Electrochemical semiconductor electrodes

After starting his own laboratory in 1982, the author built microwave measurement facilities with his collaborators and resumed research on microwave electrochemical phenomena. While the potential of combining photoelectrochemistry with microwave conductivity techniques became evident very soon,6,7 it was some time before microwave experiments could be performed at semiconductor electrodes under better-defined microwave technical conditions.8... 

At present, the microwave electrochemical technique is still in its infancy and only exploits a portion of the experimental research possibilities that are provided by microwave technology. Much experience still has to be gained with the improvement of experimental cells for microwave studies and in the adjustment of the parameters that determine the sensitivity and reliability of microwave measurements. Many research possibilities are still unexplored, especially in the field of transient PMC measurements at semiconductor electrodes and in the application of phase-sensitive microwave conductivity measurements, which may be successfully combined with electrochemical impedance measurements for a more detailed exploration of surface states and representative electrical circuits of semiconductor liquid junctions. 

The (photo)electrochemical behavior of p-InSe single-crystal vdW surface was studied in 0.5 M H2SO4 and 1.0 M NaOH solutions, in relation to the effect of surface steps on the crystal [183]. The pH-potential diagram was constructed, in order to examine the thermodynamic stability of the InSe crystals (Fig. 5.12). The mechanism of photoelectrochemical hydrogen evolution in 0.5 M H2SO4 and the effect of Pt modification were discussed. A several hundred mV anodic shift of the photocurrent onset potential was observed by depositing Pt on the semiconductor electrode. 

Laser D, Bard AJ (1976) Semiconductor Electrodes. IV. Electrochemical behavior of n- and p-type silicon electrodes in acetonitrile solutions. J Phys Chem 80 459 66... 

Diaz AF, Logan JA(1980)Electroactive polyanihne films. JElectroanalChem 111 111-114 Noufi R, Nozik AJ, White J, Warren LF (1982) Enhanced stability of photoelectrodes with electrogenerated polyanUine films. J Electrochem Soc 129 2261-2265 Noufi R, Tench D, Warren LE (1981) Protection of semiconductor photoanodes with photoelectrochemicaUy generated polypyrrole films. J Electrochem Soc 128 2596-2599 Jaeger CD, Fan FRF, Bard AJ (1980) Semiconductor electrodes. 26. Spectral sensitization of semiconductors with phthalocyanine. J Am Chem Soc 102 2592-2598 Gerischer H (1977) On the stability of semiconductor electrodes against photodecomposition. J Electroanal Chem 82 133-143... 

Noufi RN, Kohl PA, Bard AJ (1978) Semiconductor Electrodes XV. Photoelectrochemical ceUs with mixed polycrystaUine n-type CdS-CdSe electrodes. J Electrochem Soc 125 375-379... 

Kohl PA, Frank SN, Bard AJ (1977) Semiconductor electrodes XL behavior of n- and p-type single crystal semiconductors covered with thin n-Ti02 films. J Electrochem Soc 124 225-229... 

Ouyang J, Pan ERE, Bard AJ (1989) Semiconductor Electrodes, 62. Photoluminescence and electroluminescence from manganese-doped ZnS and CVD ZnS electrodes. J Electrochem Soc136 1033-1039... 

Fan FF, Bard AJ (1981) Semiconductor electrodes XXXVI. Characteristics of n-MoSe2, n-and p-WSc2 electrodes in aqueous solution. J Electrochem Soc 128 945-952... 

Abruna HD, Hope GA, Bard AJ (1982) Semiconductor electrodes XLV. Photoelectrochemistry of n- and p-Type MoTe2 in aqueous solutions. J Electrochem Soc 129 2224-2228... 

Wheeler BL, Leland JK, Bard AJ (1986) Semiconductor Electrodes LX. Photoelectrochemistry of p-ReS2 and p-ReSc2 in aqueous solutions. J Electrochem Soc 133 358-361... 

Pujishima A, Honda K (1972) Electrochemical photolysis of water at a semiconductor electrode. Nature 238 37-38... 

Electrochemical reactions at semiconductor electrodes have a number of special features relative to reactions at metal electrodes these arise from the electronic structure found in the bulk and at the surface of semiconductors. The electronic structure of metals is mainly a function only of their chemical nature. That of semiconductors is also a function of other factors acceptor- or donor-type impurities present in bulk, the character of surface states (which in turn is determined largely by surface pretreatment), the action of light, and so on. Therefore, the electronic structure of semiconductors having a particular chemical composition can vary widely. This is part of the explanation for the appreciable scatter of experimental data obtained by different workers. For reproducible results one must clearly define all factors that may influence the state of the semiconductor. 

Depending on the nature of the electrode and reaction, the carriers involved in an electrochemical reaction at a semiconductor electrode can be electrons from the conduction band (in the following to be called simply electrons), electrons from the valence band (holes), or both. The concentration of the minority carriers in semiconductors (electrons in p-type, and holes in n-type semiconductors) is always much... 

It follows from the Franck-Condon principle that in electrochemical redox reactions at metal electrodes, practically only the electrons residing at the highest occupied level of the metal s valence band are involved (i.e., the electrons at the Fermi level). At semiconductor electrodes, the electrons from the bottom of the condnc-tion band or holes from the top of the valence band are involved in the reactions. Under equilibrium conditions, the electrochemical potential of these carriers is eqnal to the electrochemical potential of the electrons in the solution. Hence, mntnal exchange of electrons (an exchange cnrrent) is realized between levels having the same energies. 

Because of the excess holes with an energy lower than the Fermi level that are present at the n-type semiconductor surface in contact with the solution, electron ttansitions from the solution to the semiconductor electrode are facilitated ( egress of holes from the electrode to the reacting species ), and anodic photocurrents arise. Such currents do not arise merely from an acceleration of reactions which, at the particular potential, will also occur in the dark. According to Eq. (29.6), the electrochemical potential, corresponds to a more positive value of electrode potential (E ) than that which actually exists (E). Hence, anodic reactions can occur at the electrode even with redox systems having an equilibrium potential more positive than E (between E and E ) (i.e., reactions that are prohibited in the dark). 

Electrochemical processes for photoelectrochemical energy conversion using semiconductor electrodes or microparticles. 

Basic properties of semiconductors and phenomena occurring at the semiconductor/electrolyte interface in the dark have already been discussed in Sections 2.4.1 and 4.5.1. The crucial effect after immersing the semiconductor electrode into an electrolyte solution is the equilibration of electrochemical potentials of electrons in both phases. In order to quantify the dark- and photoeffects at the semiconductor/electrolyte interface, a common reference level of electron energies in both phases has to be defined. 

The electrochemical potential of an electron in a solid defines the Fermi energy (cf. Eq. 3.1.9). The Fermi energy of a semiconductor electrode (e ) and the electrolyte energy level (credox) are generally different before contact of both phases (Fig. 5.60a). After immersing the semiconductor electrode into the electrolyte, an equilibrium is attained ... 

GaAs, CuInS2, CuInSe2- Semiconductor electrodes have received increasing attention as a consequence of their potential application in photoelectrochemical energy conversion devices. In order to achieve optimum efficiency, the knowledge of the surface composition plays a crucial role. Surface modifications may occur during operation of the photo electrode, or may be the result of a chemical or electrochemical treatment process prior to operation. 

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