Doping electrical properties

Diffusion. Another technique for modifying the electrical properties of siUcon and siUcon-based films involves introducing small amounts of elements having differing electrical compositions, dopants, into substrate layers. Diffusion is commonly used. There are three ways dopants can be diffused into a substrate film (/) the surface can be exposed to a chemical vapor of the dopant at high temperatures, or (2) a doped-oxide, or (J) an ion-implanted layer can be used. Ion implantation is increasingly becoming the method of choice as the miniaturization of ICs advances. However, diffusion is used in... 

Semiconductors (qv) are materials with resistivities between those of conductors and those of insulators (between 10 and 10 H-cm). The electrical properties of a semiconductor determine the hmctional performance of the device. Important electrical properties of semiconductors are resistivity and dielectric constant. The resistivity of a semiconductor can be varied by introducing small amounts of material impurities or dopants. Through proper material doping, electron movement can be precisely controlled, producing hmctions such as rectification, switching, detection, and modulation. 

AppHcations of polythiophenes being considered utilize either the electrical properties of the doped conducting state with either anionic or cationic... 

In this sub-subsection, the Er doping of amorphous silicon is discussed. The problem of limited solubility of Er in crystalline silicon has been circumvented. However, the electrical properties of pure a-Si are poor compared to c-Si. Therefore, hydrogenated amorphous silicon is much more interesting. Besides, the possibility of depositing a-Si H directly on substrates, i.e., optical materials, would make integration possible. Both low-pressure chemical vapor deposition (LPCVD) [664] and PECVD [665, 666] have been used to make the a-Si H into which Er is implanted. In both methods oxygen is intentionally added to the material, to enhance the luminescence. 

Preliminary measurements of electrical conductivity of the conjugated derivatives of PBTAB, PBTB and PTTB obtained by the above treatment with bromine vapor are poor semiconductors with a conductivity of the order 10 °S/cm which apparently is not due to doping. Subsequent electrochemical or chemical doping of these polymers lead to 4-6 orders of magnitude increase in conductivity. Ongoing studies of the electrical properties of these conjugated polymers with alternating aromatic/quinonoid units will be reported elsewhere. 

Doping is important for semiconductors in order to tune their optical and electrical properties for the potential applications in biotechnology and solar cells [65]. Ag-doped hexagonal CdS nanoparticles were successfully obtained by an ultrasound-assisted microwave synthesis method. Here, the doping of Ag in to CdS nanoparticles induced the evolution of crystal structure from cubic to hexagonal. Further support from photocatalytic experiment also clearly indicates the doping of Ag clusters into the CdS matrix. 

A turning point in the study of amorphous semiconductors was reached with the discovery that the addition of hydrogen to amorphous silicon could dramatically improve the material s optical and electrical properties. Unlike pure amorphous silicon, which is not photoconductive and cannot be readily doped, hydrogenated amorphous silicon (a-Si H) displays a photoconductive gain of over six orders of magnitude and its dark conductivity can be changed by over ten orders of magnitude by n-type or p-type... 

The diffusion of hydrogen in highly or lightly silicon doped GaAs induces a modification of the electrical properties of the material a reduction of the free electron concentration (Fig. 2) and a significant increase of the electron mobility up to values close to the mobility in nonhydrogenated materials with the same net carrier concentration (Jalil et al., 1986 Pan... 

Most of the literature focuses on the aspects of sinterability and microstructure, but limited data on the electrical properties is available. Tok [152] reported a conductivity of 18.3 x 10-3 Scm-1 at 600°C for Gd0 jCeo.gOj 95, and we measured a high conductivity of 22 x 10-3 scm-1 for Sm0 2Cc08O 9 at the same temperature. Their activation energies are relatively low—less than 0.7 eV. Although conductivity data reported for doped ceria prepared with carbonate precipitation is varied from different authors [153-155], the conductivity is generally high and the activation energy is usually low for ceria electrolytes fabricated with this method. 

R.B.H. Tahar, T. Ban, Y. Ohya, and Y. Takahashi, Tin doped indium oxide thin films electrical properties, J. Appl. Phys., 83 2631-2645, 1998. 

If the wafer is not fixed in the cell, a mechanical wafer support is advisable. The ohmic contact can be an integral part of such a sample fixture, as shown in Fig. 1.5 a. During formation of mesoporous silicon on highly doped substrates at low bias (0-1.5 V), it was found that such a contact can even be immersed into the electrolyte without a significant degradation of its electrical properties. It is remarkable that mesoporous silicon formation takes place under the contact, too, without significant degradation of the contact properties. 

ELECTRICAL PROPERTIES AND PHOTOCONDUCTIVITY. Electrical resistivity of CD CdS films is commonly studied. Values for this (dark) resistivity vary over many orders of magnitude from one fihn to another, usually for reasons that are not understood. Values as high as 10 O-cm and as low as 15 O-cm have been reported for undoped films (doped films have been reported with still lower resistivities). 

Doping can be divided into two parts native doping (e.g., S vacancies) and extrinsic doping by foreign elements. This section deals with the latter, not because it is more important but because there is httle in the literature to link native doping with the electrical properties of CD films. It will be enough to note that the few measurements of No (donor density) carried out tend to give values typically... 

Five aspects of the preparation of solids can be distinguished (i) preparation of a series of compounds in order to investigate a specific property, as exemplified by a series of perovskite oxides to examine their electrical properties or by a series of spinel ferrites to screen their magnetic properties (ii) preparation of unknown members of a structurally related class of solids to extend (or extrapolate) structure-property relations, as exemplified by the synthesis of layered chalcogenides and their intercalates or derivatives of TTF-TCNQ to study their superconductivity (iii) synthesis of a new class of compounds (e.g. sialons, (Si, Al)3(0, N)4, or doped polyacetylenes), with novel structural properties (iv) preparation of known solids of prescribed specifications (crystallinity, shape, purity, etc.) as in the case of crystals of Si, III-V compounds and... 

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