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Holes in valence band

Holes in valence band (hvb ) are strong oxidants, while electrons in conductance band (Ccb ) act as reductants. Holes in valenee band reaets with H2O or hydroxyl ions on the surface and producing OH radicals ... [Pg.27]

Mm M atom on M site X atom on X site M atom on interstitial site X atom on interstitial site impurity N on M site vacancy on M site vacancy on X site vacant interstitial site electron in conduction band - electron hole in valence band... [Pg.43]

Fig. 2.2. Energy levels in a solid-state material. Interaction with incident X-ray (A) causes excitation of electron in molecule (B), leaving hole in valence band... Fig. 2.2. Energy levels in a solid-state material. Interaction with incident X-ray (A) causes excitation of electron in molecule (B), leaving hole in valence band...
Fig. 2.3. Production of signal in a photoconductor detector. Electrons in conduction band and holes in valence band drift under influence of an externally applied electric field... Fig. 2.3. Production of signal in a photoconductor detector. Electrons in conduction band and holes in valence band drift under influence of an externally applied electric field...
A cation vacancy will be opposite to this in behavior. Removal of a neutral metal atom from a material will involve removal of a cation plus the correct number of electrons, which are taken from the valence band. Cation vacancies will therefore be represented as acceptor levels situated near to the valence band together with an equivalent number of holes in the band. These materials are p-type semiconductors. [Pg.464]

Similarly, one can derive an equation for a p-type semiconductor, where the distance between the Fermi energy level and the valence band is a logarithmic function of acceptor impurity concentration. As the acceptor impurity increases so too does the hole concentration in valence band, with the Fermi level moving closer to the valence band. [Pg.129]

The fact that the temperature domain of positive Seebeck coefficients below Ty, see Fig. 6, is wiped out by x = 0.01 shows that a donor state associated with an F ion lies above the top of the FeB-ai(J,) valence band in the low-temperature phase it charge compensates the holes in that band. This, in turn, means that the clusters of an F" ion... [Pg.28]

Interest in d-band semiconductors derives from the fact that holes in d bands are not equivalent to broken chemical bonds and thus do not constitute a primary pathway for photocorrosion as in the case of semiconductors (e.g., CdS) with p-orbital derived valence bands.33,541,542 Thus M0S2,541,542 WS2,541,542 PtS2,543 RuS2 33,532-534... [Pg.204]

In an ideal and perfect crystal, all of the electrons would sit on the lowest energy level and energy levels in valence band are completely occupied and conduction bands include no electrons, namely be empty hole. However, in a practical crystal, due to the existence of point defects, which result in the electron current carriers in conduction bands and hole current carriers in valence bands, of which the former is expressed by e and the latter by h. These electrons and holes are also one kind of defects, called as electronic defects. [Pg.211]

Figure 3.2 Fermi-Dirac distribution function and corresponding distribution of electrons and holes in valence and conduction band at T = 0 K and T > 0 K... Figure 3.2 Fermi-Dirac distribution function and corresponding distribution of electrons and holes in valence and conduction band at T = 0 K and T > 0 K...
The electrons in the VB of the photocatalyst are excited to the CB, while the holes are left in the VB. This, therefore, creates the negative-electron (e ) and positive-hole (h ) pairs. This stage is referred to the semiconductor s "photo-excited" state and the so-called "band gap" (Eg) is located between the highest occupied energy band, called valence band (VB), and the lowest empty band, called conduction band (CB). Aftthout excitation, both the electrons and holes are in valence band. The photogenerated electrons and holes can recombine in the bulk... [Pg.248]

ABCD. What is common to all the sequences is that they all start with the transfer of a band electron k to one of the ions, which produces a hole in the band but leads to different intermediate states in the perturbation Hamiltonian matrix depending on the sequence. The intermediate state after the first virtual transition should correspond to one magnetic ion with N and the second with N -F 1 electrons. The virtual state after the second transition may be of two different types, either N -F 1 electrons on both ions and two holes in the valence band (ABCD, ABDC, BACD, or BADC) or one ion with N + 1 and the other with N — 1 electrons and no holes in the valence band (ACBD or CADB). The unperturbed valence band states, which must be summed up over the entire Brillouin zone, are typically described within the empirical tight-binding model [64]. [Pg.306]

Electron transfer between redox systems within the electrolyte and the metal surface covered by a passivating oxide layer with band gap (E ), conduction band (CB), and valence band (VB) (1) Direct tunneling into free states of the CB, (2) tunneling through the space charge layer to the conduction band CB, (3) hopping via surface states to CB, (4) multiple hopping via interband states, (5) transfer via a subband SB, and (6) transfer into positive holes of valence band VB. (From Strehblow, in Passivity of Metals, R.C. Alkire, D.M. Kolb, eds., Wiley-VCH,... [Pg.292]

Electronic and optical excitations usually occur between the upper valence bands and lowest conduction band. In optical excitations, electrons are transferred from the valence band to the conduction band. This process leaves an empty state in the valence band. These empty states are called holes. Conservation of wavevectors must be obeyed in these transitions + k = k where is the wavevector of the photon, k is the... [Pg.114]

A DIET process involves tliree steps (1) an initial electronic excitation, (2) an electronic rearrangement to fonn a repulsive state and (3) emission of a particle from the surface. The first step can be a direct excitation to an antibondmg state, but more frequently it is simply the removal of a bound electron. In the second step, the surface electronic structure rearranges itself to fonn a repulsive state. This rearrangement could be, for example, the decay of a valence band electron to fill a hole created in step (1). The repulsive state must have a sufficiently long lifetime that the products can desorb from the surface before the state decays. Finally, during the emission step, the particle can interact with the surface in ways that perturb its trajectory. [Pg.312]


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See also in sourсe #XX -- [ Pg.27 ]




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Valence band

Valence band holes

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