Ion beam-induced reaction

Photon- and Ion-Beam-Induced Reactions in Metallo-organic Films Microchemistry to Microelectronics... 

B. Ion Beam-Induced Reactions of Metal Thin Films and BP... 

Reactions were induced by energetic heavy ion bombardments from LN2 temperature to 300°C. A metal-rich mixed binary phase was also formed in the ion beam-induced reactions at 200°C, whereas an amorphous layer with the same composition was formed by the bombardments at RT. The crystalline phase has the same compositions and X-ray diffraction patterns for thermal and ion beam-induced reactions. The reaction progress in the thermal process depends approximately linearly on the duration of the annealing time with an activation energy = 1.3 0.3 eV. A linear dependence of the reacted thickness on the ion fluence was observed between RT and 300°C. An activation energy of = 0.31 0.06 eV was observed in the ion beam-induced process above 100°C. 

N Kobayashi, Y Kumashiro, P Revesz, J Li, JW Mayer. Thermal and ion beam induced reactions in Ni thin films on BP (100). Appl Phys Lett 54 1914, 1989. 

In addition to molecular imaging and such obvious advances as increased mass range and higher transmission analyzers, there are a number of new topics in molecular SIMS emerging as areas of interest. Not least of these is the study of chemical reactions at surfaces, which may be one source of the beam damage seen at high primary ion fluxes. A spectacular example of ion-beam-induced... 

Another area of SIMS that has received a great deal of attention is the study of simple inorganic salts. Marien and De Pauw (92) have looked at the ion-beam-induced effects in SIMS spectra. It is clear that under high ion fluxes significant damage to the surface occurs, with the resulting complication of the spectrum. FAB, or liquid-matrix SIMS, is free of this effect but has the equivalent complication of reactions with the matrix, as discussed previously. 

I2S. S. Pignataro and G. Marietta, Ion beam induced chemical reactions at polymer surfaces, in Metallized Plastics, Vol, 2 (K, L. Mittal, ed.). Plenum Press, New York, 1991. pp. 269-281. 

K has been identified as CFl200I-I from its chemistry the reaction mechanism is insertion [115], Collision-induced dissociation (in a SIFT apparatus, a triple-quadnipole apparatus, a guided-ion beam apparatus, an ICR or a beam-gas collision apparatus) may be used to detemiine ligand-bond energies, isomeric fomis of ions and gas-phase acidities. 

A beam of charged particles (an ion beam) with an energy from a few hundred keV to several MeV is produced in an accelerator and bombards a sample. Nuclear reactions with low-Z nuclei in the sample are induced by this ion beam. Products of these reactions (typically p, d, t, He, a particles, and y rays) are detected, producing a spectrum of particle yield versus energy. Many (p, a) reactions have energies that are too low for efficient detection. In these cases, the associated y rays are detected instead. Important examples are ... 

Another important characteristic is that ion beams can produce a variety of the secondary particles/photons such as secondary ions/atoms, electrons, positrons. X-rays, gamma rays, and so on, which enable us to use ion beams as analytical probes. Ion beam analyses are characterized by the respectively detected secondary species, such as secondary ion mass spectrometry (SIMS), sputtered neutral mass spectrometry (SNMS), electron spectroscopy, particle-induced X-ray emission (PIXE), nuclear reaction analyses (NRA), positron emission tomography (PET), and so on. 

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