Defects and Radiation Damage

The most important action of energetic ions upon materials is the radiation damage leading to the production of fragments and defects. Since the former are only important in the gas phase and in covalent compounds, we shall cover them in Chap. 5.1. In this section only the defects produced in solids will be considered. 

The formation of defects may be either the desired effect of a bombardment or only the undesirable by-product of an implantation. In both cases some knowledge about the structure and behavior of defects is advantageous. 

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M. W. Thompson, Defects and Radiation Damage in Metals, Cambridge University Press, New York 1969. 

Thompson, M. W. Defects and radiation damage in metals. Cambridge University Press 1969... 

Point defects are involved in many modern subficlds of materials science we shall encounter them again particularly in connection with dilfusion (Chapter 4, Section 4.2.2) and radiation damage (Chapter 5, Section 5.1.3). 

Studies of the coordination chemistry of the actinides have been limited by a number of factors - the care needed in handling radioactive materials and the possibility of damage to human tissue from the radiation toxicity (especially Pu) the very small quantities available and very short half-lives of the later actinides radiation and heating damage to solutions and radiation damage (defects and dislocations) to crystals. 

The interaction of lattice defects in fluorite-like solids under conditions when the thermal motion is restricted, leads to self-assembling of the long-living metastable globular clusters. The same effect was observed in hyper-stoichiometric and radiation-damaged UO2+X Yakub, 2008). At elevated... 

This feature in the In profiles resulted from the complex defects formed by In and radiation damage. Armealing led to an intense emission at about 525nm in the photoluminescence spectrum. This emission was due to defects which were related to the O vacancy. 

Neutron diffraction techniques have been used to substantiate the model for the oscillating structure in the thermal annealing kinetics of Co(en)3,3H20 and Co(en)3(N03)3,3H20. The role of lattice defects is to be considered dominant in manystudiesof thermal annealing of recoil products and radiation damage. " ... 

Transmission electron microscopes (TEM) with their variants (scanning transmission microscopes, analytical microscopes, high-resolution microscopes, high-voltage microscopes) are now crucial tools in the study of materials crystal defects of all kinds, radiation damage, ofif-stoichiometric compounds, features of atomic order, polyphase microstructures, stages in phase transformations, orientation relationships between phases, recrystallisation, local textures, compositions of phases... there is no end to the features that are today studied by TEM. Newbury and Williams (2000) have surveyed the place of the electron microscope as the materials characterisation tool of the millennium . 

In addition to the generation of platelets, hydrogenation of silicon also induces electronic deep levels in the band gap. As in the case of platelet formation, these defects are considered to be unrelated to either plasma or radiation damage because they can be introduced with a remote hydrogen plasma. Comparison of depth distributions and annealing kinetics of the platelets and gap states has been used to a limited extent to probe the relationship among these manifestations of H-induced defects. 

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