Glass undoped

Spray pyrolysis of ethanolic solutions of Fe(acetylacetone)3 or FeCls between 370°C and 450°C onto a glass substrate are reported for the fabrication of a-Fe20s thin-film photoanodes [75]. Upon illumination by a 150 W Xe lamp samples consistently demonstrate photocurrents of 0.9 mAcm , IPCE values up to 15%, and robust mechanical stability with no signs of photocorrosion for the undoped samples. With simultaneous multiple doping of 1% A1 and 5% Ti, an IPCE of 25% can be reached at 400 nm. Zn doping is known to induce p-type character in Ee20s thin film electrodes [76]. 

Fig. 4.28. Auger levels recorded using monochromatic A1 Ka radiation during sputter deposition of undoped ZnO onto a decapped Cu(In,Ga)Se2 sample. Vertical dashed lines indicate line positions from the clean substrate and from additional components occurring during ZnO deposition. The latter are indicated by ox. The In MNN spectra also includes the Na Is signal, which is due to diffusion of Na from the soda lime glass substrate...

Hamano et al. (1982) have fabricated an a-Si H photodiode array linear image sensor. The sensor structure is shown in Fig. 5. The sensor is constructed by first forming individual electrodes on a glass or a ceramic substrate. Then l-/mi-thick undoped a-Si H is produced at 230°C by glow-discharge decomposition of silane and finally 1500-A-thick ITO common electrode, which also acts as an antireflection coating, is deposited by dc sputtering. 

This paper reviews the optical properties of undoped and activated fluoride glasses for the period 1985-1998. First, the infrared transmission, Rayleigh scattering, and refractive indices of several fluoride glasses are given and discussed. For the sake of completeness, fundamental physical characteristics such as thermo-mechanical properties are also given, although they may have been published before this period. 

Other sensing applications include water sensing by direct absorption of the 3H4 —> 3F4 transition of Tm3+ at 1.47 /an [259] and alcohol sensing by evanescent wave in undoped fluoride glass fibers [260]. 

For metal, dielectric and semiconductor films fabrication, optical and silica glass are popular substrate materials because of their availability, cost-effectiveness, and inert character, i.e., they are stable in the required temperature range for common photonic, optoelectronic and photovoltaic applications, they do not chemically react with the prepared films, and the hard plane surface makes the formation of optically smooth thin films fairly easy. Generally, it is preferable to form films by a simple, low-temperature, inexpensive and environment friendly method. Sol-gel technique and thermal evaporation is found suitable for the preparation of film parts of efficient solar cells [1], emitters, transformers [2], detectors and modulators of light [3], as well as optically stimulated luminescence dosimeters [4]. Here, we present the experimental data on the resistance to high-power optical and ionizing irradiations of the undoped components of film compositions with nanociystais. 

It is well established that the degree of selectivity can vary extremely going from one dielectric to the other [Chow et al.67, Broadbent et al.131, Chow et al.133, Bradbury et al.134, Wilson et al.135]. Silicon nitride, for instance, is notorious for its low selectivity whereas phosphorous doped glasses show an improved selectivity compared with undoped glasses (see also section 3.5). 

Sacrificial oxide. The sacrificial oxide layer is deposited by low-pressure chemical vapor deposition (LPCVD) or plasma-enhanced chemical vapor deposition (PECVD). The layer is made of either undoped glass or phosphorous-silicon glass (PSG)-doped resulting in a final thickness of 1.5-2.5 pm. Low defect density, good etch rate control, uniformity and stress control have been accomplished for updoped oxide with a Novellus Concept One tool. 

A Hard Sphere Monte Carlo (HSMC) simulation is run for P atoms at densities appropriate to the doped and undoped glasses, with the constraint that each P atom is two-fold coordinated. This creates a PP PP chain structure that is 99% perfect to produce a perfect... 

Moore et al. (1991) used MD to probe the structure of CdF2-LiF-AlF3-PbF2 (CLAP) glasses and the effect of oxide addition to these systems. They found that the average coordination numbers for Cd, Li, Al, and Pb are 7.8, 5.5, 6.2, and 9.6, respectively, in the undoped glass. The oxide ions are found to be predominantly located near Al and Pb in the doped glass. They also found that each oxide ion replaces a fluoride ion in the Al and Cd coordination spheres but substitutes for two fluoride ions when coordinated to Pb. 

Lagerlof KPD, Mitchell TE, Heuer AH (1989) Lattice diffusion kinetics in undoped and impurity-doped sapphire (a-Al203) A dislocation loop annealing stndy. J Am Ceram Soc 72 2159-2179 Lamkin, MA, Riley, FL, Fordham RJ (1992) Oxygen mobility in silicon dioxide and silicate glasses A review. J Eur Ceram Soc 10 347-367... 

---