Electron beam induced current EBIC

Other indirect methods for measuring lifetimes often involve device structures such as p-n junctions. The electron-beam-induced current (EBIC) technique, for example, measures the increase injunction current as an impinging electron beam moves close to the junction, i.e., within a few minority-carrier diffusion lengths. If a diffusion constant can be estimated, say by knowledge of the minority-carrier mobility, then the minority-carrier lifetime can be calculated. However, SI GaAs does not form good junctions, so such methods are really not applicable. 

Schottky contacts on ZnO were realized by the thermal evaporation of Ag, Au, Ni, or Pd, respectively. We used different surface preparation techniques prior to the deposition of the contact metal. For the single crystals a front-back contact configuration was used while a front-front configuration has to be used for thin films grown on insulating sapphire substrates. The homogeneity of the Schottky contacts depends on the surface preparation as revealed by electron beam induced current (EBIC) measurements (Fig. 6). 

Voltage contrast and Electron Beam Induced Current (EBIC), two electrical techniques usually used for circuit analysis, have proven useful for semiconductor materials characterization. 

Electron beam induced current (EBIC) has been used to... 

Correlations with EBIC and XRT. Thermal features that arise either from mechanical defects or from metallic grains and grain boundaries are usually easy to recognize. However, thermal features arising from more subtle crystalline disruptions and variations, such as those described above are more difficult to identify. Before thermal-wave microscopy can be accepted as a routine, standard analytical technique, one needs to establish a direct correlation of some of these less obvious thermal-wave images with those obtained with other more widely accepted techniques. Below, we discuss two such correlations, one with electron beam Induced current (EBIC) and the other with x-ray topography (XRT). 

Figure 11 shows the DSD density of GaAs grown on Si substrate revealed by electron beam-induced current (EBIC) measurement for various TCA temperature. The DSD density decreases with increasing the TCA temperature gradually and is on the order of 10 cm at 1000 C. The crystal quality improvement by the relatively high TCA temperature... 

Fig. 7.12. Electron-beam-induced current (EBIC) images showing the plan view of (a) GeSi deposited on unpatterned Si substrates and (b) GeSi deposited on patterned Si substrates. The figures reveal changes in misfit dislocation densities in a Geo.19Sio.8i alloy on a (001) Si substrate. Adapted from Fitzgerald et al. (1991) and Fitzgerald (1995). Reproduced with permission from E.A. Fitzgerald, Massachusetts Institute of Technology.

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