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Current density pulse

For example, if Qi = 50 tF/cm and R = 2 fi, t = 4.6 X 10 " s (0.46 ms). Thus, in the galvanostatic transient technique, the duration of the input current density pulse is on the order of milliseconds. From a series of measurements of for a set of i values, one can construct the current-potential relationship for an electrochemical process. For example. Figure 6.20 shows the current-potential relationship for the electrodeposition of copper from acid CUSO4 solution. [Pg.105]

Galvanostatic Transient Technique Double-Layer Capacitance Measurements. The value of the fractional surface coverage 9 may be inferred by means of doublelayer capacitance data. As discussed in Section 6.9, the double-layer capacitance C may, in turn, be determined by means of a transient technique. In the galvanostatic transient technique (as in Fig. 6.18), the duration of the constant-current (density) pulse is on the order of microseconds. In the microsecond time range the only process taking place at the electrode is charging of the double layer. Flence, in this case, Eq. (6.96) reduces to... [Pg.188]

The electrodeposition of metals from ionic liquids is a novel method for the production of nanocrystalline metals and alloys, because the grain size can be adjusted by varying the electrochemical parameters such as over-potential, current density, pulse parameters, bath composition and temperature and the liquids themselves. Recently, for the first time, nanocrystalline electrodeposition of Al, Fe and Al-Mn alloy has been demonstrated. [Pg.9]

For the electrodeposition of laminar metal coatings, two conditions must be fulfilled (1) The reversible potentials for metals A and B must be sufficiently different so that at a given current density, the less noble one (B) virtually does not electrodeposit during the electrodeposition of the more noble one (A) until complete concentration polarization with respect to ions of metal A takes place (2) within the duration of the current density pulse, Send s equation [15] for diffusional polarization is obeyed with respect to concentration change, resulting in transition from electrodeposition of metal A to electrodeposition of metal B after well-defined transition time. [Pg.270]

Fig. 7.35 Schematic representation of the partial current density changes (a) and corresponding potential response (b) during the electrodeposition of two-layer of metals A and A - - B by constant current density pulse (k) up to time T and during the replacement reaction at i = 0. Partial curroit density for electrodeposition of metal A after reaching ta, id(A) partial current density for electrodeposition of metal B after reaching Ta, id(B) partial current density for electrodeposition of metal A during the replacement reaction, id(A)r partial current density for dissolution of metal B during the replacement reaction, idiss(B)r (Reprinted from Ref. [5] with kind permission from Springer)... Fig. 7.35 Schematic representation of the partial current density changes (a) and corresponding potential response (b) during the electrodeposition of two-layer of metals A and A - - B by constant current density pulse (k) up to time T and during the replacement reaction at i = 0. Partial curroit density for electrodeposition of metal A after reaching ta, id(A) partial current density for electrodeposition of metal B after reaching Ta, id(B) partial current density for electrodeposition of metal A during the replacement reaction, id(A)r partial current density for dissolution of metal B during the replacement reaction, idiss(B)r (Reprinted from Ref. [5] with kind permission from Springer)...
If the difference between the reversible potentials of metals A and B is sufficient, and the constituents of the alloy mix in the solid state forming solid solution and a metal B passivates in the electrolyte used (case b), replacement reaction will not take place during the off-time (/ = 0). Such a case is schematically presented in Fig. 7.37. The current density change is presented in (a), while corresponding potential change is presented in (b). During the current density pulse, everything is the same as in a previous case. The absence of replacement reaction is... [Pg.273]

Fig. 7.38 A sequence of high current density pulses (a) and corresponding potential responses (b) (marked with numbers 1-7) during the formation of two-layer structure composed of a pure (first) Cu layer of about 2 pm and the second layer of different Cu-Ni alloy compositions of a thickness of about 12 pm. The current density ratio, c.r. -/(Ni)//(Cu)L, for pulse no. 1-2.0, no. 2-5.3, no. 3-13.3, no. 4-27.6, no. 5-36.5, no. 6-56.1, no. 7-61.5 (Reprinted from Ref. [5] with kind permission from Springer)... Fig. 7.38 A sequence of high current density pulses (a) and corresponding potential responses (b) (marked with numbers 1-7) during the formation of two-layer structure composed of a pure (first) Cu layer of about 2 pm and the second layer of different Cu-Ni alloy compositions of a thickness of about 12 pm. The current density ratio, c.r. -/(Ni)//(Cu)L, for pulse no. 1-2.0, no. 2-5.3, no. 3-13.3, no. 4-27.6, no. 5-36.5, no. 6-56.1, no. 7-61.5 (Reprinted from Ref. [5] with kind permission from Springer)...
Fig. 7.40 Current density pulses and corresponding potential responses applied for the formation of multilayer structure presented in Fig. 7.39 (Reprinted from Ref. [5] with kind permission from Springer)... Fig. 7.40 Current density pulses and corresponding potential responses applied for the formation of multilayer structure presented in Fig. 7.39 (Reprinted from Ref. [5] with kind permission from Springer)...
Fig. 6 Pore size distributions in PS 100 samples obtained by applying a constant cmrent density open circles, porous film thickness 70 pm) and using the stop-etch procedure filled circles, porous film thickness 90 pm) with the same current density pulses applied for 1 s intermittent with 10 s refreshment periods... Fig. 6 Pore size distributions in PS 100 samples obtained by applying a constant cmrent density open circles, porous film thickness 70 pm) and using the stop-etch procedure filled circles, porous film thickness 90 pm) with the same current density pulses applied for 1 s intermittent with 10 s refreshment periods...
Many applications require the material to be separated from the wafer (e.g., for conversion to powder). Separation can be aehieved in situ (Solanki et al. 2004) by applying a short high current density pulse at the end of the anodization process, a process akin to electropohshing the pulse duration and amplitude are ehosen to facilitate either partial or full detachment in the anodization equipment once the eeU is drained, the wet layer (sometimes fragmented) remains on the surface of the wafer through surfaee tension, with full separation obtained outside of the anodization... [Pg.562]

Each approach has its merits and limitations. With very thick wafer anodization, there can be a substantial porosity gradient with depth across the membrane very thin solid membranes while commercially available can be expensive at large size and difficult to handle the lift off technique introduces some asymmetry into the membrane since a high current density pulse is applied to one side. [Pg.706]

With the applied cathodic current density pulses larger than the limiting diffusion current density, parallel to copper electrodeposition hydrogen evolution reaction occurs [52]. On the other hand, there was not any gas evolution during anodic pulses indicating that the overall gas evolution corresponds to hydrogen evolution. Then, Eq. (4.22) can be modified by Eq. (4.25) ... [Pg.232]

Pulsed ECM (PECM) may be a promising way to improve dimensional accuracy control and also to simplify tool design. Accuracies as fine as 0.002 mm have been quoted using current pulse lengths of ca 0.2 to 2.0 ms, at current densities of 55 A/cm. Pulse offtimes are from 1 to 2 ms (7). [Pg.309]

Each of these two procedures can be varied by proceeding from a low to a high current density (or potential) or from a high to a low current density (or potential) the former is referred to as forward polarisation and the latter as reverse polarisation. Furthermore, there are a number of variations of the potentiostatic technique, and in the potentiokinetic method the pwtential of the electrode is made to vary continuously at a predetermined rate, the current being monitored on a recorder in the pulse method the electrode is given a pulse of potential and the current transient is determined by means of an oscilloscope. [Pg.107]

Using pulse plating techniques with a duty cycle of 50%, it is also possible to produce crack-free chromium deposits from a sulphate- or silicofluoride-catalysed solution with a hardness similar to deposits obtained by direct currenf . A high frequency (2 000-3 000 Hz) is required to give the hardest deposits at a current density of 40 A/dm and a temperature of 54°C. It is important to avoid conditions that will co-deposit hydrides. [Pg.551]

Fig. 2 shows the dynamic response of stack voltage to the step changes of various applied current densities. Like the former case of applied current pulses, the response exhibits the overshooting and relaxation which is caused by the methanol oxidation kinetics on the catalyst surface. The steady state stack voltage was found to be the same for both pulse and step loads with the same current density. [Pg.594]

Fig. 2.9.2 Radiofrequency, field gradient and current distributions requires a three-dimen-ionic current pulse sequences for two-dimen- sional imaging sequence [see Figure 2.9.1(a)] sional current density mapping. TE is the Hahn and multiple experiments with the orientation spin-echo time, Tc is the total application time of the sample relative to the magnetic field of ionic currents through the sample. The 180°- incremented until a full 360°-revolution is pulse combined with the z gradient is slice reached. The polarity of the current pulses... Fig. 2.9.2 Radiofrequency, field gradient and current distributions requires a three-dimen-ionic current pulse sequences for two-dimen- sional imaging sequence [see Figure 2.9.1(a)] sional current density mapping. TE is the Hahn and multiple experiments with the orientation spin-echo time, Tc is the total application time of the sample relative to the magnetic field of ionic currents through the sample. The 180°- incremented until a full 360°-revolution is pulse combined with the z gradient is slice reached. The polarity of the current pulses...
Ionic current density maps can be recorded with the aid of the pulse sequence shown in Figure 2.9.2. The principle of the technique [48-52] is based on Maxwell s fourth equation for stationary electromagnetic fields,... [Pg.223]


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Pulsed current

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