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Interference lithography

Xia DY, Brueck SRJ (2004) A facile approach to directed assembly of patterns of nanoparticles using interference lithography and spin coating. Nano Lett 4 1295-1299... [Pg.98]

With interference lithography (IL) a resist layer is exposed by an interference pattern generated by two obliquely incident laser beams, which is used to expose a photoresist layer without the use of a mask (see section... [Pg.273]

O Reilly TB, Smith HI (2008) Linewidth uniformity in Lloyd s mirror interference lithography systems. J Vac Sci Technol B 26 2131... [Pg.31]

Abstract In solar applications microstructured polymer surfaces can be used as optically functional devices. Examples are antireflective surfaces, dayUghting, sun protection systems, concentrator photovoltaic modules and light trapping structures in organic solar cells. The examples and the principles of function of the respective microstmctures are described in detail. The suitability of different manufacturing methods is discussed. Two of them, ultraprecision machining and interference lithography are described. For the latter experimental results are shown. Finally, the opportunities and the risks of the shown approaches are discussed. [Pg.263]

F. 10 Cross section of a microprism substrate with a structure period of 20pm originated by interference lithography, carrying a microgrid and coated with the polymer anode (SEM image)... [Pg.274]

As a result, none of the above-mentioned origination technologies is used for the origination of master structures for the applications mentioned in Sect. 2 to date. For these applications, ultraprecision machining and interference lithography... [Pg.275]

Interference lithography makes use of the interference pattern which is formed when two or more coherent light waves are superposed. In a t3q>ical optical set-up, a laser is used as a source for UV radiation. The laser beam is spht into two beams. Each of the beams is directed by mirrors towards a substrate coated with photoresist where the beams are superposed after being expanded. Two interfering beams produce a ID grating with a sinusoidal intensity distribution. To this intensity pattern the UV-sensitive photoresist is exposed. After exposure the photoresist plate is developed where exposed or unexposed. Photoresist is removed depending on the type of photoresist. As the intensity profile is sinusoidal continuous microstructure profiles will result in general. [Pg.276]

Fig. 11 Sketch of an interference lithography set-up. Also shown are the different possibilities to influence the resulting photoresist profiles (a) change of angle between the interfering beams, (b) double exposures with intermediate rotation of the photoresist plate, (c) asymmetric angles of incidence, and (d) use of a diffusor... Fig. 11 Sketch of an interference lithography set-up. Also shown are the different possibilities to influence the resulting photoresist profiles (a) change of angle between the interfering beams, (b) double exposures with intermediate rotation of the photoresist plate, (c) asymmetric angles of incidence, and (d) use of a diffusor...
Fig. 12 SEM pictures of two microstructures which were originated by interference lithography (a) prism array structure in photoresist, (b) replica of a CPC array in poly(methyl methacrylate) (PMMA) partly coated with metal... Fig. 12 SEM pictures of two microstructures which were originated by interference lithography (a) prism array structure in photoresist, (b) replica of a CPC array in poly(methyl methacrylate) (PMMA) partly coated with metal...
Interference lithography using electron beams is another possible path for patterning arrays with nanometer-scale periods. A key advantage of using electrons over photons in interferometry is the much shorter wavelength for the same energy. [Pg.81]

Figure 2.6 Control of the graft polymerization as determined with step height measurements of the brush dry tMckness. ETFE substrates were activated with EUV interference lithography. In most cases, the data points roughly follow a square root dependence on the exposure dose. The brush thickness was also influenced by (A) the pH of the graft solution (aqueous solution of methacrylic acid), (B) the viscosity of the solution (GMA in dioxane), controlled by addition of PEG, and (C) the addition of a RAFT agent to the monomer solution (GMA in methylethyl ketone). For details, see the text. Source Figure compiled from Neuhaus et al. [14] and Parquet et al. [15,16] with permission from Elsevier Ltd. and ACS. Figure 2.6 Control of the graft polymerization as determined with step height measurements of the brush dry tMckness. ETFE substrates were activated with EUV interference lithography. In most cases, the data points roughly follow a square root dependence on the exposure dose. The brush thickness was also influenced by (A) the pH of the graft solution (aqueous solution of methacrylic acid), (B) the viscosity of the solution (GMA in dioxane), controlled by addition of PEG, and (C) the addition of a RAFT agent to the monomer solution (GMA in methylethyl ketone). For details, see the text. Source Figure compiled from Neuhaus et al. [14] and Parquet et al. [15,16] with permission from Elsevier Ltd. and ACS.
Auzelyte V, Dais C, Parquet P, Grutzmacher D, Heyderman LJ, Luo F, et al. Extreme ultraviolet interference lithography at the Paul Scherrer Institut. J Micro-Nanolithogr Mems Moems 2009 8 2. [Pg.39]

Langner A, Paivanranta B, Terhalle B, Ekinci Y. Fabrication of quasiperiodic nanostructures with EUV interference lithography. Nanotechnology 2012 23(10) 6. [Pg.39]

Poly(acrylic acid) (PAA) brushes are also strongly swellable in water, particularly at neutral to basic pH, at which the carboxylic acid moieties are dissociated. Micro- and nanostructured brushes of PAA were prepared on ETFE foils using EUV interference lithography for activation. Microperoxidase 11 (MPl 1) is a heme-containing undecapeptide produced... [Pg.75]

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See also in sourсe #XX -- [ Pg.263 ]

See also in sourсe #XX -- [ Pg.81 , Pg.93 ]



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