EBIC

Unlike common industrial parks where factories are selected simply on the basis of their willingness to share the real estate, environmentally balanced industrial complexes (EBIC) are a selective collection of compatible industrial plants located together in a complex so as to minimize environmental impacts and industrial production costs [24,33]. These objectives are accomplished by utilizing the waste materials of one plant as the raw materials for another with a minimum of transportation, storage, and raw materials preparation costs. It is obvious that when an industry neither needs to treat its wastes, nor is required to import, store, and pretreat its raw materials, its overall production costs must be reduced significantly. Additionally, any material reuse costs in an EBIC will be difficult to identify and more easily absorbed into reasonable production costs. 

Such EBICs are especially appropriate for large, water-consuming, and waste-producing industries whose wastes are usually detrimental to the environment, if discharged, but they are also amenable to reuse by close association with satellite industrial plants using wastes from and... 

Figure 14 Example of environmentally balanced industrial complex (EBIC) centered about a steel mill plant (from Ref. 24).

Other indirect methods for measuring lifetimes often involve device structures such as p-n junctions. The electron-beam-induced current (EBIC) technique, for example, measures the increase injunction current as an impinging electron beam moves close to the junction, i.e., within a few minority-carrier diffusion lengths. If a diffusion constant can be estimated, say by knowledge of the minority-carrier mobility, then the minority-carrier lifetime can be calculated. However, SI GaAs does not form good junctions, so such methods are really not applicable. 

A powerful method for the characterization of the origin of losses on structured surfaces is provided by the EBIC (Electron Beam Induced Current) technique also known as charge collection microscopy (23. 24). 

A typical EBIC experiment is shown schematically in Fig. 10. A Schottky barrier is formed between a semiconductor and a metal. An electron beam impinges through the metal and creates electron hole pairs in the depletion region of the semiconductor. The charge carriers are separated by the electric field in the space charge region and are detected as collected current Ic in the external circuit. In the presence of recom-... 

Figure 10. Schematic of an EBIC experiment with a p-type semiconductor as photoactive part (Ic denotes the charge collection current)...

Figure 12. Collection current of an EBIC experiment obtained by scanning the electron beam across a stepped surface of a p-WSe2 sample (x-direction) beam voltage 20 kV, beam current 6.5 X 10 10 A. The arrows indicate the position of the steps.

Figure 75. Current filaments in p-Ge at various voltages, made visible by the EBIC technique (electron beam induced currents). 274 (Reprinted from K. M. Mayer, R. Gross, J. Parisi, J. Peinke, R. P. Huebener, Spatially Resolved Observation of Current Filament Dynamics in Semiconductors. , Solid State Commun., 63, 55-59. Copyright 1987 with permission from Elsevier.)...

Schottky contacts on ZnO were realized by the thermal evaporation of Ag, Au, Ni, or Pd, respectively. We used different surface preparation techniques prior to the deposition of the contact metal. For the single crystals a front-back contact configuration was used while a front-front configuration has to be used for thin films grown on insulating sapphire substrates. The homogeneity of the Schottky contacts depends on the surface preparation as revealed by electron beam induced current (EBIC) measurements (Fig. 6). 

EBIC Electron-hole pairs Structure, crystalline... 

Voltage contrast and Electron Beam Induced Current (EBIC), two electrical techniques usually used for circuit analysis, have proven useful for semiconductor materials characterization. 

Electron beam induced current (EBIC) has been used to... 

Figure 13 shows the EBIC experimental set-up for a p-n junction device and resultant signal intensity which is proportional to the field intensity in the depletion region. 

Figure 14b. EBIC photograph of same transistors 5,0OOX.

J.R. Beall and L. Hamiter, Jr., "EBIC-A Valuable Tool for Semiconductor Evaluation and Failure Analysis", IEEE, 15th Annual Proceedings Reliability Physics 1977, p. 61-69. 

Correlations with EBIC and XRT. Thermal features that arise either from mechanical defects or from metallic grains and grain boundaries are usually easy to recognize. However, thermal features arising from more subtle crystalline disruptions and variations, such as those described above are more difficult to identify. Before thermal-wave microscopy can be accepted as a routine, standard analytical technique, one needs to establish a direct correlation of some of these less obvious thermal-wave images with those obtained with other more widely accepted techniques. Below, we discuss two such correlations, one with electron beam Induced current (EBIC) and the other with x-ray topography (XRT). 

Thermal-wave microscopy has similarities in resolution and sampling depth. While the contrast mechanisms are very different, we would expect to find many of the same features appearing in both EBIC and thermal-wave images since both electrical conductivity and thermal conductivity are transport properties of the material, and thus will respond to changes in material properties in similar ways. 

Maas Al, Dearden M, Teasdale GM, et al. EBIC guidelines for management of severe head injury in adults. European Brain Injury Consortium. Acta Neurochir 1997 139 286-294. 

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