Ion-implantation technique

H. Ryssel and H. Glawischung, eds.. Ion Implantation Techniques, Spriager-Vedag, New York, 1982. 

MOSFETT s, and silicon oxide is deposited. The source/drain positions where electrical contact is to be made to the MOSFETs are defined, using the oxide-removal mask and an etch process. For shallow trench isolation, anisotropic silicon etch, thermal oxidation, oxide fill and chemical mechanical leveling are the processes employed. For shallow source/drains formation, ion implantation techniques are still be used. For raised source/drains (as shown in the above diagram) cobalt silicide is being used instead of Ti/TLN silicides. Cobalt metal is deposited and reacted by a rapid thermal treatment to form the silicide. Capacitors were made in 1997 from various oxides and nitrides. The use of tantalmn pentoxide in 1999 has proven superior. Platinum is used as the plate material. 

Two types of Na+ ISFET have been reported so far. One was an inorganic sodium-aluminum-silicate (NAS) glass ISFET, which was fabricated by the hydrolysis of a mixed solution of metal alcoholates, followed by thermal treatment (2), or by the ion implantation technique (3,4). The other type of Na+ ISFET was prepared by coating with so-called solvent polymeric membrane, such as polyvinyl chloride (PVC) membrane. 

There is a less common but important method called the metal ion implantation technique for metallofullerene synthesis. This technique... 

Visible Light Sensitization by Metal Ion Implantation Techniques... 

The possibility of the formation of gaseous reaction products in ion-bombarded solids exists either in the case of two different implanted elements reacting with each other or the implanted ions reacting with constituents of the target. There are two fields where such reactions play a major role. The first one is the fusion research where one expects hydrogen to react with the wall constituents of a fusion reactor, the second one is cosmochemistry where one knows that solar wind reacts at the surface of the moon or planets. In both cases the ion implantation technique is able to simulate the real processes. 

However, we do not know exactly to what extent simulated amorphous atomic structures depend upon the rate of quenching. It is known, for example, that in the ion implantation technique for the preparation of amorphous metals, one can achieve effective rates of cooling of 10 K/s (see, e.g. Ref. [15], p. 27) which is already close to that achievable in computer simulations. The resulting atomic structures are basically the same as those obtained by quenching techniques with six orders of magnitude smaller rates of cooling. 

Endofullerenes like Li C6o can further be obtained by ion implantation techniques. High- energy ions of the desired element are targeted at a thin film of fullerenes. However, the produced amounts are smaU and accordingly the analysis of products is complicated. 

The principle of this method is to select by mass spectroscopy a positively charged ion, for example l95Pt+, which is implanted by ion bombardment of a given support (Table I) (72). The ion-implantation technique is simpler when single crystals are used, for instance, Mg(100) (72). 

On the basis of the above survey surface application of Nb of a high concentration may be effective to enhance the formation of Al203.This hypothesis was confirmed by using an ion-implantation technique. The results are shown in Fig. 6 [40], where the Nb-implanted specimen with a maximum surface concentration of 35 mole% Nb shows an excellent oxidation resistance during thermal cycle with temperature varying between room temperature and 1200 K for at least up to 10 cycle (200 h). The scale was virtually AI203 and its structure was similar to that shown in Fig. 3, and did not show any spallation during the cyclic oxidation. 

The success of the non-equilibrium CVD growth technique for the homo- and hetero-epitaxial growth of SiC has been the major thrust of the last decade. Many of the potential applications of SiC in semiconductor electronics depend upon ion-implantation techniques for device fabrication. Several authors [101-118] have reported studies of the lattice damage induced by ion-implantation or by fast-particle irradiation, and of lattice damage recovery, after the seminal work of Makarov [119]. 

Ion implantation techniques can lead to nitrides having extremely high nitrogen to metal ratio such as TiNi.s but these phases are probably metastable. 

A novel organic (chitosan) and inorganic (tetraethyl orthosilicate) composite membrane has been prepared, which is pH sensitive and drug permeable [258]. The latter possibly involved in ionic interactions. By plasma source ion implantation technique, the adhesion between linear low-density polyethylene and chitosan could be improved [259]. Such bilayer films showed 10 times lower oxygen permeability, a property of use in food packaging applications. These multilayer films were easily recyclable. 

In addition to previously mentioned processes, the production of N-doped HO2 nanomaterials has been reported through other methods. These processes are ball milling of Ti02 in a NH3 water solution [413], heating Ti02 under NH3 flux at 500-600°C [414, 415], calcination of the hydrolysis product of Ti(S04)2 with ammonia as precipitator, decomposition of gas-phase TiCU with an atmosphere microwave plasma torch [416], ion implantation techniques with nitrogen [417] and N2 gas flux [418] (see Table 8). 

T. Yamaki, T. Umebayashi, T. Sumita, S. Yamamoto, M. Maekawa, A. Kawasuso, H. Itoh, Fluorine-doping in titanium dioxide by ion implantation technique . Nuclear Instruments and Methods in Physics Research, Sect. B, 206, 254-258, (2003). 

---