Diode visible

Diodes Visible and infrared Milliwatts to kilowatts Bar-code reading, CDs and DVDs, optical communications... 

Figure C2.16.2 shows tire gap-lattice constant plots for tire III-V nitrides. These compounds can have eitlier tire WTirtzite or zincblende stmctures, witli tire wurtzite polytype having tire most interesting device applications. The large gaps of tliese materials make tliem particularly useful in tire preparation of LEDs and diode lasers emitting in tire blue part of tire visible spectmm. Unlike tire smaller-gap III-V compounds illustrated in figure C2.16.3 single crystals of tire nitride binaries of AIN, GaN and InN can be prepared only in very small sizes, too small for epitaxial growtli of device stmctures. Substrate materials such as sapphire and SiC are used instead.

In one instrument, ions produced from an atmospheric-pressure ion source can be measured. If these are molecular ions, their relative molecular mass is obtained and often their elemental compositions. Fragment ions can be produced by suitable operation of an APCI inlet to obtain a full mass spectrum for each eluting substrate. The system can be used with the effluent from an LC column or with a solution from a static solution supply. When used with an LC column, any detectors generally used with the LC instrument itself can still be included, as with a UV/visible diode array detector sited in front of the mass spectrometer inlet. 

A diode, or semiconductor, laser operates in the near-infrared and into the visible region of the spectmm. Like the mby and Nd YAG lasers it is a solid state laser but the mechanism involved is quite different. 

The practical use of photochromic dyes as memory layers in erasable and rewritable data storage disks fails not only because of their physical limitations (lacking sensitivity, insufficient stabiHty, low number of cycles), but also because the diode lasers required for switching in the visible range (wavelength between 450 and 600 nm) and the uv-range (around 350 nm) are not available. 

For the visible and near-ultraviolet portions of the spectmm, tunable dye lasers have commonly been used as the light source, although they are being replaced in many appHcation by tunable soHd-state lasers, eg, titanium-doped sapphire. Optical parametric oscillators are also developing as useful spectroscopic sources. In the infrared, tunable laser semiconductor diodes have been employed. The tunable diode lasers which contain lead salts have been employed for remote monitoring of poUutant species. Needs for infrared spectroscopy provide an impetus for continued development of tunable infrared lasers (see Infrared technology and RAMAN spectroscopy). 

Light-emitting diodes are the most commercially important compound semiconductor devices in terms of both doUar and volume sales. The 1991 worldwide compound semiconductor device market totaled 2.8 biUion (39). Light-emitting diodes accounted for ca 1.9 biUion of this market. Visible and ir LEDs represented 37 and 30%, respectively. These markets are expected to grow as LEDs are increasingly employed in advanced appHcations. 

Commercial frequency doublers have rehed on inorganic materials. The commercial future of doublers depends on not only the improvement in second-order materials but also the development of diode lasers capable of operating in the visible frequency domain. 

A new cyanide dye for derivatizing thiols has been reported (65). This thiol label can be used with a visible diode laser and provide a detection limit of 8 X 10 M of the tested thiol. A highly sensitive laser-induced fluorescence detector for analysis of biogenic amines has been developed that employs a He—Cd laser (66). The amines are derivatized by naphthalenedicarboxaldehyde in the presence of cyanide ion to produce a cyanobenz[ isoindole which absorbs radiation at the output of He—Cd laser (441.6 nm). Optimization of the detection system yielded a detection limit of 2 x 10 M. 

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