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Electron-cyclotron-resonance plasma

Microwave discharges at pressures below 1 Pa witli low collision frequencies can be generated in tlie presence of a magnetic field B where tlie electrons rotate witli tlie electron cyclotron frequency. In a magnetic field of 875 G tlie rotational motion of tlie electrons is in resonance witli tlie microwaves of 2.45 GHz. In such low-pressure electron cyclotron resonance plasma sources collisions between tlie atoms, molecules and ions are reduced and the fonnation of unwanted particles in tlie plasma volume ( dusty plasma ) is largely avoided. [Pg.2803]

ECR electron cyclotron resonance plasma RF radio frequency plasma DCGD direct current glow discharge plasma DHMy dimethylhydrazine SFs stacking faults, PL photoluminescence. [Pg.244]

Table 11.1. Physical properties of hydrocarbon films deposited with a remote electron cyclotron resonance plasma from three different C2Hz source gases at three different dc self-bias voltages 1% np represents the parallel component of the real part of the refractive index as measured by in situ ellipsometry. The film composition is obtained from ion-beam analysis. The total particle number densities nc and n-H are calculated from the stoichiometry and the film thickness. Deposition parameters pressure p = 0.2 Pa adjusted with gas flow at constant pumping speed, absorbed microwave power density P = 10 kW nT3 [17]... Table 11.1. Physical properties of hydrocarbon films deposited with a remote electron cyclotron resonance plasma from three different C2Hz source gases at three different dc self-bias voltages 1% np represents the parallel component of the real part of the refractive index as measured by in situ ellipsometry. The film composition is obtained from ion-beam analysis. The total particle number densities nc and n-H are calculated from the stoichiometry and the film thickness. Deposition parameters pressure p = 0.2 Pa adjusted with gas flow at constant pumping speed, absorbed microwave power density P = 10 kW nT3 [17]...
Single pulse, shock tube decomposition of acetic acid in argon inv olves the same pair of homogeneous, molecular first-order reactions as thermolysis (19). Platinum on grapliite catalyzes the decomposition at 500—800 K at low pressures (20). Ketene, methane, carbon oxides, and a variety of minor products are obtained. Photochemical decomposition yields methane and carbon dioxide and a number of free radicals, wliich have complicated pathways (21). Electron impact and gamma rays appear to generate these same products (22). Electron cyclotron resonance plasma made from acetic acid deposits a diamond [7782-40-3] film on suitable surfaces (23). The film, having a polycrystalline stmcture, is a useful electrical insulator (24) and widespread industrial exploitation of diamond films appears to be on the horizon (25). [Pg.66]

Weber A., Bringmann U. et al.. Growth of cubic boron nitride and boron-carbon-nitrogen coatings using N-trimethylborazine in an electron cyclotron resonance plasma process, Diamond Relat. Mater., 2 (1993) pp. 201-206. [Pg.451]

Ling, H. Wu, J.D. Sun, J. Shi, W. Ying, Z.F. Li, F.M. Electron cyclotron resonance plasma-assisted pulsed laser deposition of boron carbon nitride films. Diamond Relat. Mater. 2002, 11, 1623-1628. [Pg.1697]

C. R. Eddy, Jr., D. L. Youchison, and B. D. Sartwell, Comparison of (CH4-02)-H2 and CO-H2 plasmas for low temperature diamond film deposition by electron cyclotron resonance plasma-assisted chemical vapor deposition. Diamond Relal Mjter., 3(1-2) 105-1H (1994)... [Pg.167]

Lead phthalocyanine tetracarboxylic acid was used to sense humidity and alcohol vapors [63]. Remarkable improvement in the selectivity with respect to ethyl alcohol and reduction in the sensitivity for humidity was observed when the surface was treated with electron cyclotron resonance plasma. The response and recovery time were 50 and 30 seconds, respectively. The increased cross-linking of PbPc is responsible for the creation of new functional groups that have imparted the sensing of alcohol vapor through extrinsic doping. [Pg.85]

Zarrabian M, FourchesCoulon N, Turban G, Marhic C, Lancin M. Observation of nanocrystalline diamond in diamondlike carbon films deposited at room temperature in electron cyclotron resonance plasma. Appl Phys Lett 1997 70 2535-7. [Pg.22]

Figure 5.31 shows the absorbance of AIN films deposited on Si by electron cyclotron resonance plasma CVD at two reaction pressures [286], The strong... [Pg.459]

T Saitoh, T Yokogawa, T Narusawa. Reactive ion-beam etching of ZnSe and ZnS epitaxial-films using CI2 electron-cyclotron resonance plasma. Appl Phys Lett 56 839—841, 1990. [Pg.550]

DLC Films Deposited in an Electron Cyclotron Resonance Plasma Using a DC-Biased Screen Grid... [Pg.903]

Weber, A. Poeckelmann, R. Klages, C.P. (1995). Depxrsition of High-Quality TiN Using Tetra-Isopropoxide Titanium in an Electron Cyclotron Resonance Plasma Process. Appl. Phys. Lett, Vol. 67, pp. 2934-2935... [Pg.137]


See other pages where Electron-cyclotron-resonance plasma is mentioned: [Pg.66]    [Pg.163]    [Pg.165]    [Pg.106]    [Pg.65]    [Pg.212]    [Pg.403]    [Pg.471]    [Pg.165]    [Pg.379]    [Pg.92]    [Pg.1090]    [Pg.6137]    [Pg.211]    [Pg.909]    [Pg.319]   
See also in sourсe #XX -- [ Pg.275 ]




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