Deuterium profile

A comparison of the deuterium profile measured by SIMS and the spreading resistance profile obtained on deuterated samples is shown in Fig. 6. The region over which there is a reduction in thermal donor concentration matches well with the depth of deuterium incorporation. There is an excess of deuterium over the amount needed to passivate all the oxygen-donor centers. This is frequently observed in hydrogenation experiments and indicates there is hydrogen present in several states. 

It was proposed (Johnson et al., 1987a) that this local lattice dilation is stabilized by the direct incorporation of hydrogen atoms through the coordinated formation of Si—H bonds. Results from SIMS (Section III. 1) and Raman spectroscopy (following) are consistent with this view. For example, the 60-min deuterium profile in Fig. 7(b) yields an integrated areal density of D in the near-surface peak of —1.7 x 1014 cm-2. The same deuteration conditions applied to this material produced 5 x 10n platelets per cm2 with an average diameter of 7 nm (Ponce et al., 1987). 

Fig. 8. SIMS profiles of 2H and nB in plasma-passivated B-implanted and annealed samples used in channeling studies of B—H complexes by Marwick et al. (1988). 1000 angstroms was etched off the surface of this sample to eliminate a layer containing a large excess of hydrogen. Nevertheless, some excess over the boron concentration remains at shallow depths. The histogram shows the deuterium profile used to analyze the data using calculated flux profiles.

Experimental measurements of DH in a-Si H using SIMS were first performed by Carlson and Magee (1978). A sample is grown that contains a thin layer in which a small amount (=1-3 at. %) of the bonded hydrogen is replaced with deuterium. When annealed at elevated temperatures, the deuterium diffuses into the top and bottom layers and the deuterium profile is measured using SIMS. The diffusion coefficient is obtained by subtracting the control profile from the annealed profile and fitting the concentration values to the expression, valid for diffusion from a semiinfinite source into a semi-infinite half-plane (Crank, 1956),... 

In neutron reflectivity, neutrons strike the surface of a specimen at small angles and the percentage of neutrons reflected at the corresponding angle are measured. The an jular dependence of the reflectivity is related to the variation in concentration of a labeled component as a function of distance from the surface. Typically the component of interest is labeled with deuterium to provide mass contrast against hydrogen. Use of polarized neutrons permits the determination of the variation in the magnetic moment as a function of depth. In all cases the optical transform of the concentration profiles is obtained experimentally. 

HDH/DHD interface. If the motion of the polymer was the same for each portion of the molecule, i.e., isotropic, the concentration of deuterium across the interface would remain constant. However, if the monomer motion is anisotropic, such as with reptation, where the chain ends lead the centers, a high amplitude ripple in the concentration profile, as described below will be displayed. For a reptating chain, lateral motion of the central segment of the chain is permitted up to depths approximating the tube diameter, after which the central segments must follow the chain ends in a snake-like fashion. 

The ripple experiment works as follows In Fig. 6, HDH and DHD are depicted by open and filled circles where the filled circles represent the deuterium labeled portions of the molecule and the open circles are the normal (protonated) portions of the chains. Initially, the average concentration vs. depth of the labeled portions of the molecules is 0.5, as seen along the normal to the interface, unless chain-end segregation exists at / = 0. If the chains reptate, the chain ends diffuse across the interface before the chain centers. This will lead to a ripple or an excess of deuterium on the HDH side and a depletion on the DHD side of the interface as indicated in the concentration profile shown at the right in Fig. 6. However, when the molecules have diffused distances comparable to Rg, the ripple will vanish and a constant concentration profile at 0.5 will again be found. 

Fig. 7. Concentration profiles of deuterium at the 110 K HDH + DHD interface at the indicated welding times. Left from 0 to 0.11 ti. Right from 0.11 to 1.97 td-...

Fig. 8. SIMS analysi.s of the ripple experiment. Exces.s deuterium depth profiles for the HDH + DHD bilayer annealed at 118°C (a) The ripple inereasing from 30 to 1080 min. (b) The ripple amplitude deereasing with inereasing time from 1080 to 2880 min [20,57].

In neutral and alkaline media, the rate of exchange at the 3 and 6 position of 4-aminopyridazine is independent of acidity but decreases markedly when the media become more acidic. This was interpreted in terms of a rate-determining removal of the 6-proton by deuteroxide ion to give the ylid (XXIV), which reacts with deuterium oxide in a fast step. A similar result for the 3 and 6 positions of py-ridazin-4-one suggests the same mechanism. For reaction at the 5 position, the rate-acidity profile indicated reaction on the free base as did that for the 5 position of pyridazin-3-one, though the appearance of a maximum in the rate at — HQ = 0.8 was anomalous and suggested incursion of a further mechanism. 

The energy profile for nuclear fusion of two deuterium nuclei. 

In order to illustrate the potential applications of rheo-NMR five examples have been chosen. The first example deals with wormlike micelles [22] in which NMR velocim-etry is used to profile anomalous deformational flow and deuterium NMR spectroscopy is used to determine micellar ordering in the flow. The second example concerns flow in a soft glassy material comprising a solution of intermittently jammed star polymers [23], a system in which flow fluctuations are apparent. The third... 

Recently, the mechanism of 6-nitro-BaP ring hydroxylation has been elucidated by using 3-deutero-6-nitro-BaP (144). When incubated with 3-methylcholanthrene-induced rat liver microsomes, this deuterated analogue yielded the same metabolite profile previously observed with 6-nitro-BaP. Spectroscopic analysis of 3-hydroxy-6-nitro-BaP and 6-nitro-BaP-3,9-hydroquinone indicated that 30% of the deuterium label had migrated to carbon 2, presumably via an NIH shift. Therefore, it appears that 6-nitro-BaP-2,3-oxide is a common intermediate for these two metabolites. 

Although the pyrolysis temperature can be raised up to 630 °C to reduce the nonspecific absorption (B profile), the determination of lead is a problem because the appearance temperature of lead corresponds to the maximum absorbance of the matrix signal (point X). Furthermore, the background absorbance of 1.5 A is at the limit of capability of the deuterium arc corrector. This high background, coupled with the poorer sensitivity of lead (compared to that of cadmium), limits the analytical capability of the direct determination of lead in seawater. 

Fig. 6. Spreading resistance and SIMS profile from deuterated CZ Si containing an initial uniform concentration of 6 x 1016 cm-3 thermal donors. The high, near-surface concentration is due probably to deuterium molecule formation (Pearton et al., 1986). 

In related experiments by Johnson (1985), atomic deuterium was used instead of Hx to neutralize boron in Si. Similar results on spreading resistance were obtained. Furthermore, the distribution profile of D was measured by secondary-ion mass spectrometry (SIMS), as shown in Fig. 4. The distribution profile of D reveals 1) that the penetration depth of D is in good agreement with the resistivity profile and 2) that the D concentration matches the B concentration over most of the compensated region. In another sample, the B was implanted at 200 keV with a dose of 1 x 1014 cm-2, the damage was removed by rapid thermal anneal at 1100°C for 10 sec., and then D was introduced at 150°C for 30 min. As shown in Fig. 5, it is remarkable that the D profile conforms to the B profile. 

Fig. 4. Depth profile of deuterium in boron-doped Si after deuteration at 150°C for 30 min. After Johnson (1985).

Fig. 7. Depth profiles of deuterium in n-type (P-doped) silicon after deuteration in a remote plasma system at 150°C (a) entire profile after a 120 min deuteration and (b) near-surface profiles after different durations of deuteration. Also shown is the uniform P concentration.

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