of simulation methods for lattice and defect energy calculations in crystals. In Lecture Notes in Physics, Vol. 166, Computer Simulation of Solids (C. R. A. Catlow and W. C. Mackrodt, eds.) Berlin Springer-Verlag, pp. 3-20. [Pg.465]

The serious defects of the simplifying approximations made in these lattice theories become apparent because of the failure to obtain significant improvement when attempts are made to remedy their most crude formulations. On the other hand, in rigorous formulations the lattice loses any real intuitive significance and the concomitant mathematical difficulties of the many-body problem are reintroduced. [Pg.240]

One can think of the blue phase as a lattice of double-twist tubes (which necessitates a lattice of disclinations) or a lattice of disclinations (which necessitates a lattice of double-twist tubes) [20]. Thus, a theory involving a lattice of double-twist tubes becomes implicitly a theory for a lattice of defects. [Pg.197]

Dislocation theory as a portion of the subject of solid-state physics is somewhat beyond the scope of this book, but it is desirable to examine the subject briefly in terms of its implications in surface chemistry. Perhaps the most elementary type of defect is that of an extra or interstitial atom—Frenkel defect [110]—or a missing atom or vacancy—Schottky defect [111]. Such point defects play an important role in the treatment of diffusion and electrical conductivities in solids and the solubility of a salt in the host lattice of another or different valence type [112]. Point defects have a thermodynamic basis for their existence in terms of the energy and entropy of their formation, the situation is similar to the formation of isolated holes and erratic atoms on a surface. Dislocations, on the other hand, may be viewed as an organized concentration of point defects they are lattice defects and play an important role in the mechanism of the plastic deformation of solids. Lattice defects or dislocations are not thermodynamic in the sense of the point defects their formation is intimately connected with the mechanism of nucleation and crystal growth (see Section IX-4), and they constitute an important source of surface imperfection. [Pg.275]

The requirement I > 2 can be understood from the symmetry considerations. The case of no restoring force, 1=1, corresponds to a domain translation. Within our picture, this mode corresponds to the tunneling transition itself. The translation of the defects center of mass violates momentum conservation and thus must be accompanied by absorbing a phonon. Such resonant processes couple linearly to the lattice strain and contribute the most to the phonon absorption at the low temperatures, dominated by one-phonon processes. On the other hand, I = 0 corresponds to a uniform dilation of the shell. This mode is formally related to the domain growth at T>Tg and is described by the theory in Xia and Wolynes [ 1 ]. It is thus possible, in principle, to interpret our formalism as a multipole expansion of the interaction of the domain with the rest of the sample. Harmonics with I > 2 correspond to pure shape modulations of the membrane. [Pg.149]

X-Ray irradiation of quartz or silica particles induces an electron-trap lattice defect accompanied by a parallel increase in cytotoxicity (Davies, 1968). Aluminosilicate zeolites and clays (Laszlo, 1987) have been shown by electron spin resonance (e.s.r.) studies to involve free-radical intermediates in their catalytic activity. Generation of free radicals in solids may also occur by physical scission of chemical bonds and the consequent formation of dangling bonds , as exemplified by the freshly fractured theory of silicosis (Wright, 1950 Fubini et al., 1991). The entrapment of long-lived metastable free radicals has been shown to occur in the tar of cigarette smoke (Pryor, 1987). [Pg.248]

Diffusion and migration in solid crystalline electrolytes depend on the presence of defects in the crystal lattice (Fig. 2.16). Frenkel defects originate from some ions leaving the regular lattice positions and coming to interstitial positions. In this way empty sites (holes or vacancies) are formed, somewhat analogous to the holes appearing in the band theory of electronic conductors (see Section 2.4.1). [Pg.135]

Much of the microscopic information that has been obtained about defect complexes that include hydrogen has come from IR absorption and Raman techniques. For example, simply assigning a vibrational feature for a hydrogen-shallow impurity complex shows directly that the passivation of the impurity is due to complex formation and not compensation alone, either by a level associated with a possibly isolated H atom or by lattice damage introduced by the hydrogenation process. The vibrational band provides a fingerprint for an H-related complex, which allows its chemical reactions or thermal stability to be studied. Further, the vibrational characteristics provide a benchmark for theory many groups now routinely calculate vibrational frequencies for the structures they have determined. [Pg.155]

The remainder of Section I is devoted to a rather brief review of earlier work in the field in order to gain a little perspective. In Sections II to IV the basic results of the cluster method are derived. In Section V a very brief account of the application of the formal equations to some systems with short-range forces is given. Section VI is devoted to a review of the application to systems with Coulomb forces between defects, where the cluster formalism is particularly advantageous for bringing the discussion to the level of modern ionic-solution theory.86 Finally, in Section VII a brief account is given of Mayer s formalism for lattice defects69 since it is in certain respects complementary to that principally discussed here. We would like to emphasize that the material in Sections V and VI is illustrative of the method. This is not meant to be an exhaustive review of results obtainable. [Pg.2]

Although the theory of solutions has been widely used in formulating problems of defects in solids the problems encountered differ in certain respects. The most obvious point is that defects are restricted to discrete lattice sites, whereas the ions in a solution can occupy any position in the fluid. Sometimes no allowance is made for this fact. For example, it has not been demonstrated that at very low concentrations, in the absence of ion-pair effects, the activity coefficients are identical with those of the Debye-Hiickel theory. It can be plausibly argued51 that at sufficiently low concentrations the effect of discreteness is likely to be negligible, but clearly in developing a theory for any but the lowest concentrations the effect should be investigated. A second point... [Pg.44]

We now introduce a Fourier transform procedure analogous to that employed in the solution theory, s 62 For the purposes of the present section a more detailed specification of defect positions than that so far employed must be introduced. Thus, defects i and j are in unit cells l and m respectively, the origins of the unit cells being specified by vectors R and Rm relative to the origin of the space lattice. The vectors from the origin of the unit cell to the defects i and j, which occupy positions number x and y within the cell, will be denoted X 0 and X for example, the sodium chloride lattice is built from a unit cell containing one cation site (0, 0, 0) and one anion site (a/2, 0, 0), and the translation group is that of the face-centred-cubic lattice. However, if we wish to specify the interstitial sites of the lattice, e.g. for a discussion of Frenkel disorder, then we must add two interstitial sites to the basis at (a/4, a/4, a]4) and (3a/4, a/4, a/4). (Note that there are twice as many interstitial sites as anion-cation pairs but that all interstitial sites have an identical environment.) In our present notation the distance between defects i and j is... [Pg.50]


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