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High pressure photoconductivity

Figure 48 High pressure cell for photoconductivity measurements. (Redrawn from Katoh, R., Lacmann, K., Schmidt, W.F., Chem. Phys, 195, 457,1995.)... Figure 48 High pressure cell for photoconductivity measurements. (Redrawn from Katoh, R., Lacmann, K., Schmidt, W.F., Chem. Phys, 195, 457,1995.)...
Application of high pressure changes the position of the electronic conduction level, Vq (see Section 6.9), and it increases the dielectric constant of the liquid. Both effects have an influence on the ionization energy of a solute. The dependence of Vo(p) is complicated and experimental data must be used. The effect of pressure on the dielectric constant is due to the increase in density and it is well described by the Clausius-Mossotti equation (see Section 1.6). In Figure 8a the photoconductivity spectrum of TMPD in neohexane is shown as a function of pressure. The variation of the photoconductivity threshold with pressure is depicted in Figure 8b. Evaluation of the data by means of Bom s formula (Chapter 7, Equation 94) led to the hypothesis that an additional increase of liquid density around the solute molecule due to fluctuations is responsible for the observed shifts (Katoh et al., 1995). [Pg.165]

An important application of polydimethylsilane is as a source of silicon carbide (SiC) fibres, which are manufactured under the trade-name Nicalon by Nippon Carbon in Japan. Heating in an autoclave under pressure converts polydimethylsilane to spinnable polycarbosilane (-Me2Si-CH2-) with elimination of methane. The spun fibres are then subjected to temperatures of 1200-1400 °C to produce silicon carbide fibres with very high tensile strengths and elastic moduli." As a result of their conductivity, polysilanes have also been used as hole transport layers in electroluminescent devices. In addition, the photoconductivity of polymethylphenylsilane doped with Cgo has been found to be particularly impressive. ... [Pg.169]

It was observed that the increase of photoconductivity under illumination was retarded by high oxygen pressure that is, the photoconductivity, at a given time and intensity of illumination, has a lower value if the oxygen pressure is high. On the other hand, decay of the induced conductivity was hastened by increased oxygen pressure. Nitrogen, water vapor, or carbon dioxide had no effect. [Pg.295]


See other pages where High pressure photoconductivity is mentioned: [Pg.165]    [Pg.165]    [Pg.172]    [Pg.619]    [Pg.165]    [Pg.195]    [Pg.392]    [Pg.93]    [Pg.296]    [Pg.4]    [Pg.405]    [Pg.32]    [Pg.61]    [Pg.126]    [Pg.525]    [Pg.455]    [Pg.195]    [Pg.237]    [Pg.294]   


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