Undoping

Shanthi E, Dutta V, Baneqee A and Chopra K L 1980 Electrical and optical properties of undoped and antimony-doped tin oxide films J. Appi. Rhys. 51 6243-51... 

In a defect-free, undoped, semiconductor, tliere are no energy states witliin tire gap. At 7"= 0 K, all of tire VB states are occupied by electrons and all of the CB states are empty, resulting in zero conductivity. The tliennal excitation of electrons across tire gap becomes possible at T > 0 and a net electron concentration in tire CB is established. The electrons excited into tire CB leave empty states in tire VB. These holes behave like positively charged electrons. Botli tire electrons in the CB and holes in tire VB participate in tire electrical conductivity. 

A common example of the Peieds distortion is the linear polyene, polyacetylene. A simple molecular orbital approach would predict S hybddization at each carbon and metallic behavior as a result of a half-filled delocalized TT-orbital along the chain. Uniform bond lengths would be expected (as in benzene) as a result of the delocalization. However, a Peieds distortion leads to alternating single and double bonds (Fig. 3) and the opening up of a band gap. As a result, undoped polyacetylene is a semiconductor. 

Conductivities of polymers of technological interest such as polypyrrole and polythiophene are typically 1000 cm in the doped state, and the conductivity can be tuned by reversibly doping and undoping the polymer. Derivatives of these and other polymers have achieved even higher conductivities. 

Fig. 1. Band-edge energy diagram where the energy of electrons is higher in the conduction band than in the valence band (a) an undoped semiconductor having a thermally excited carrier (b) n-ty e doped semiconductor having shallow donors and (c) a -type doped semiconductor having shallow acceptors.

In an undoped, intrinsic semiconductor the equiHbrium concentrations of electrons, and holes,/), are described by a lever rule derived from the law of mass action (eq. 3) ... 

Table 3 summarizes some of the present state-of-the-art parameters obtained for undoped and doped i -SiH(F) material thus produced. The device-quahty material exhibits semiconductivity because In G vs 10 /Texhibits a straight line with a conductivity activation energy of eV, which is... 

Fig. 4. Effect of dopant additions on the resistivity versus temperature behavior of BaTiO PTCR ceramics. A, undoped B, doped with 0.134 mol % Cr ...

Electrogenerated conducting polymer films incorporate ions from the electrolyte medium for charge compensation (182). Electrochemical cycling in an electrolyte solution results in sequential doping and undoping of the polymer film. In the case of a -doped polymer, oxidation of the film results in the... 

Fig. 2. Structures for the solid (a) fee Cco, (b) fee MCco, (c) fee M2C60 (d) fee MsCeo, (e) hypothetical bee Ceo, (0 bet M4C60, and two structures for MeCeo (g) bee MeCeo for (M= K, Rb, Cs), and (h) fee MeCeo which is appropriate for M = Na, using the notation of Ref [42]. The notation fee, bee, and bet refer, respectively, to face centered cubic, body centered cubic, and body centered tetragonal structures. The large spheres denote Ceo molecules and the small spheres denote alkali metal ions. For fee M3C60, which has four Ceo molecules per cubic unit cell, the M atoms can either be on octahedral or tetrahedral symmetry sites. Undoped solid Ceo also exhibits the fee crystal structure, but in this case all tetrahedral and octahedral sites are unoccupied. For (g) bcc MeCeo all the M atoms are on distorted tetrahedral sites. For (f) bet M4Ceo, the dopant is also found on distorted tetrahedral sites. For (c) pertaining to small alkali metal ions such as Na, only the tetrahedral sites are occupied. For (h) we see that four Na ions can occupy an octahedral site of this fee lattice.

Chemical erosion can be suppressed by doping with substitutional elements such as boron. This is demonstrated in Fig. 14 [47] which shows data for undoped pyrolitic graphite and several grades of boron doped graphite. The mechanism responsible for this suppression may include the reduced chemical activity of the boronized material, as demonstrated by the increased oxidation resistance of B doped carbons [48] or the suppressed diffusion caused by the interstitial trapping at boron sites. 

Figure 9.11. Microstructures of porous sintered alumina prepared undoped (right) and when doped with magnesia (left). Optical micrographs, originally 250x (after Burke 1996).

Polymer LEDs are similar to thin film organic molecular LEDs first reported in 1987 17). Organic molecular LEDs utilize thin films of small organic molecules rather than polymer films as the light-emitting layer. The films of small organic molecules are undoped and have electronic properties comparable to the polymer films used in polymer LEDs. In general, the device physics of polymer LEDs is... 

Figure 11-7. Calculated and measured built-in potential as a function or inctul work function difference for melal/MEH-PPV/Ca structures. The calculated built-in potentials for the undoped MEH-PPV structures arc in good agreement with the measured built-in potentials.

Polyfarylene vinylene)s form an important class of conducting polymers. Two representative examples of this class of materials will be discussed in some detail here. There are poly(l,4-phenylene vinylcne) (PPV) 1, poly(l,4-thienylene viny-lenc) (PTV) 2 and their derivatives. The polymers are conceptually similar PTV may be considered as a heterocyclic analog of PPV, but has a considerably lowci band gap and exhibits higher conductivities in both its doped and undoped stales. The semiconducting properties of PPV have been shown to be useful in the manufacture of electroluminescent devices, whereas the potential utility of PTV has yet to be fully exploited. This account will provide a review of synthetic approaches to arylene vinylene derivatives and will give details an how the structure of the materials relate to their performance in real devices. 

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