Experimental observation of Schottky and Frenkel defects

There are several methods that may be used to study the occurrence of Schottky and Frenkel defects in stoichiometric crystals, but the simplest, in principle, is to measure the 

The following terms were introduced in this chapter. Do you know what they mean  

Housecroft and E.C. Constable (2002) Chemistry, Prentice Hall, Harlow - Chapters 7 and 8 give detailed accounts at an introductory level. 

Wells (1984) Structural Inorganic Chemistry, 5th edn. Clarendon Press, Oxford - Chapters 4 and 6 present careful descriptions, ranging from basic to more advanced material. 

Dictionary of Inorganic Compounds (1992), Chapman and Hall, London - The introduction to Vol. 4 gives a useful summary of structure types. 

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Schottky devices have recently been fabricated by thermal evaporation of indium on polyaniline, poly(o-anisidine) and poly(aniline-co-or oanisidine), respectively [103]. The values of the rectification ratio, the ideality factor and the barrier height of an indium/poly(o-anisidine) have been experimentally determined as 300,4.41 and 0.4972, respectively. The observed deviation from the Schottky behaviour for these devices seen at higher voltages has been explained in terms of either the Poole-Frenkel effect or due to the presence of a large number of defects containing the trapped charges existing at the indium/poly (aniline-co-or oanisidine) interface. 

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