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Devices four-terminal

Fig. 13. (a) The CMOS inverter circuit. The FET circuit symbols emphasize that MOSFETs are actually four-terminal devices in which the / -substrate is connected to for the PFET and the -substrate is connected to the ground for the NFET. Note the conventions on drain location for the PFET and NFET. (b) Corresponding cross-sectional view roughly to scale for a 2-p.m CMOS process, where Hrepresents siUcon, Si02, polysiUcon, and ... [Pg.353]

Figure 22. Shown is the schematic outline of the four-terminal device in Figure 13 with its reduced logic profiles and subsequent truth table outputs where the electrostatic potential is varied through inputs V1in and V2,in. The central methylene is depicted as an electrical barrier. Monitoring of the electrostatic potential output is observed at Vout, and FI... Figure 22. Shown is the schematic outline of the four-terminal device in Figure 13 with its reduced logic profiles and subsequent truth table outputs where the electrostatic potential is varied through inputs V1in and V2,in. The central methylene is depicted as an electrical barrier. Monitoring of the electrostatic potential output is observed at Vout, and FI...
Fig. 1. Scanning electron micrographs of representative device of the first type (a), and the second type (b). (a) is scaled to lpmxlpm. The leads used to measure the four-terminal resistance are marked. The current leads were used to send both the ac and dc current. Fig. 1. Scanning electron micrographs of representative device of the first type (a), and the second type (b). (a) is scaled to lpmxlpm. The leads used to measure the four-terminal resistance are marked. The current leads were used to send both the ac and dc current.
A metal-oxide-semiconductor field-effect transistor (MOSFET) is a four terminal device consisting of a gate, source, drain, and substrate. MOSFETs have an oxide layer (Si02) between the gate contact and the semiconductor. This insulating gate oxide layer prevents current flow from the semiconductor to the gate. [Pg.110]

Implantation of transvenous ICD systems employs techniques similar to those used for permanent pacemaker implantations, and is discussed in detail in a separate chapter in this book. Connecting ICD leads to the device is slightly different than connecting pacemaker leads to pacemaker generators. All ICD pulse generators have at least three ports for single chamber devices (four ports for dual chamber devices, and five ports for CRT-D). One LV port is for the pace/sense IS-1 terminal pin, and two are for the defibrillation coil (usually DF+ and DF-). The second DF port may be capped if a single coil... [Pg.363]

The list of operational elements described in this section is by no means a complete list of elements available. Devices such as Norton operational amplifiers, four-terminal floating nuUors, and operational floating conveyors are objects of study in the literature (Sedra and Roberts, 1990). [Pg.673]

The commercial appHcation of this concept (68) is portrayed ia Figure 8, which shows the adsorbent as a stationary bed. A Hquid circulating pump is provided to pump Hquid from the bottom outiet to the top inlet of the adsorbent chamber. A fluid-directing device known as a rotary valve (69,70) is provided. The rotary valve functions on the same principle as a multiport stopcock in directing each of several streams to different lines. At the right-hand face of the valve, the four streams to and from the process are continuously fed and withdrawn. At the left-hand face of the valve, a number of lines are coimected that terminate in distributors within the adsorbent bed. [Pg.296]

This nine (3 x 3) electrode dot device comprises a four-layer printed circuit board [100,101]. The first layer has a nine-phase electrode dot matrix. The entire electrode dot matrix consists of multiple 3x3 units. Each electrode has a hole in its center for connection to the electric circuits of the layers below. These layers were connected to external terminals. Sequential voltages were applied to the three-phase electrode columns and lines. [Pg.54]

Four-level lasers offer a distinct advantage over their three-level counterparts, (figure C2.15.5). The Nd YAG system is an excellent example of a four-level laser. Here the terminal level for the laser transition, 2), is unoccupied thus resulting in an inverted state as soon as any atom is pumped to state 3. Solid-state systems based on this pumping geometry dominate the marketplace for high-power laser devices. [Pg.2859]

In a three-electrode configuration, the potentiostat attains a specific potential difference between the WE and RE by varying the current between the WE and CE. When a two-electrode configuration is chosen, the potential difference between the WE and CE is maintained by varying the current flow between them. Source meters and potentiostats can come with two, three, four, or five electrode connections. Researchers should consult the manual for these devices to determine the proper terminal connections. [Pg.31]


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