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Diamond-type materials

In Eq. (34), the phonon polarization vectors are complex numbers. However, in diamond-type materials, such as Si and Ge, with two similar atoms within the basis (S = 1,2) a simplification can be made. If we choose the origin to lie midway between the two atoms, we find that 2 1 - - (a/8)(111). By employing time reversal invariance and inversion symmetry, we find that the polarization vectors e . and ef o are related in the... [Pg.479]

These two parameters are intimately related, since the form factors are the potential in the Fourier transformed Schroedinger equation, whose solution ultimately determines the wave functions. However, because of the structure factor, only a few select values of Vq are needed to determine the band structure.30 The values of q3 which are important for diamond type materials are 3, 8, and 11 [in units of (2ir/a)3, Larger values of q do not enter,... [Pg.481]

Germanium, just like Si, is a diamond type material and thus Eq. (37) can be used to calculate its EP and HP matrix elements. However, in Ge, the fundamental absorption results from F-L indirect processes assisted by LA and TO phonons. The LA transition has two intermediate conduction band states, V2, c... [Pg.483]

The discovery of superconductivity in heavily B-doped diamond, which produces p-type material, has provoked interest in using nB and 10B NMR for characterization. The nB static NMR at 4.2 K of heavily-doped diamond (2.8-8.7 x 1021 B/cm3) showed two unresolved peaks, the sharper of which was... [Pg.285]

The cubic form resembles diamond in its crystal structure and is almost as hard. The theoretical density is 3.48 g/mL. It is colodess and a good electrical insulator when pure traces of impurities add color and make it semiconducting, eg, a few ppm of Be make it blue and />-type whereas small amounts of S, Si, or CN favor yellow, -type crystals. It is possible to makep—n junctions by growing -type material on j -type seed crystals (12). If this is done carefully in an alkaline-earth nitride bath using a temperature difference technique, as with large diamond crystals (see Diamond, SYNTHETIC), the resulting diodes are several mm in size and emit blue light when forward-biased (13,14). [Pg.220]

On the other hand, in covalently bonded materials like carbon, silicon, and germanium, the formation of energy bands first involves the hybridization of the outer s- and p-orbitals to form four identical orbitals, ilnh, which form an angle of 109.5° with each other, that is, each C, Si, and Ge atom is tetrahedrally coordinated with the other C, Si, and Ge atom, respectively (Figure 1.16), resulting in a diamond-type structure. [Pg.28]

Preliminary results were recently reported [145] on the use of CdTe electrodeposition on diamond in the fabrication of a solid-state solar cell based on the boron-doped p-type diamond/n-type CdTe junction. In this cell, the wide-bandgap diamond is an optical window that generates photovoltage, whereas the narrow-bandgap CdTe generates photocurrent. We note that no appropriate p-type material for the fabrication of optical windows has existed so far therefore, one would use an n-type CdS window coupled with narrow-bandgap p-type CdTe. However, the pro-... [Pg.251]

This section presents a brief overview of a few other compounds that have not been described in previous sections. Because it can function as a nonmetal, silicon forms sihcides with several metals. These materials are often considered as alloys in which the metal and silicon atoms surround each other in a pattern that may lead to unusual stoichiometry. Examples of this type are Mo3Si and TiSi2. In some sihcides, the Si-Si distance is about 235 pm, a distance that is quite close to the value of 234 pm found in the diamond-type structure of elemental silicon. This indicates that the structure contains Si22-, and CaSi2 is a compound of this type. This compound is analogous to calcium carbide, CaC2 (actually an acetylide that contains C22- ions (see Chapter 10)). [Pg.271]

An attempt was made in this paper to sketch the behavior of elemental semiconductors (with the diamond-type structure) and of the IH-V compounds (with the zinc blende strut ture) in aqueous solutions. These covalent materials, in contrast to metals, exhibit properties which sharply reflect their crystalline structure. Although they have already contributed heavily to the understanding of surfaces in general, semiconductors with their extremely high purity, crystalline perfection, and well-defined surfaces are the most promising of materials for surface studies in liquid and in gaseous ambients. [Pg.403]

Very soon after the publication of the work of Rice and Freamo there appeared independently the suggestion that the stabilization of free radicals produced would be facilitated by the addition of some inert material which would dilute the substrate passing through the furnace. Many papers have been published on this technique, which is commonly known as the matrix isolation method (16, 33). However, the substances commonly used to form the matrix are molecular solids, so that the forces between the molecules are very weak and consequently radicals can be preserved only at temperatures near the boiling point of liquid nitrogen or even lower. If one could incorporate radicals into a diamond-type lattice, it might be possible to stabilize radicals sufficiently to keep them at room temperature. [Pg.5]

A new model for the clustering of charges in dry ionomers is presented. The basic idea is that, under the influence of electrostatic interactions, the multiplets of charges coalesce in clusters that have an internal structure compatible with the steric hindrances due to the polymeric material. The size of the cluster is shown to be independent of the concentration of charges. The tension of the chains within the matrix is discussed, and it is suggested that the clusters are arranged in small hypercrystallites with a local order of the diamond type. [Pg.103]

The purpose of the conditioning disk is to present the conditioning abrasive to the pad surface in a way that will deliver the necessary pad conditioning effects. Currently, all three of the required effects are treated as a single effect and handled through physical abrasion of the pad surface with a diamond-studded end-effecor (called a disk). The use of diamonds is necessary because of the extreme hardness of the abrasives used in the slurry. The presence of such abrasives on the pad would rapidly wear down materials softer than diamond. Several major suppliers of diamond conditioner disks are available, each one with its own combination of disk properties. A variety of physical disk formats is available, from solid disks to open patterns (such as ribbed or honeycomb shapes). Likewise a variety of ways to bind the diamonds to the disk exist, and they impact disk lifetimes and possibly wafer scratch damage. There is also a choice of diamond types, which affects the shape of the abrasive as it protrudes from the disk surface. [Pg.165]


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