Electron projection lithography

In order to address the low throughput issues of electron-beam direct-write lithography, without multiple columns and the attendant complexity, electron 

The 1 1 photocathode projection scheme uses UV radiation to irradiate a Csl photocathode, which is masked hy a thin metal pattern. Photoelectrons are ejected from the cathode and accelerated to the wafer, which acts as the anode. A uniform magnetic field is used to focus the electrons at the wafer. Chromatic aberrations tend to limit resolution in these systems. Other problems that have been identified to hamper this technique include issues such as the uniformity of the electric and magnetic fields, substrate flatness requirements, and poor cathode life.  

The shadow mask proximity printing technique projects the shadow image of the transmission mask onto a resist-coated wafer by scanning a 1-mm-diameter 

Photocathodes for use in an electron image projector, J. Appl. Phys. 46, 661 (1975)  

Sugihara, C. Itoh, M. Tabata, and T. Schinozaki, An electron beam image projection system with automatic wafer handling, Microelectron. Eng. 3, 69 (1985) T.W. O Keefe, J. Vine, and R.M. Handy, An electron imaging system for the fabrication of integrated circuits, Solid 

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I. Anemiya, H. Yamashita, S. Nakatsuka, M. Tsukahara, and O. Nagerekawa, Fabrication of a continuous diamondlike carbon membrane mask for electron projection lithography, J. Vac. Sci. Technol. B 21(6), 3032 3036 (2003). 

Preliminary experiments with electron-beam writing and ion-beam projection lithography have demonstrated that the S-layer may also be patterned by these techniques in the sub-lOO-nm range (nnpnblished resnlts). The combination of ion-beam projection lithography and S-layers as resist might become important in the near fntnre, since ion beams allow the transfer of smaller featnres into S-layer lattices compared to optical lithography. 

New promising technologies for future electron-beam lithography applications based on pyroelectrically induced electron emission from LiNbOs ferroelectrics [22] were recently proposed [23], The developed system possessing micrometer scale resolution used 1 1 electron beam projection. The needed electron pattern was obtained by means of deposited micrometer-size Ti-spots on the polar face of LiNbOs. Another solution for the high resolution electron lithography may be found in nanodomain patterning of a ferroelectric template. 

Laser ablation microprobe mass spectroscopy Low energy electron beam projection lithography Line edge roughness Maleic anhydride Methacrylic acid... 

Scattering angular-limited projection electron beam lithography... 

Itoh, H. Tadokoro, Y. Sohda, Y. Nakayama, and N. Saitou, Cell projection colunm for high speed electron beam lithography system, J. Vac. Sci. Technol. BIO, 2799 (1992). 

W.G. Oldham, S.N. Nandgaonkar, A.R. Neureuther, and M. O Toole, A general simulator for VLSI lithography and etching processes Part 1. apphcation to projection lithography, IEEE Trans. Electron Dev. ED-26(4), 717 722 (1979). 

J.A. Liddle and S.D. Berger, High throughput projection electron beam lithography employing SCALPEL, Proc. SPIE 2014, 66 76 (1993) L.R. Harriot, SCALPEL Projection electron beam lithography, Proc. 1999 Particle Accelerator Conference, New York, pp. 595 599 (1999). 

L.R. Harriot, SCALPEL Projection electron beam lithography, Proc. 1999 Particle Accelerator Conference, New York, pp. 595 599 (1999). 

The principle of maskless ion projection lithography is illustrated in Fig. 15.10. A hroad ion beam is used to illuminate a programmable aperture plate with thousands of apertures of micrometer-scale dimensions, generating up to 4000 beams. In the vicinity of the apertures are tiny deflection plates, each of which can be individually controlled with the aid of integrated CMOS electronics. The slightly deflected beams are blocked at the stopping plate, and the nondeflected... 

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