Indium reactivity

The Model 412 PWR uses several control mechanisms. The first is the control cluster, consisting of a set of 25 hafnium metal rods coimected by a spider and inserted in the vacant spaces of 53 of the fuel assembhes (see Fig. 6). The clusters can be moved up and down, or released to shut down the reactor quickly. The rods are also used to (/) provide positive reactivity for the startup of the reactor from cold conditions, (2) make adjustments in power that fit the load demand on the system, (J) help shape the core power distribution to assure favorable fuel consumption and avoid hot spots on fuel cladding, and (4) compensate for the production and consumption of the strongly neutron-absorbing fission product xenon-135. Other PWRs use an alloy of cadmium, indium, and silver, all strong neutron absorbers, as control material. 

Among all the nucleophilic addition reactions of carbonyl compounds, allylation reaction has been the most successful, partly due to the relatively high reactivity of allyl halides. Various metals have been found to be effective in mediating such a reaction (Scheme 8.4). Among them, indium has emerged as the most popular metal for such a reaction. 

The indium-mediated allylation of trifluoroacetaldehyde hydrate (R = H) or trifluoroacetaldehyde ethyl hemiacetal (R = Et) with an allyl bromide in water yielded a-trifluoromethylated alcohols (Eq. 8.56).135 Lanthanide triflate-promoted indium-mediated allylation of aminoaldehyde in aqueous media generated (i-airiinoalcohols stereoselectively.136 Indium-mediated intramolecular carbocyclization in aqueous media generated fused a-methylene-y-butyrolactones (Eq. 8.57).137 Forsythe and co-workers applied the indium-mediated allylation in the synthesis of an advanced intermediate for azaspiracids (Eq. 8.58).138 Other potentially reactive functionalities such as azide, enone, and ketone did not compete with aldehyde for the reaction with the in situ-generated organo-indium intermediate. 

O. Marcovitch, Z. Klein, and I. Lubezky, Transparent conductive indium oxide films deposited on low temperature substrates by activated reactive evaporation, Appl. Opt., 28 2792-2795 (1989). 

S. Honda, M. Watamori, and K. Oura, The effects of oxygen content on electrical and optical properties of indium tin oxide films fabricated by reactive sputtering, Thin Solid Films, 281-282 206-208, 1996. 

L.J. Meng and M.P. dos Santos, Properties of indium tin oxide films prepared by rf reactive magnetron sputtering at different substrate temperature, Thin Solid Films, 322 56-62, 1998. 

Al, Ga, In and T1 differ sharply from boron. They have greater chemical reactivity at lower temperatures, well-defined cationic chemistry in aqueous solutions they do not form numerous volatile hydrides and cluster compounds as boron. Aluminium readily oxidizes in air, but bulk samples of the metal form a coherent protective oxide film preventing appreciable reaction aluminium dissolves in dilute mineral acids, but it is passivated by concentrated HN03. It reacts with aqueous NaOH, while gallium, indium and thallium dissolve in most acids. 

Indium also has many of the characteristics that make Al and Ga very useful for such applications. Particularly important is its capacity to dissolve Si, Ge and several lanthanide and transition metals, producing highly reactive forms of the elements. Moreover In does not form binaries with Si and Ge and has a low-melting point. RNiGe2 compounds, for instance, were prepared from stoichiometric quantities of the components in fine powder mixed with a 10 fold quantity of In in alumina tubes. These, flame sealed in fused silica tubes, were slowly heated to 1000°C, held at this temperature for a few hours, ramped down to 850°C, held for an additional 4 days and finally cooled down to room temperature over the course of another 4 days. Compound isolation from the In excess was performed by centrifugation at 300°C through a coarse frit. Further purification was carried out by a 15-minute submersion and sonication in 6 M aqueous HC1 (Salvador et al. 2004). 

Other commonly employed redox electrodes are metals such as copper, cobalt, silver, zinc, nickel, and other transition metals. Some p-block metals such as tin, lead and indium can also function as redox electrodes. However, s-block metals such as magnesium do not make good redox electrodes since the elemental metal is reactive and forms a layer of oxide coating, which leads to poor reproducibility, poor electronic conductivity and electrode potentials that are difficult to interpret, (see Section 3.3.1). 

Although photochemically induced cleavage of Al—C bonds in the aluminum porphyrin complexes has been exploited in several applications, relatively little is known about the intimate mechanism of this process. Similar reactivity is observed for the organo-gallium and indium porphyrins, and for these elements... 

In this section, we will discuss organometallic derivatives of zinc, cadmium, mercury, and indium. The group IIB and IIIB metals have the d10 electronic configuration in the 2+ and 3+ oxidation states, respectively. Because of the filled d level, the 2+ or 3+ oxidation states are quite stable, and reactions of the organometallics usually do not involve changes in oxidation level. This property makes the reactivity patterns of these organometallics more similar to those of derivatives of the group IA and IIA metals than to those of derivatives of transition metals with vacancies in the d levels. The IIB metals, however, are... 

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