EP device

Up to a fifth of all patients with implanted cardioverter-defibrillators have also demonstrated a pacemaker requirement (Pinski and Ttohman, 2(XX)). The dual requirement for pacemakers and ICDs has led to the development of units combining the two technologies on an advanced level, complete with dual chamber activity (Morris et al., 1999 Pinski and Ttohman, 2000). The benefit of a combined EP device is the elimination of separate costs for each system and potential harmful interactions between pacemakers and ICDs, including a reduction in the number of leads (Morris et al., 1999 Pinski and Ttohman, 2000). 

Figure 10-14. Inset Phololumincsccncc spectrum for low excitation pulse energy EP Main part (a) displays the spectrum for pump pulse energies well below the lasing threshold while (b) shows the spectrum obtained lor excitation with a pump energy close to the lasing threshold (c) presents the single mode-lasing spectrum emitted when the device is pumped well above threshold. The dashed lines indicate the zero line which is arbitrarily shifted in case of (b) and (c).

Incropera EP (1999) Liquid cooling of electronic devices by single-phase convection. Wiley, New York... 

Since the fitting process is an iterative one, an initial guess for the parameters must be obtained. This is often the most troublesome and/or inconvenient aspect of any optmization procedure. We have developed an interactive front-end for our fitting routine that is both fairly convenient and effective in this context. All initial parameters are generated from responses to prompts. First the data is displayed (in our case, for device independence, on a conventional line printer daisy-chained to the CRT terminal). From this display, esitmates of E j and Ep at a given... 

Figure 7.8. The net carrier concentration versus depth for the devices measured by C-V (DLTS measurements).The levels are designated for AP = autoplated (electroless deposition) EP = electroplated (electrodeposition) and PVD = physical vapor deposition. [Reproduced with permission from Ref. 95. Copyright 2001 Elsevier.]...

The scanning tunneling microscope uses an atomically sharp probe tip to map contours of the local density of electronic states on the surface. This is accomplished by monitoring quantum transmission of electrons between the tip and substrate while piezoelectric devices raster the tip relative to the substrate, as shown schematically in Fig. 1 [38]. The remarkable vertical resolution of the device arises from the exponential dependence of the electron tunneling process on the tip-substrate separation, d. In the simplest approximation, the tunneling current, 1, can be simply written in terms of the local density of states (LDOS), ps(z,E), at the Fermi level (E = Ep) of the sample, where V is the bias voltage between the tip and substrate... 

For lighdy doped n-type semiconductors at normal operating temperatures there is complete donor dissociation (donor saturation). Nd+ Nd> corresponding to Ep well below E In the presence of acceptors, n = Nd+ — Na Nd — Na. This frequendy occurs because semiconductor devices are customarily made by the diffusion or implantation of excess donors into a j -type substrate or vice versa. 

The read-out structure is further improved in EP-A-0061801 where each strip comprises a recess extending across a part of the width of the strip from the opposite side of the strip and towards a protruding connection. The protruding connection at one side of one strip extends into the recess at the opposite side of an adjacent strip. In this way a compact device geometry is achieved. 

In EP-A-015I311 (Honeywell Inc., USA, 14.08.85) a device having decreased time for readout is disclosed. 

A method to convert a region of a p-type HgCdTe body to n-type by the use of ion-etching is presented in EP-A-0062367. A high concentration of mercury is produced from an etched-away part of the body as to act as a dopant source. The method is used to form a detector device. 

An improved process for manufacturing the device disclosed in US-A-4197633, discussed above, is taught in EP-A-0050512. 

An improved process for manufacturing the device disclosed in US-A-4197633, shown above, is taught in EP-A-0050512 (Honeywell Inc., USA 28.04.82). Reference numbers below refer to the figure of US-A-4197633 above. 

Morishige S, Kaneda K, Terajima K, Takeda T, Sakamoto Y, Suzuki T. Polyimide adhesive compositions for ceramics and semiconductor devices. Eur Pat Appl EP 531867 A1 930317 10 pp... 

Schade H, Peter KProcess and device for separating solid and liquid matter from industrial wastewater by electroflotation. European Patent EP 686603 Al, 1995. 

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