Electronic structure thin films

Electronic and optical properties of structured thin films and heterojunctions are treated in Section 6.4. Since non-optimal electronic properties are to be accommodated in the new cell design, the transport properties to be discussed will naturally be those of defect-rich materials. 

EXEEES Extended Electron Energy Eoss Elne Structure Thin films Electrons (100-400 keV) Electrons energies 0-30 eV above edge <200 nm 1-100nm Density of states of valence electrons (above Eermi level) 27,32... 

The focus of this chapter is therefore two-fold. First, the defining characteristics of electronic ceramics used for various applications are discussed and related to the underlying physical, chemical, and structural features of the material. Second, this chapter selectively describes the use of various analytical techniques for characterizing the properties of electronic ceramics that make them suitable for a given application. Since a growing area of research is the development of ceramic thin film devices, particular emphasis is placed on the applicability of various characterization techniques for analysis of electronic ceramic thin films. 

Applications for external (or regular) reflectance include surface measurements for metals or semiconductors. The technique is used to measure the dielectric function of solids, for characterization of thin films, and to relate the reflectivity of a material surface to its electronic and/or surface structure. Thin film thickness (t, in units of wavelength) is measured using this technique combined with the mathematical relationship ... 

Compared to SEM, where reflecting electrons are utilized to examine a bulk material surface, TEM does not discern any topographic information because it examines thin films with transmitted electrons. The thin-film sample preparation is more complicated, and the TEM operation requires more training as well. The interpretation of a TEM image requires a good understanding of electron microscopy and the structure of the material. 

Transmission electron microscopy (TEM) can resolve features down to about 1 nm and allows the use of electron diffraction to characterize the structure. Since electrons must pass through the sample however, the technique is limited to thin films. One cryoelectron microscopic study of fatty-acid Langmuir films on vitrified water [13] showed faceted crystals. The application of TEM to Langmuir-Blodgett films is discussed in Chapter XV. 

For bulk structural detemiination (see chapter B 1.9). the main teclmique used has been x-ray diffraction (XRD). Several other teclmiques are also available for more specialized applications, including electron diffraction (ED) for thin film structures and gas-phase molecules neutron diffraction (ND) and nuclear magnetic resonance (NMR) for magnetic studies (see chapter B1.12 and chapter B1.13) x-ray absorption fine structure (XAFS) for local structures in small or unstable samples and other spectroscopies to examine local structures in molecules. Electron microscopy also plays an important role, primarily tlirough unaging (see chapter B1.17). 

Vop D, Kruger P, Mazur A and Pollmann J 1999 Atomic and electronic structure of WSe from ah initio theory bulk crystal and thin film systems Phys. Rev. B 60 14 311... 

Sputtered Neutral Mass Spectrometry (SNMS) is the mass spectrometric analysis of sputtered atoms ejected from a solid surface by energetic ion bombardment. The sputtered atoms are ionized for mass spectrometric analysis by a mechanism separate from the sputtering atomization. As such, SNMS is complementary to Secondary Ion Mass Spectrometry (SIMS), which is the mass spectrometric analysis of sputtered ions, as distinct from sputtered atoms. The forte of SNMS analysis, compared to SIMS, is the accurate measurement of concentration depth profiles through chemically complex thin-film structures, including interfaces, with excellent depth resolution and to trace concentration levels. Genetically both SALI and GDMS are specific examples of SNMS. In this article we concentrate on post ionization only by electron impact. 

This chapter contains articles on six techniques that provide structural information on surfaces, interfeces, and thin films. They use X rays (X-ray diffraction, XRD, and Extended X-ray Absorption Fine-Structure, EXAFS), electrons (Low-Energy Electron Diffraction, LEED, and Reflection High-Energy Electron Diffraction, RHEED), or X rays in and electrons out (Surfece Extended X-ray Absorption Fine Structure, SEXAFS, and X-ray Photoelectron Diffraction, XPD). In their usual form, XRD and EXAFS are bulk methods, since X rays probe many microns deep, whereas the other techniques are surfece sensitive. There are, however, ways to make XRD and EXAFS much more surfece sensitive. For EXAFS this converts the technique into SEXAFS, which can have submonolayer sensitivity. 

Alternatives to XRD include transmission electron microscopy (TEM) and diffraction, Low-Energy and Reflection High-Energy Electron Diffraction (LEED and RHEED), extended X-ray Absorption Fine Structure (EXAFS), and neutron diffraction. LEED and RHEED are limited to surfaces and do not probe the bulk of thin films. The elemental sensitivity in neutron diffraction is quite different from XRD, but neutron sources are much weaker than X-ray sources. Neutrons are, however, sensitive to magnetic moments. If adequately large specimens are available, neutron diffraction is a good alternative for low-Z materials and for materials where the magnetic structure is of interest. 

Here Pyj is the structure factor for the (hkl) diffiaction peak and is related to the atomic arrangements in the material. Specifically, Fjjj is the Fourier transform of the positions of the atoms in one unit cell. Each atom is weighted by its form factor, which is equal to its atomic number Z for small 26, but which decreases as 2d increases. Thus, XRD is more sensitive to high-Z materials, and for low-Z materials, neutron or electron diffraction may be more suitable. The faaor e (called the Debye-Waller factor) accounts for the reduction in intensity due to the disorder in the crystal, and the diffracting volume V depends on p and on the film thickness. For epitaxial thin films and films with preferred orientations, the integrated intensity depends on the orientation of the specimen. 

RAIRS spectra contain absorption band structures related to electronic transitions and vibrations of the bulk, the surface, or adsorbed molecules. In reflectance spectroscopy the ahsorhance is usually determined hy calculating -log(Rs/Ro), where Rs represents the reflectance from the adsorhate-covered substrate and Rq is the reflectance from the bare substrate. For thin films with strong dipole oscillators, the Berre-man effect, which can lead to an additional feature in the reflectance spectrum, must also be considered (Sect. 4.9 Ellipsometry). The frequencies, intensities, full widths at half maximum, and band line-shapes in the absorption spectrum yield information about adsorption states, chemical environment, ordering effects, and vibrational coupling. 

Reflectometry is a useful probe with which to investigate the structure of multilayers both in self-supporting films and adsorbed on surfaces [51]. Specular X-ray reflectivity probes the electron density contrast perpendicular to the film. The X-rays irradiate the substrate at a small angle (<5 °) to the plane of the sample, are reflected, and are detected at an equal angle. If a thin film is present on the surface... 

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