Growth boron nitrides

Kidner S., Taylor IIC. A., Clarke R., Low energy kinetic threshold in the growth of cubic boron nitride films, Appl. Phys. Lett., 64 (1994) pp. 1859-1861. 

Yokoyama H., Okamoto M. et al.. Effects of a negative self-bias on the growth of cubic boron nitride prepared by plasma chemical vapor deposition, Jpn. J. Appl. P/2yj., 30 (1991) pp. 344-348. 

Weber A., Bringmann U. et al.. Growth of cubic boron nitride and boron-carbon-nitrogen coatings using N-trimethylborazine in an electron cyclotron resonance plasma process, Diamond Relat. Mater., 2 (1993) pp. 201-206. 

Ronning C., Felderman H., Hofsass H., Growth, doping and applications of cubic boron nitride thin films, Diamond Relat. Mater., 9 (2000) pp. 1767-1773. 

Felderman H., Merk R., Hofsdss H., Ronning C., Zheleva T., Room temperature growth of cubic boron nitride, Appl. Phys. Lett., 74 (1999) pp. 1552-1553. 

While plasma-enhanced methods are very usefiil to lower the substrate temperature, the as-deposited films are typically less conformal and often contain more surface impurities than competing methods. In this method, reactive radicals, ions, and atoms/molecules are formed in the gas phase that interact with the relatively low-temperature substrate to generate a film. Some of the more recent applications for plasma CVD include growth of cubic boron nitride (c-BN) thin films. 

In this chapter, heteroepitaxial growth of diamond particles and films on cubic boron nitride (cBN), Ni, Co, Cu, TiC, BeO, NijSi, graphite, sapphire, and Si will be described. The crystal parameters of these and other materials are listed in Appendix E. 

Cubic boron nitride (cBN) has a zinc blende-type crystal structure with a lattice constant of 3.615 A, which is very close to that of diamond (3.567 A). The difference is only about 1.3%. According to RHEED measurements with the electron beam parallel to the 111 layer of cBN, a growth of diamond by DC plasma CVD on cBN(lll) [150] using c = 0.5%CH4/H2, T = 900°C, and F=180Torr led to a result that a smooth (111) layer of diamond was epitaxially deposited in such a way that the [110] direction of diamond was parallel to that of cBN. Namely, D 111 //cBN(lll and D[110]//cBN[110]. In the RHEED pattern, however, extra spots were observed, which were presumably due to the twinnings of (111 diamond layers. In the Raman spectra, there were two lines due to cBN at 1054.5 and... 

Not included in the production figures in Table 5.7-1, is the production of in-situ produced diamond coatings by gas phase pyrolysis (chemical vapor deposition, CVD), which are acquiring increasing industrial importance. The worldwide market for diamond-like- and CBN-coatings (CBN =cubic boron nitride) had a volume in 1993 of 40 million US, with an annual growth rate to 1998 of 30 to 40%. 

The synthesis of diamond and cubic boron nitride has strongly motivated improvements in the development of high-pressure equipment and increased the interest in these materials, which have exceptional properties. Single crystals are required for optical and electronic applications. Consequently, specific crystal-growth processes have been set up under very high-pressure conditions. The principle is similar to that described, at lower pressures, for the preparation of single crystals of a-Si02. 

W. P. Chai, Y. S. Gu, M. Li, Z. H. Mai, Q. Z. Li, L. Yuan, and S. J. Pang, Orientation influence of cubic boron nitride crystal facets on the epitaxial growth of diamond film by microwave plasma chemical vapor deposition, J. Cryst. Growth, 135(3-... 

S. Koizumi, T. Murakami, T. Inuzuka, and K. Suzuki, Epitaxial growth of diamond thin films on cubic boron nitride (111) surfaces by DC plasma chemical vapor deposition, Appl. Pl s. Lett, 57(6) 563-565 (1990)... 

Figure 47. Phase diagram of N2 on boron nitride based on adsorption isotherms coverage is repotted in units of the complete Vs mono-layer obtained from the top of the fluid to commensurate solid isotherm substep at low temperatures less than 51 K. Commensurate solid phase (C), fluid phase (F), reentrant fluid phase (RF). The solid lines correspond to phase boundaries based on measured features, the dotted line is an expected phase boundary, and the triangle marks the tricritical point. Second-layer growth instead of a transition to an incommensurate solid phase is expected beyond the reentrant fluid phase in the temperature range studied. (Adapted from Fig. 4 of Ref. 1.)...

Figure 48. Semilogarithmic plot of the isothermal compressibility of N2 on boron nitride at 60.8 K as a function of the coverage in units of the complete /3 monolayer. The peak sequence starting at low coverages is attributed to the fluid to commensurate solid F-C and commensurate solid to reentrant fluid C-RF transitions and finally to second-layer growth RF-B (instead of a transition from the reentrant fluid to an incommensurate solid phase). (Adapted from Fig. 5 of Ref. 1.)...

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