Semiconductors, electron-hole pairs

The optical multichannel photodiode array most used in Raman spectroscopy is the IPDA consisting of a one-dimensional array of amplified photodiodes. The mechanism behind the IPDA detection is that each photodiode converts photons to separated electron-hole pairs (semiconductor-amplification device). In some solid-state detectors (e.g.,... 

The first step is absorption of photons to form electron-hole pairs. Semiconductors have the band structure in which the conduction band is separated from the valence band by a band gap with a suitable width. When the energy of incident light is larger than that of a band gap, electrons and holes are generated in the conduction and valence bands, respectively. 

In n type semiconductors, electrons are tire majority carriers. Holes will also be present tlirough accidental incoriioration of acceptor impurities or, more importantly, tlirough tlie intentional creation of electron-hole pairs. Holes in n type and electrons in p type semiconductors are minority carriers. 

There are many ways of increasing tlie equilibrium carrier population of a semiconductor. Most often tliis is done by generating electron-hole pairs as, for instance, in tlie process of absorjition of a photon witli h E. Under reasonable levels of illumination and doping, tlie generation of electron-hole pairs affects primarily the minority carrier density. However, tlie excess population of minority carriers is not stable it gradually disappears tlirough a variety of recombination processes in which an electron in tlie CB fills a hole in a VB. The excess energy E is released as a photon or phonons. The foniier case corresponds to a radiative recombination process, tlie latter to a non-radiative one. The radiative processes only rarely involve direct recombination across tlie gap. Usually, tliis type of process is assisted by shallow defects (impurities). Non-radiative recombination involves a defect-related deep level at which a carrier is trapped first, and a second transition is needed to complete tlie process. 

Photovoltaic Devices. For many inorganic semiconductors, absorption of light can be used to create free electrons and holes. In an organic semiconducting soHd, however, absorption of a photon leads to the formation of a bound electron—hole pair. Separation of this pair in an electric field can... 

A schematic representation of a PR apparatus is shown in Figure 2. In PR a pump beam (laser or other light source) chopped at frequency 2 creates photo-injected electron-hole pairs that modulate the built-in electric field of the semiconductor. The photon energy of the pump beam must be larger than the lowest energy gap of the material. A typical pump beam for measurements at or below room temperature is a 5-mW He-Ne laser. (At elevated temperatures a more powerful pump must be employed.)... 

Fig. 4.7. A semiconductor detector operated as a pin diode with a reverse voltage or bias. An incident X-ray photon ultimately produces a series of electron-hole pairs. They are "swept out" by the bias field of-500 V- electrons in the direction ofthe n-layer holes in the direction ofthe p-layer. Thus, a small charge pulse is produced after [4.21],...

In low-dimensional systems, such as quantum-confined. semiconductors and conjugated polymers, the first step of optical absorption is the creation of bound electron-hole pairs, known as excitons [34). Charge photogcncration (CPG) occurs when excitons break into positive and negative carriers. This process is of essential importance both for the understanding of the fundamental physics of these materials and for applications in photovoltaic devices and photodctcctors. Since exciton dissociation can be affected by an external electric field, field-induced spectroscopy is a powerful tool for studying CPG. 

If for example Ti02, is used to capture sunlight in a photo-catalytic reaction then only about 10% of the available spectrum will be of use, since it requires 3.2 eV to create an electron-hole pair in Ti02. Both the photovoltaic and the photochemical methods are of potential interest, but at present they are too expensive. Also, the production of semiconductors used in photovoltaic cells consumes much energy. Nevertheless, the prospect remains attractive. If cells could be made with an efficiency of say 10 % then only 0.1 % of the earths surface would be required to supply our present energy consumption ... 

On the other hand, Switzer et al. proposed a different model for the oscillation. They attributed the oscillation to repetitive build-up and breakdown of a thin CU2O layer, which is a p-type semiconductor and acts as a thin rectifying (passivating) layer [24]. Disappearance of the oscillation under irradiated condition supports this model. Light will generate electron-hole pairs in the CU2O and lower the rectifying barrier at the semiconductor/solution interface. 

Upon illumination, photons having energy higher than the band gap (eg = ec — v) are absorbed in the semiconductor phase and the electron-hole-pairs (e //i+) are generated. This effect can be considered equivalent to the photoexcitation of a molecule (Fig. 5.57) if we formally identify the HOMO with the ec level and LUMO with the v level. The lifetime of excited e //i+ pairs (in the bulk semiconductor) is defined analogously as the lifetime of the excited molecule in terms of a pseudo-first-order relaxation (Eq. 5.10.2). 

Figure 4.1 Schematic representation of the processes involved after absorption by a semiconductor particle of a photon of wavelength ofenergy equal to or higherthan g (a) electron-hole pair formation (b) oxidation...

Direct splitting of water can be accomplished by illuminating two interconnected photoelectrodes, a photoanode, and a photocathode as shown in Figure 7.6. Here, Eg(n) and Eg(p) are, respectively, the bandgaps of the n- and p-type semiconductors and AEp(n) and AEF(p) are, respectively, the differences between the Fermi energies and the conduction band-minimum of the n-type semiconductor bulk and valence band-maximum of the p-type semiconductor bulk. lifb(p) and Utb(n) are, respectively, the flat-band potentials of the p- and n-type semiconductors with the electrolyte. In this case, the sum of the potentials of the electron-hole pairs generated in the two photoelectrodes can be approximated by the following expression ... 

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