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Gallium elements

There are five 3d orbitals available, all more or less of the same energy. Putting a pair of electrons in each of these five orbitals means that a total of ten electrons can be accommodated before we need to go to a higher energy level. Not only scandium but the nine following elements can be built up by adding electrons into 3d orbitals. Not until we get to gallium (element number 31) do we go up to another set of orbitals. [Pg.390]

C21-0043. From Its position in the periodic table, predict the properties of gallium (Element 31). [Pg.1548]

EINECS 231-163-8 Gallium Gallium, elemental HSDB 6956 UN2803. Compounds used as semiconductors. Metallic element Metal mp = 29.78° bp = 2400°. Atomergic Chemetals Cerac Eagle-Picher International Gallium Rhdne-Poulenc Sigma-Aldrich Fine Chem. [Pg.302]

Besides stmctural variety, chemical diversity has also increased. Pure silicon fonns of zeolite ZSM-5 and ZSM-11, designated silicalite-l [19] and silicahte-2 [20], have been synthesised. A number of other pure silicon analogues of zeolites, called porosils, are known [21]. Various chemical elements other than silicon or aluminium have been incoriDorated into zeolite lattice stmctures [22, 23]. Most important among those from an applications point of view are the incoriDoration of titanium, cobalt, and iron for oxidation catalysts, boron for acid strength variation, and gallium for dehydrogenation/aromatization reactions. In some cases it remains questionable, however, whether incoriDoration into the zeolite lattice stmcture has really occurred. [Pg.2782]

Amorphous boron and the amphoteric elements, aluminium and gallium, are attacked by aqueous solutions of sodium hydroxide and... [Pg.143]

In the absence of oxygen, gallium and indium are unaffected by water. Thallium, the most metallic element in Group III, reacts slowly with hot water and readily with steam to produce thallium(I) oxide, TI2O. [Pg.144]

Only thallium of the Group III elements is affected by air at room temperature and thalliumflll) oxide is slowly formed. All the elements, however, burn in air when strongly heated and, with the exception of gallium, form the oxide M2O3 gallium forms a mixed oxide of composition GaO. In addition to oxide formation, boron and aluminium react at high temperature with the nitrogen in the air to form nitrides (BN and AIN). [Pg.144]

Gallium is often found as a trace element in diaspore, sphalerite, germanite, bauxite, and coal. Some flue dusts from burning coal have been shown to contain as much 1.5 percent gallium. [Pg.87]

Gallium [7440-55-3] atomic number 31, was discovered through a study of its spectral properties in 1875 by P. E. Lecoq de Boisbaudran and named from Gallia in honor of its discoverer s homeland. The first element to be discovered after the pubHcation of Mendeleev s Periodic Table, its discovery constituted a confirmation of the Table which was reinforced shordy after by the discoveries of scandium and germanium. [Pg.158]

Gallium compounds containing monovalent elements aie described in Reference 25. [Pg.162]

Two of the materials systems shown ia Figure 6 are of particular importance. These are the ternary compounds formed from the Group 13 (III) elements such as A1 and Ga ia combination with As (6) and quaternary compounds formed from Ga and In ia combination with As and P (16—18). The former, aluminum gallium arsenide, Al Ga As, grown on GaAs, is the best known of the general class of compounds The latter, gallium... [Pg.131]

When a sibcon crystal is doped with atoms of elements having a valence of less than four, eg, boron or gallium (valence = 3), only three of the four covalent bonds of the adjacent sibcon atoms are occupied. The vacancy at an unoccupied covalent bond constitutes a hole. Dopants that contribute holes, which in turn act like positive charge carriers, are acceptor dopants and the resulting crystal is -type (positive) sibcon (Fig. Id). [Pg.467]

Metallic Antimonides. Numerous binary compounds of antimony with metallic elements are known. The most important of these are indium antimonide [1312-41 -0] InSb, gallium antimonide [12064-03-8] GaSb, and aluminum antimonide [25152-52-7] AlSb, which find extensive use as semiconductors. The alkali metal antimonides, such as lithium antimonide [12057-30-6] and sodium antimonide [12058-86-5] do not consist of simple ions. Rather, there is appreciable covalent bonding between the alkali metal and the Sb as well as between pairs of Na atoms. These compounds are useful for the preparation of organoantimony compounds, such as trimethylstibine [594-10-5] (CH2)2Sb, by reaction with an organohalogen compound. [Pg.202]

The temperature at which this reaction is canied out is limited by considerations of the possibility of re-evaporation of As2 molecules and gallium atoms from the GaAs him. The semiconduchng compounds are less susceptible to this problem than the separate elements because of the thermodynamic stabilities of diese compounds, as discussed above. [Pg.71]

In the U ansport of gallium arsenide by chlorine, there is a competition between the monochloride and the nichloride for the uansport of gallium after arsenic has evaporated as the element or as a chloride. The probability... [Pg.93]

With gallium arsenide, additional elements, such as Si, S, and Cl, are of interest because of their doping character. Impurity levels on the order of lO cm are encountered with commercial substrates, which can be readily assessed using direct TXRF." VPD-TXRF is not possible in this case because of the lack of a native oxide layer on gallium arsenide. [Pg.354]

Atomic absorption spectroscopy of VPD solutions (VPD-AAS) and instrumental neutron activation analysis (INAA) offer similar detection limits for metallic impurities with silicon substrates. The main advantage of TXRF, compared to VPD-AAS, is its multielement capability AAS is a sequential technique that requires a specific lamp to detect each element. Furthermore, the problem of blank values is of little importance with TXRF because no handling of the analytical solution is involved. On the other hand, adequately sensitive detection of sodium is possible only by using VPD-AAS. INAA is basically a bulk analysis technique, while TXRF is sensitive only to the surface. In addition, TXRF is fast, with an typical analysis time of 1000 s turn-around times for INAA are on the order of weeks. Gallium arsenide surfaces can be analyzed neither by AAS nor by INAA. [Pg.355]

The hydrides of the later main-group elements present few problems of classification and are best discussed during the detailed treatment of the individual elements. Many of these hydrides are covalent, molecular species, though association via H bonding sometimes occurs, as already noted (p. 53). Catenation flourishes in Group 14 and the complexities of the boron hydrides merit special attention (p. 151). The hydrides of aluminium, gallium, zinc (and beryllium) tend to be more extensively associated via M-H-M bonds, but their characterization and detailed structural elucidation has proved extremely difficult. [Pg.67]

Gallium was predicted as eka-aluminium by D. 1. Mendeleev in 1870 and was discovered by P. E. Lecoq de Boisbaudran in 1875 by means of the spectroscope de Boi.sbaudran was, in fact, guided at the time by an independent theory of his own and had been searching for the missing element for some years. The first indications came with the observation of two new violet lines in the spark spectrum of a sample deposited on zinc, and within a month he had isolated 1 g of the metal starting from several hundred kilograms of crude zinc blende ore. The... [Pg.216]

The person whose name is most closely associated with the periodic table is Dmitri Mendeleev (1836-1907), a Russian chemist. In writing a textbook of general chemistry, Mendeleev devoted separate chapters to families of elements with similar properties, including the alkali metals, the alkaline earth metals, and the halogens. Reflecting on the properties of these and other elements, he proposed in 1869 a primitive version of today s periodic table. Mendeleev shrewdly left empty spaces in his table for new elements yet to be discovered. Indeed, he predicted detailed properties for three such elements (scandium, gallium, and germanium). By 1886 all of these elements had been discovered and found to have properties very similar to those he had predicted. [Pg.33]


See other pages where Gallium elements is mentioned: [Pg.938]    [Pg.938]    [Pg.185]    [Pg.185]    [Pg.31]    [Pg.140]    [Pg.158]    [Pg.359]    [Pg.94]    [Pg.158]    [Pg.158]    [Pg.164]    [Pg.79]    [Pg.191]    [Pg.210]    [Pg.391]    [Pg.474]    [Pg.198]    [Pg.16]    [Pg.67]    [Pg.563]    [Pg.704]    [Pg.108]    [Pg.27]    [Pg.223]    [Pg.298]    [Pg.30]    [Pg.33]    [Pg.272]   
See also in sourсe #XX -- [ Pg.78 ]

See also in sourсe #XX -- [ Pg.78 ]




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