Indirect electron beam exposure

In this paper we present a comprehensive experimental and theoretical description of nanodomain reversal in fe bulk crystals an experimental method for domain switching using hvafm, results on nanodomain switching using hvafm and under indirect electron beam exposure, theory of fe domain breakdown and our last development of the fabrication of nanodomain gratings by the use of multiple tip arrays. We show that fdb is a new physical phenomenon observed in bulk fe crystals, and is the basis for the development of nanodomain technology in bulk fe crystals. This technology is required for future photonic, acoustic and microelectronic devices. 

Another factor that influences strongly the evolution of polarization reversal in fe bulk crystals is the limited minimization of the depolarization field by means of screening charges. In the case of the afm tip of R 50 nm the screening charge is limited both by the size of the tip and its non-ohmic contact with the sample surface. Such an effect is especially pronounced in the case of indirect electron beam exposure method described in this paper. The strong limitation of the screening phenomenon provides a necessary condition for the observed effect of fdb [13-15],... 

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