Emitter injection efficiency

Fast particle bombardment of surfaces can effectively increase the critical nucleus size for formation of equilibrium phases (or any other nucleation process for that matter) and thus can enhance formation of metastable phases. HBT s utilize alloy base layers to improve emitter injection efficiency. Recombination in the base and base transit time may also be reduced. Consequently, base doping may be increased which is primarily responsible for faster device performances. 

Two types of wide gap emitter transistors—an nBP-pSi-nSi structure and an nBP nSi-pSi-nSi structure having a cascade junction nBP nSi-pSi emitter—were fabricated. The common emitter current gain p in the latter transistor is about 16 and the injection efficiency of the... 

Field desorption (FD) was introduced by Beckey in 1969 [76]. FD was the first soft ionization method that could generate intact ions from nonvolatile compounds, such as small peptides [77]. The principal difference between FD and FI is the sample injection. Rather than being in the gas phase as in FI, analytes in FD are placed onto the emitter and desorbed from its surface. Application of the analyte onto the emitter can be performed by just dipping the activated emitter in a solution. The emitter is then introduced into the ion source of the spectrometer. The positioning of the emitter is cmcial for a successful experiment, and so is the temperature setting. In general, FI and FD are now replaced by more efficient ionization methods, such as MALDI and ESI. For a description of FD (and FI), see Reference 78. 

Electro-optical modulators are other examples whose efficiency is enhanced in the presence of ion-radicals. These devices are based on the sandwich-type electrode structures containing organic layers as the electron/hole-injecting layers at the interface between the electrode and the emitter layer. The presence of ion-radicals lowers the barrier height for the electron or hole injection. Anion-radicals (e.g., anion-radicals from 4,7-diphenyl-l,10-phenanthroline—Kido and Matsumoto 1998 from tetra (arylethynyl) cyclooctatetraenes—Lu et al. 2000 from bis (1-octylamino) perylene-3,4 9,10-bis (dicarboximide)s— Ahrens et al. 2006) or cation-radicals (e.g., cation-radicals from a-sexithienyl—Kurata et al. 1998 l,l-diphenyl-2-[phenyl-4-A/,A- /i(4 -methylphenyl)] ethylene— Umeda et al. 1990, 2000), all of them are electron or hole carriers. 

A high gain transistor requires a nearly equal to 1. In the absence of collector junction breakdown, a is the product of the base transport factor and emitter efficiency. The base transport factor, aT, is the fraction of the minority current (electrons for an n-p—n transistor) that reaches the collector. ocT 1 — W2 /2L, where W is the base width, is the distance between emitter and collector junctions and Lg is the minority carrier diffusion length in the base. High gain transistors require a thin base as well as a long minority carrier lifetime for a large Lg. Because aT is >0.995 in modem transistors, there is little room for improvement. The emitter efficiency, the fraction of emitter current due to minority carriers injected into the base instead of the emitter,... 

Bilayered polysilane LEDs have been obtained by inserting a SiOx thin layer between the cathode and a Wurtz synthesized PMPS emitter film.94 The SiOx layers were prepared by 02 plasma treatment of the PMPS film surfaces. It was found that the external quantum efficiency was significantly enhanced by this treatment. This enhancement has been attributed to an increased electron injection via tunneling, resulting in a reduced hole current caused by the blocking effect of the thin SiOx layer. The weak visible emission observed from single-layer polysilane LEDs is almost completely eliminated. It was concluded that the visible emission is caused by the erosion of the PMPS surfaces due to the collision with hot metal particles during the vacuum deposition of the cathode, and this erosion process is avoided by the SiOx layer. 

The operation of the SPICE design is closely analogous to that of a conventional bipolar transistor comprising distinct emitter, base, and collector stages but with some differences that are forced by materials considerations. The central base layer is a doped semiconductor and in it is established a non-equilibrium minority carrier population by injection from the emitter. Additionally these injected carriers are partly spin polarized and when they are harvested by the spin-dependent collector, the collection efficiency is dependent on the relative orientations of the emitter and collector orientations. The feasibility of these devices depend on several issues,... 

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