ISFETs transistors

The ISFET is an electrochemical sensor based on a modification of the metal oxide semiconductor field effect transistor (MOSFET). The metal gate of the MOSFET is replaced by a reference electrode and the gate insulator is exposed to the analyte solution or is coated with an ion-selective membrane as illustrated in Fig. 

ISFET Ion-selective field effect transistor LIBS Laser-induced breakdown... 

Fig. 2.16. Ion-sensitive field effect transistor (intersection and symbol), (a) n-p-n transistor, (b) IGFET (MOSFET), (c) ISFET.

The working principle of LAPS resembles that of an ion-selective field effect transistor (ISFET). In both cases the ion concentration affects the surface potential and therefore the properties of the depletion layer. Many of the technologies developed for ISFETs, such as forming of ion-selective layers on the insulator surface, have been applied to LAPS without significant modification. 

ISFETs), 3 799 9 585 74 24. See also Field effect transistors (FETs) Ion-selective membranes, cavities in, 9 584 Ion size, cluster glass transition and, 74 469, 470... 

Explain the main mechanistic differences between a glass membrane electrode and an ion-sensitive field effect transistor (ISFET). 

The measurement of changes of the surface potential Vo at the interface between an insulator and a solution is made possible by incorporating a thin film of that insulator in an electrolyte/insulator/silicon (EIS) structure. The surface potential of the silicon can be determined either by measuring the capacitance of the structure, or by fabricating a field effect transistor to measure the lateral current flow. In the latter case, the device is called an ion-sensitive field effect transistor (ISFET). Figure 1 shows a schematic representation of an ISFET structure. The first authors to suggest the application of ISFETs or EIS capacitors as a measurement tool to determine the surface potential of insulators were Schenck (15) and Cichos and Geidel (16). 

The ion-selective field-effect transistor (ISFET) represents a remarkable new construction principle [7, 63], Inverse potentiometry with ion-selective electrodes is the electrolysis at the interface between two immiscible electrolyte solutions (ITIES) [28, 55],... 

Ion-selective electrodes are systems containing a membrane consisting basically either of a layer of solid electrolyte or of an electrolyte solution whose solvent is immiscible with water. The membrane is in contact with an aqueous electrolyte solution on both sides (or sometimes only on one). The ion-selective electrode frequently contains an internal reference electrode, sometimes only a metallic contact, or, for an ion-selective field-effect transistor (ISFET), an insulating and a semiconducting layer. In order to understand what takes place at the boundary between the membrane and the other phases with which it is in contact, various types of electric potential or of potential difference formed in these membrane systems must first be defined. 

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