Defects stacking faults

Finally, two-dimensional defects can occur in crystals. There are two categories of planar defects stacking faults and grain boundaries. 

Many different etchants have been developed for various purposes as shown in Table 7.7. By using proper etchants and procedures, different types of crystal defects can be evaluated flow pattern defects, stacking faults, ... 

Extended defects range from well characterized dislocations to grain boundaries, interfaces, stacking faults, etch pits, D-defects, misfit dislocations (common in epitaxial growth), blisters induced by H or He implantation etc. Microscopic studies of such defects are very difficult, and crystal growers use years of experience and trial-and-error teclmiques to avoid or control them. Some extended defects can change in unpredictable ways upon heat treatments. Others become gettering centres for transition metals, a phenomenon which can be desirable or not, but is always difficult to control. Extended defects are sometimes cleverly used. For example, the smart-cut process relies on the controlled implantation of H followed by heat treatments to create blisters. This allows a thin layer of clean material to be lifted from a bulk wafer [261. 

The key here was the theory. The pioneers familiarity with both the kinematic and the dynamic theory of diffraction and with the real structure of real crystals (the subject-matter of Lai s review cited in Section 4.2.4) enabled them to work out, by degrees, how to get good contrast for dislocations of various kinds and, later, other defects such as stacking-faults. Several other physicists who have since become well known, such as A. Kelly and J. Menter, were also involved Hirsch goes to considerable pains in his 1986 paper to attribute credit to all those who played a major part. 

T. Sinno, R. A. Brown, W. Van Ammon, E. Dornberger. Point defect dynamics and the oxidation-induced stacking-fault ring in Czochralski-grown silicon crystals. J Electrochem Soc 145 302, 1998. 

Using the constructed potentials the y-surface for the (111) plane was calculated. (For more details see Girshick and Vitek 1995). T e lowest energy minimum on this surface corresponds to the ideal Llo structure. However, there are three different metastable stacking fault type defects on (111) the antiphase boundary (APB), the complex stacking fault (CSF) and the superlattice intrinsic stacking fault (SISF). The displacements... 

Similar to PbSe, the controlled growth of lead telluride, PbTe, on (111) InP was demonstrated from aqueous, acidic solutions of Pb(II) and Cd(II) nitrate salts and tellurite, at room temperature [13]. The poor epitaxy observed, due to the presence of polycrystalline material, was attributed to the existence of a large lattice mismatch between PbTe and InP (9%) compared to the PbSe/InP system (4.4%). The characterization techniques revealed the absence of planar defects in the PbTe structure, like stacking faults or microtwins, in contrast to II-VI chalcogenides like CdSe. This was related to electronic and structural anomalies. 

All of these point defects are intrinsic to the heterogeneous solid, and cirise due to the presence of both cation and anion sub-lattices. The factors responsible for their formation are entropy effects (stacking faults) and impurity effects. At the present time, the highest-purity materials available stiU contain about 0.1 part per billion of various impurities, yet are 99.9999999 % pure. Such a solid will still contain about IQi impurity atoms per mole. So it is safe to say that all solids contain impurity atoms, and that it is unlikely that we shall ever be able to obtain a solid which is completdy pure and does not contain defects. 

We have now introduced into our nomenclature a distinction between structure and anti-structure defects. What this means is that stacking faults can sometimes result in the formation of and Mx defects. These... 

From a structural point-of-view the bulk metallic state, that is, fee lattice (with varying densities of defects such as twins and stacking faults) is generally established in gold nanoparticles of about 10 nm diameter and upwards. However, such particles still display many unusual physical properties, primarily as the result of their small size. Shrinking the size of gold particles has an important effect it increases both the relative proportion of surface atoms and of atoms of even lower coordination number, such as edge atoms [49] and these atoms in turn are relatively mobile and reactive. 

There are two questions that needed to be answered here. (1) How can the ligand access the interiors of big prismatic particles to lead to the smaller particles and (2) Why do the ligands lead to smaller particles at all While it is difficult to conclusively find answers to both the questions, the first step in the digestive ripening procedure offers some leads. (1) The big prismatic particles obtained by the reverse micelle-based synthesis are loaded with defects such as twinning boundaries and stacking faults. 

Zeolite structures sometimes remain unsolved for a long time, because of either their complexity, the minute size of the crystallites or the presence of defects or impurities. One extreme example of stacking disorder is provided by zeolite beta [1,2], Different stacking sequences give rise to two polymorphs (A and B) in zeolite beta that always coexist in very small domains in the same crystal. Not only do the small domains make the peaks in the powder X-ray diffraction pattern broad and thereby exacerbate the reflection overlap problem, but the presence of stacking faults also gives rise to other features in the diffraction pattern that further complicate structure solution. 

Gold has been used for many years as a minority carrier lifeline controller in Si. As such, it is introduced in a controlled manner, usually by diffusion into transistor structures to decrease the carrier lifetime in the base region in order to increase the switching speed (Ravi, 1981). Conversely, the uncontrolled presence of Au is clearly deleterious to the performance of devices, both because of the increased recombination within the structure and the increase of pipe defects, which can cause shorting of the device. These pipe defects consist of clusters of metallic impurities at dislocations bounding epitaxial stacking faults. 

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