Defect generation

The defects generated in ion—soHd interactions influence the kinetic processes that occur both inside and outside the cascade volume. At times long after the cascade lifetime (t > 10 s), the remaining vacancy—interstitial pairs can contribute to atomic diffusion processes. This process, commonly called radiation enhanced diffusion (RED), can be described by rate equations and an analytical approach (27). Within the cascade itself, under conditions of high defect densities, local energy depositions exceed 1 eV/atom and local kinetic processes can be described on the basis of ahquid-like diffusion formalism (28,29). 

Amorphous Silicon. Amorphous alloys made of thin films of hydrogenated siUcon (a-Si H) are an alternative to crystalline siUcon devices. Amorphous siUcon ahoy devices have demonstrated smah-area laboratory device efficiencies above 13%, but a-Si H materials exhibit an inherent dynamic effect cahed the Staebler-Wronski effect in which electron—hole recombination, via photogeneration or junction currents, creates electricahy active defects that reduce the light-to-electricity efficiency of a-Si H devices. Quasi-steady-state efficiencies are typicahy reached outdoors after a few weeks of exposure as photoinduced defect generation is balanced by thermally activated defect annihilation. Commercial single-junction devices have initial efficiencies of ca 7.5%, photoinduced losses of ca 20 rel %, and stabilized efficiencies of ca 6%. These stabilized efficiencies are approximately half those of commercial crystalline shicon PV modules. In the future, initial module efficiencies up to 12.5% and photoinduced losses of ca 10 rel % are projected, suggesting stabilized module aperture-area efficiencies above 11%. 

While high defect generation rates in the shock can qualitatively be applied to explain the approximately sevenfold yield increase in copper to 210 MPa following loading to a 10 GPa shock [13], significant shock har-... 

The influence of loading rate during shock loading on the defect generation and storage proeesses has been examined in OFE eopper shoek loaded using three different loading rates [51]. These include ... 

M.A. Meyers and L.E. Murr, Defect Generation in Shock-Wave Deformation, in Shock Waves and High-Strain-Rate Phenomena in Metals (edited by M.A. Meyers and L.E. Murr), Plenum, New York, 1981, 487 pp. 

Dick and Styrus [63] report real-time resistivity measurements on shoek-loaded silver foils. The inferred vaeaney eoneentration is 1.5 x 10 per atomie site for samples shoek loaded to 10 GPa. The eombined effect of point-defect generation and reeombination to form vaeaney clusters, for example, can be influential on pulse-duration effeets such reload, release, and recovery. This topie has not yet reeeived the degree of experimental study that it deserves. 

The piezoelectric response investigation also provides direct evidence that significant inelastic deformation and defect generation can occur well within the elastic range as determined by the Hugoniot elastic limit. In quartz, the Hugoniot elastic limit is 6 GPa, but there is clear evidence for strong nonideal mechanical and electrical effects between 2.5 and 6 GPa. The unusual dielectric breakdown phenomenon that occurs at 800 MPa under certain... 

Fig. 5.20. The shock-induced polarization of a range of ionic crystals is shown at a compression of about 30%. This maximum value is well correlated with cation radius, dielectric constant, and a factor thought to represent dielectric strength. A mechanically induced point defect generation and migration model is preferred for the effect (after Davison and Graham [79D01]).

Tiller, W. A. (1991a). The Science of Crystallization Macroscopic Phenomenon and Defect Generation. Cambridge Cambridge University Press., ... 

The dependence of the PL intensity and peak position on oxidation temperature for three different PS samples is shown in Fig. 7.20. Oxidation at 600°C destroys the PL, while the initial PL intensity is restored or even increased after oxidation at 900°C. This effect can be understood as a quenching of PL because of a high density of defects generated during the desorption of hydrogen from the internal surface of PS. Electron spin resonance (ESR) investigations show a defect with an isotropic resonance (g= 2.0055) in densities close to 101 cm for oxidation at 600°C [Pel, Me9]. This corresponds to one defect per crystallite, if the crystallite diameter is assumed to be about 5 nm in diameter. 

Step-mobility-limited models can be further separated into two limits conserved and non-conserved [20]. This terminology refers to the local conservation of mass transport is said to be conserved if a surface defect generated at a step edge eventually annihilates at the same step or at one of the two adjacent steps. Thus, the motion of adjacent steps is coupled. The 1-D conserved model of Nozieres [21] predicts T a L, independent of Zo. On the other hand, in a non-conserved model the motion of adjacent steps is uncorrelated surface defects generated at a step edge can annihilate at any step edge on the surface. Uwaha [22] has considered this case and found x a L L/zay. In the discussion below, we will use these two limiting cases of step-mobility-limited models [21, 221 to extract the step-mobilities on Si(OOl) and Ge(OOl) surfaces from experiments on relaxation kinetics. 

The equilibrium concentration of intrinsic defects in a structure depends on temperature. For the Schottky defect, the equilibrium constant K for the defect-generation reaction is... 

Figure 6.3 (a) Defects generated by P implant cause degradation in current gain through recombination. (b) Effect of emitter-to-base spacing on common emitter current gain. (From [11]. 2004 IEEE. Reprinted with permission.)... 

Point Defect Generation During Phosphorus Diffusion. At Concentrations above the Solid Solubility Limit. The mechanism for the diffusion of phosphorus in silicon is still a subject of interest. Hu et al. (46) reviewed the models of phosphorus diffusion in silicon and proposed a dual va-cancy-interstitialcy mechanism. This mechanism was previously applied by Hu (38) to explain oxidation-enhanced diffusion. Harris and Antoniadis (47) studied silicon self-interstitial supersaturation during phosphorus diffusion and observed an enhanced diffusion of the arsenic buried layer under the phosphorus diffusion layer and a retarded diffusion of the antimony buried layer. From these results they concluded that during the diffusion of predeposited phosphorus, the concentration of silicon self-interstitials was enhanced and the vacancy concentration was reduced. They ruled out the possibility that the increase in the concentration of silicon self-interstitials was due to the oxidation of silicon, which was concurrent with the phosphorus predeposition process. 

---