Interface state generation

Fleetwood et al. 1992). This degradation is related to the radiation-induced oxide charge buildup in the oxide layer and interface state generation at the Si/Hf02 interface. 

Figure 32. Shapes of PMC curves and photocurrent curves in a p+n junction formed from an n-type material by allowing in-diffusion of an acceptor (boron). The absence of interface states (sr = 0) generates a strong overlapping of the two curves.

The feedback mode [Fig. 2(a)] is one of the most widely used SECM techniques, applicable to the study of interfacial ET processes. The basic idea is to generate a species at the tip in its oxidized or reduced state [generation of Ox] in Fig. 2(a)], typically at a diffusion-controlled rate, by electrolysis of the other half of a redox couple (Redj). The tip-generated species diffuses from the UME to the target interface. If it undergoes a redox... 

Some metastable centers may be associated with doped layers or with interface states. The light-induced generation of these centers appears to increase the surface recombination velocity in some cells, causing a decrease in the spectral response at short wavelengths. This effect and the others mentioned above are reversible annealing the a-Si H cells at 200°C for several minutes restores the cells to their initial conditions. 

Minimization of the density of slow states and interface states is of technological importance for held effect transistors. Presently available nitrides are of sufficient quality that the slow states have no signihcant effect on electrons at normal temperatures, but some hole trapping occurs. The use of a bottom nitride structure reduces the interface state density to an almost negligible amount. The remaining problem associated with the interface of the transistors is the generation of metastable interface defects in the a-Si H him due to the accumulation bias. 

Due to the technological importance of metal-insulator-semiconductor (MIS) devices, understanding of the nature of their electrical characteristics such as current-voltage (1-V) and tunnel magnetoresistance (TMR) is of great interest. Unless intentionally fabricated, a silicon Schottky diode possesses a thin interfacial oxide layer between the metal and the semiconductor. Additionally, a density of interface states is always generated at the boundary between the semiconductor and insulator. 

The details of the formation of the interfacial layer are the focus of this section without concurrently emphasizing the processes which generate the interface stated. This separation better allows the individual aspects to be identified, but should not imply a decoupling of the two phenomena. The interface layer can have a multiplicity of zones with a division between metallic and semiconducting regions, as depicted in Fig. 3.19. 

An important high-level synthesis problem is the automatic generation of interface control logic [7, 8]. The problem can be stated as follows given two compatible interface specifications, generate the sequential logic that will be... 

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