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Electronic circuit elements

Variable capacitors are available with values up to a few hundred picofarads. These are commonly formed from sets of interleaved plates, one fixed and the other attached to a shaft. Rotation changes the effective area and thereby the capacitance. Arrangements with sliding cylinders are also used and dielectrics include air, mica, and ceramic. Varacter diodes, junction diodes in which the capacitance is determined by the reverse bias voltage, are now finding increasing use in circuits, because their capacitance can be actively controlled by other electronic circuit elements. [Pg.541]

It is increasingly important to understand nature on a scale in between the quantum and classical worlds. Technological methods have moved into this transitional realm with dramatic results. Scanning tunneling microscopes can image individual atoms and reveal the atomic character of surfaces of solids. Individual atoms can be moved about and materials tailored for specific purposes. Electronic circuit elements have been reduced to dimensions of molecules. As scientists come to understand how the quantum domain gives way to the classical domain, these technologies will... [Pg.250]

Phosphorus-Containing Printed Wiring Boards. This same phosphinate intermediate, dihydrooxaphosphaphenanthrene oxide (DOPO), is also the subject of substantial efforts in the Far East and Europe to react it into epoxy printed wiring boards and encapsulated electronic circuit elements as a... [Pg.3213]

Next, the modeling of power-electronics circuit elements is described, and thermal calculations using the EMTP are explained. [Pg.334]

The pursuit of further miniaturization of electronic circuits has made submicrometer resolution Hthography a cmcial element in future computer engineering. LB films have long been considered potential candidates for resist appHcations, because conventional spin-coated photoresist materials have large pinhole densities and variations of thickness. In contrast, LB films are two-dimensional, layered, crystalline soHds that provide high control of film thickness and are impermeable to plasma down to a thickness of 40 nm (46). The electron beam polymerization of CO-tricosenoic acid monolayers has been mentioned. Another monomeric amphiphile used in an attempt to develop electron-beam-resist materials is a-octadecylacryUc acid (8). [Pg.534]

Fig. 17. Schematic of a z-axis conductive PSA bonding elements in an electronic circuit board. Fig. 17. Schematic of a z-axis conductive PSA bonding elements in an electronic circuit board.
Silicon s atomic structure makes it an extremely important semiconductor. Highly purified silicon, doped with such elements as boron, phosphorus, and arsenic, is the basic material used in computer chips, transistors, sUicon diodes, and various other electronic circuits and electrical-current switching devices. Silicon of lesser purity is used in metallurgy as a reducing agent and as an alloying element in steel, brass, and bronze. [Pg.310]

A more complicated model situation is demanded if one thinks of the equivalent circuit for an electrode covered with an oxide film. One might think of A1 and the protective oxide film that grows upon it during anodic polarization. One has to allow for the resistance of the solution, as before. Then there is an equivalent circuit element to model the metal oxide/solution interface, a capacitance and interfacial resistance in parallel. The electrons that enter the oxide by passing across the interfacial region can be shown to go to certain surface states (Section 6.10.1.8) on the oxide surface, and they must be represented. Finally, on the way to the underlying metal, the electron... [Pg.419]

Molecular electronics currently is defined as the use of organic molecular materials to perform an active function in the processing of information and its transmission and storage. An alternative definition has been suggested, namely, the achievement of switching on a molecular scale. As observed by G.G. Roberts (University of Oxford), It is interesting to note that only a modest diminution in the size of electronic circuit components is required before the scale of individual molecules is reached in fact many existing ciicuit elements could alieady be accommodated within the aiea occupied by a leukemia virus. ... [Pg.1466]

Figure 1.4 is an illustration of a typical dynamic electrochemical experiment in which the reduced form of a substance (white circles) is initially present. Current or potential is applied to oxidize this substance. The oxidized substance (black circles) can then be reconverted to the starting material. The electrochemical cell can be represented as a circuit element as depicted in the upper left of the figure. The potential of the working electrode is monitored in relation to the reference electrode. The current passes between the auxiliary and working electrodes. How and why this is done is the subject of Chapters 2 to 7. The motion of molecules or ions to and from the electrode surface is critical. The electron transfer occurs at the working electrode and its surface properties are therefore crucial. While students new to chemistry are introduced to redox couples such as Fe(II)/Fe(III) and Ce(III)/Ce(IV), many redox active substances are far more complex and frequently exhibit instability. [Pg.8]

The origin of the pyroelectric effect, particularly in crystalline materials, is due to the relative motions of oppositely charged ions in the unit cell of the crystal as the temperature is varied. The phase transformation of the crystal from a ferroelectric state to a paraelectrlc state involves what is called a "soft phonon" mode (9 1). In effect, the excursions of the ions in the unit cell increase as the temperature of the material approaches the phase transition temperature or Curie temperature, T. The Curie temperature for the material used here, LiTaO, is 618 C (95). The properties of a large number of different pyroelectric materials is available through reference 87. For the types of studies envisaged here, it is preferable to use a pyroelectric material whose pyroelectric coefficient, p(T), is as weakly temperature dependent as possible. The reason for this is that if p(T) is independent of temperature, then the induced current in the associated electronic circuit will be independent of ambient temperature and will be a function only of the time rate of change of the pyroelectric element temperature. To see this, suppose p(T) is replaced by pQ. Then Equation U becomes... [Pg.22]

Circuit Board Printing Computer Inductors Electronic Power Elements Solar Cells Photovoltaic Modules... [Pg.420]


See other pages where Electronic circuit elements is mentioned: [Pg.822]    [Pg.349]    [Pg.112]    [Pg.83]    [Pg.471]    [Pg.220]    [Pg.338]    [Pg.15]    [Pg.112]    [Pg.531]    [Pg.926]    [Pg.11]    [Pg.822]    [Pg.349]    [Pg.112]    [Pg.83]    [Pg.471]    [Pg.220]    [Pg.338]    [Pg.15]    [Pg.112]    [Pg.531]    [Pg.926]    [Pg.11]    [Pg.23]    [Pg.513]    [Pg.121]    [Pg.765]    [Pg.228]    [Pg.797]    [Pg.76]    [Pg.146]    [Pg.190]    [Pg.358]    [Pg.360]    [Pg.361]    [Pg.4]    [Pg.1]    [Pg.662]    [Pg.513]    [Pg.215]    [Pg.4]    [Pg.39]    [Pg.115]    [Pg.781]    [Pg.1017]    [Pg.149]    [Pg.239]    [Pg.223]   
See also in sourсe #XX -- [ Pg.538 , Pg.539 , Pg.540 , Pg.541 ]




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