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Crystal screw dislocation

However, an important parameter that has been ignored in this approach is the surface tension at the interface. The interfadal tension T can be taken into account in an elementary way as is generally done for crystal screw dislocations. The total energy of the disclination in the one-constant approximation, including the energy at the core surface, is... [Pg.144]

Fig. VII-8. (a) Screw dislocation (from Ref. 115). (b) The slip that produces a screw-type dislocation. Unit slip has occurred over ABCD. The screw dislocation AD is parallel to the slip vector. (From W. T. Read, Jr., Dislocations in Crystals, McGraw-Hill, New York, 1953, p. 15.)... Fig. VII-8. (a) Screw dislocation (from Ref. 115). (b) The slip that produces a screw-type dislocation. Unit slip has occurred over ABCD. The screw dislocation AD is parallel to the slip vector. (From W. T. Read, Jr., Dislocations in Crystals, McGraw-Hill, New York, 1953, p. 15.)...
A number of theories have been put forth to explain the mechanism of polytype formation (30—36), such as the generation of steps by screw dislocations on single-crystal surfaces that could account for the large number of polytypes formed (30,35,36). The growth of crystals via the vapor phase is beheved to occur by surface nucleation and ledge movement by face specific reactions (37). The soHd-state transformation from one polytype to another is beheved to occur by a layer-displacement mechanism (38) caused by nucleation and expansion of stacking faults in close-packed double layers of Si and C. [Pg.464]

The specific resistance of natural graphite crystals is ca Hem (room temperature) along the a axis parallel to the network basal plane. The resistance along the c axis (perpendicular to the basal plane) is ca 1 Q. The cja axis anisotropy ratio is, therefore, ca 10 . Screw dislocations within the crystal may short-circuit the current path parallel to the c axis and cause lower anisotropic ratios separation of planes may cause higher anisotropic ratios. [Pg.572]

Flinn et al. [30] describes an experimental impact technique in which <100)-oriented LiF single crystals ( 8 ppm Mg) are loaded in a controlled manner and the multiplication of screw dislocations is measured. The peak shear stress in this relatively soft material is 0.01 GPa. For shear impulses exceeding approximately 40 dyne s/cm, dislocation multiplication is adequately described by the multiple-cross-glide mechanism [(7.24)] with m = l/bL = (2-4) X 10 m, in reasonable agreement with quasi-static measurement [2]. [Pg.229]

In making the edge dislocation of Fig. 9.3 we could, after making the cut, have displaced the lower part of the crystal under the upper part in a direction parallel to the bottom of the cut, instead of normal to it. Figure 9.7 shows the result it, too, is a dislocation, called a screw dislocation (because it converts the planes of atoms into a helical surface, or screw). Like an edge dislocation, it produces plastic strain when it... [Pg.99]

Fig. 9.8. Sequence showing how a screw dislocation moves through a crystal causing the lower half of the crystal (o) to slip by a distance b under the upper half (x). Fig. 9.8. Sequence showing how a screw dislocation moves through a crystal causing the lower half of the crystal (o) to slip by a distance b under the upper half (x).
Explain briefly what is meant by a dislocation. Show with diagrams how the motion of (a) an edge dislocation and (b) a screw dislocation can lead to the plastic deformation of a crystal under an applied shear stress. Show how dislocations can account for the following observations ... [Pg.279]

Figure 3.22. Screw dislocation and crystal growth, after W.T. Read. Figure 3.22. Screw dislocation and crystal growth, after W.T. Read.
Figure 3.23. A growth spiral on a silicon carbide crystal, originating from the point of emergence of a screw dislocation (courtesy Prof, S, Amelinckx). Figure 3.23. A growth spiral on a silicon carbide crystal, originating from the point of emergence of a screw dislocation (courtesy Prof, S, Amelinckx).
Charles Frank and his recognition, in 1949, that the observation of ready crystal growth at small supersaturations required the participation of screw dislocations emerging from the crystal surface (Section 3.2.3.3) in this way the severe mismatch with theoretical estimates of the required supersaturation could be resolved. [Pg.199]

Figure 5.5 Development of a crystal growth spiral staring from a screw dislocation... Figure 5.5 Development of a crystal growth spiral staring from a screw dislocation...
So far we have discussed the surface of a perfect crystal. But for an imperfect crystal there is another possibility to provide a step source. This is due to the screw dislocation. Assume that one cuts a crystal half-way from one side into the center, and slides the freshly created two faces against each other in... [Pg.873]

One can now immediately deduce the normal growth rate of a crystal due to the screw dislocation. Whenever a step edge passes by a fixed point on the crystal surface, this point gains the height of a lattice unit. The normal growth rate V of the crystal is then... [Pg.874]

By their nature, dislocations cannot end suddenly in the interior of a crystal a dislocation line can only end at a free surface or a grain boundary (or form a closed loop). Where a screw dislocation intersects a free surface there is inevitably a step or ledge in the surface, one atomic layer high, as shown in Fig. 20.30c. Furthermore, the step need not necessarily be straight and will, in fact, almost certainly contain kinks. [Pg.1269]

This type of volume defect in the crystal is known as a "screw dislocation", so-called because of its topography. Note that the spiral dislocation of the growing lattice deposits around the Une defect at right angles to the line defect. [Pg.86]

Dislocations Dislocations are stoichiometric line defects. A dislocation marks the boundary between the slipped and unslipped parts of crystal. The simplest type of dislocation is an edge dislocation, involving an extra layer of atoms in a crystal (Fig. 25.2). The atoms in the layers above and below the half-plane distort beyond its edge and are no longer planar. The direction of the edge of the half-plane into the crystal is know as the line of dislocation. Another form of dislocation, known as a screw dislocation, occurs when an extra step is formed at the surface of a crystal, causing a mismatch that extends spirally through the crystal. [Pg.421]

The basic condition for experimental study of nucleation on an identical surface requires that this surface be a single crystal face without screw dislocations (page 306). Such a surface was obtained by Budevski et at. when silver was deposited in a narrow capillary. During subsequent deposition of silver layers the screw dislocations died out so that finally a surface of required properties was obtained. [Pg.383]

The electrocrystallization on an identical metal substrate is the slowest process of this type. Faster processes which are also much more frequent, are connected with ubiquitous defects in the crystal lattice, in particular with the screw dislocations (Fig. 5.25). As a result of the helical structure of the defect, a monoatomic step originates from the point where the new dislocation line intersects the surface of the crystal face. It can be seen in Fig. 5.48 that the wedge-shaped step gradually fills up during electrocrystallization after completion it slowly moves across the crystal face and winds up into a spiral. The resultant progressive spiral cannot disappear from the crystal surface and thus provides a sufficient number of growth... [Pg.386]

The anodic dissolution of metals on surfaces without defects occurs in the half-crystal positions. Similarly to nucleation, the dissolution of metals involves the formation of empty nuclei (atomic vacancies). Screw dislocations have the same significance. Dissolution often leads to the formation of continuous crystal faces with lower Miller indices on the metal. This process, termed facetting, forms the basis of metallographic etching. [Pg.388]

A naturally occurring chiral metal structure is a screw dislocation (Fig. 3.4),11 which is a chiral arrangement observed in metal crystals but never resolved and tested for enantioselective heterogeneous catalysis. A possible method of making chiral arrangements like screw dislocations is by the glancing angle deposition technique, which can produce chiral sculptured thin films.12... [Pg.104]

Figure 4.2 Quasi-hexagonal dislocation loop lying on the (111) glide plane of the diamond crystal structure. The <110> Burgers vector is indicated. A segment, displaced by one atomic plane, with a pair of kinks, is shown a the right-hand screw orientation of the loop. As the kinks move apart along the screw dislocation, more of it moves to the right. Figure 4.2 Quasi-hexagonal dislocation loop lying on the (111) glide plane of the diamond crystal structure. The <110> Burgers vector is indicated. A segment, displaced by one atomic plane, with a pair of kinks, is shown a the right-hand screw orientation of the loop. As the kinks move apart along the screw dislocation, more of it moves to the right.
Figure 5.1 shows a schematic elevation through a kink on a screw dislocation in the diamond crystal structure. The black circles lie in the plane of the figure. The white ones lie in a plane in front of the figure, and the gray ones in a plane behind the figure. The straight lines represent electron pair bonds... [Pg.67]

Cross-gliding of screw dislocations has an important effect on the overall plastic deformations of crystals because it is the primary cause of both multiplication, and strain-hardening as discussed above. [Pg.95]


See other pages where Crystal screw dislocation is mentioned: [Pg.159]    [Pg.497]    [Pg.159]    [Pg.497]    [Pg.276]    [Pg.277]    [Pg.341]    [Pg.18]    [Pg.345]    [Pg.33]    [Pg.122]    [Pg.117]    [Pg.320]    [Pg.113]    [Pg.874]    [Pg.317]    [Pg.389]    [Pg.1240]    [Pg.1186]    [Pg.1264]    [Pg.1270]    [Pg.237]    [Pg.75]    [Pg.259]    [Pg.317]    [Pg.22]    [Pg.75]    [Pg.95]   
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