Electron indirect

In the example above, the electron transfer was direct, that is, the electrons were exchanged directly from the zinc metal to the cupric ions. But such a direct electron transfer doesn t allow for any useful work to be done by the electrons. Therefore, in order to use these electrons, indirect electron transfer must be done. The two half-reactions are physically separated and connected by a wire. The electrons that are lost in the oxidation half-reaction are allowed to flow through the wire to get to the reduction half-reaction. While those electrons... 

With the exception of the scanning probe microscopies, most surface analysis teclmiques involve scattering of one type or another, as illustrated in figure A1.7.11. A particle is incident onto a surface, and its interaction with the surface either causes a change to the particles energy and/or trajectory, or the interaction induces the emission of a secondary particle(s). The particles that interact with the surface can be electrons, ions, photons or even heat. An analysis of the mass, energy and/or trajectory of the emitted particles, or the dependence of the emitted particle yield on a property of the incident particles, is used to infer infomiation about the surface. Although these probes are indirect, they do provide reliable infomiation about the surface composition and structure. 

Indirect spin u / 1-1Q3 Spin-spin interaction mediated via the bonding electrons through the contact interaction... 

Nonclassical ions, a term first used by John Roberts (an outstanding Caltech chemist and pioneer in the field), were defined by Paul Bartlett of Harvard as containing too few electrons to allow a pair for each bond i.e., they must contain delocalized (T-electrons. This is where the question stood in the early 1960s. The structure of the intermediate 2-norbornyl ion could only be suggested indirectly from rate (kinetic) data and observation of stereochemistry no direct observation or structural study was possible at the time. 

As described in the chapter on band structures, these calculations reproduce the electronic structure of inhnite solids. This is important for a number of types of studies, such as modeling compounds for use in solar cells, in which it is important to know whether the band gap is a direct or indirect gap. Band structure calculations are ideal for modeling an inhnite regular crystal, but not for modeling surface chemistry or defect sites. 

An ion beam causes secondary electrons to be ejected from a metal surface. These secondaries can be measured as an electric current directly through a Faraday cup or indirectly after amplification, as with an electron multiplier or a scintillation device. These ion collectors are located at a fixed point in a mass spectrometer, and all ions are focused on that point — hence the name, point ion collector. In all cases, the resultant flow of an electric current is used to drive some form of recorder or is passed to an information storage device (data system). 

Arrival of ions, which have a positive or negative charge, causes an electric current to flow either directly (Faraday cup) or indirectly (electron multiplier and scintillator detectors). 

Fig. 1. Schematic diagram of semiconductor materials showing band gaps where CB and VB represent the conduction band and valence band, respectively and 0 and 0, mobile charge. The height of the curve represents the probabiUty of finding an electron with a given momentum bound to an N-isoelectronic impurity, (a) Direct band gap the conduction band minimum, F, is located where the electrons have 2ero momentum, ie, k = 0. The couples B—B, D—A, B—D, and B—A represent the various routes for radiative recombination. See text, (b) Indirect band gap the conduction band minimum, X, is located...

Direct and Indirect Energy Gap. The radiative recombination rate is dramatically affected by the nature of the energy gap, E, of the semiconductor. The energy gap is defined as the difference in energy between the minimum of the conduction band and the maximum of the valence band in momentum, k, space. Eor almost all semiconductors, the maximum of the valence band occurs where holes have zero momentum, k = 0. Direct semiconductors possess a conduction band minimum at the same location, k = O T point, where electrons also have zero momentum as shown in Eigure la. Thus radiative transitions that occur in direct semiconductors satisfy the law of conservation of momentum. 

In many semiconductors employed for LEDs, and especially in mixed alloys, the direct and indirect minima ate separated by smaller energies than those of the purely direct and indirect semiconductors. As a result, finite electron concentrations exist within both minima. The total electron concentration, n, is given by equation 5 ... 

Semiconductors can be divided into two groups direct and indirect band gap materials. In direct semiconductors the minimum energy in the conduction band and the maximum in the valence band occur for the same value of the electron momentum. This is not the case in indirect materials. The difference has profound consequences for the transitions of electrons across the band gap in which light is emitted, the radiative transitions, of interest here. 

---