Circuits simulators

R. Hattori, Y. Kuroki, and J. Kanicki, Analog-circuit simulation of the current-programmed active-matrix pixel electrode circuits based on poly-Si TFT for organic light-emitting displays, Proc. AM-LCD, 223-226, 2001. 

Capture CIS Lite Edition to run the schematic capture circuit simulation... 

The drawback of the ideal op-amp model is that none of the non-ideal properties are modeled. In this example, if a non-ideal op-amp model were used in the simulation, the integrator would not work because of bias currents. If this circuit were tested in the laboratory, it also would not work because of bias currents. Thus, the circuit simulation with a non-ideal op-amp matches the results in the lab, but the circuit simulation with an ideal op-amp does not match the lab results. For this example, the ideal model is not a good choice for simulation because it does not match the results in the lab. We will use it here for demonstration purposes only. See EXEHCI5E 6-15 to learn how this integrator performs using non-ideal op-amps. In general, you should always use the non-ideal op-amp models if possible. The only reason you should use the ideal op-amp model is if the circuit is too large for the Lite version of Capture. 

This authoritative book shows students how to use the PSpice circuit simulation program with the schematic capture front end, Capture . It features an abundant collection of examples that demonstrate how to create a circuit, run different analyses, and obtain results from those analyses. 

This manual is designed to show students how to use the PSpice circuit simulation program from Oread with the schematic capture front end, Capture. It is a collection of examples that show students how to create a circuit, how to run the different analyses, and how to obtain the results from those analyses. This manual does not attempt to teach students circuit theory or electronics that task is left for the main text. Instead, the manual takes the approach of showing students how to simulate many circuits found throughout the engineering curriculum. An example is the DC circuit shown below. 

Still, there are limitations to the capabilities of SPICE and similar circuit simulators. While the sophistication of simulation increases, the hardware breadboard will still remain a necessary step in the design process. This book will aid the engineer in using SPICE simulation as a very powerful tool in the design process. 

The theory of operation of each circuit is discussed, followed by the circuit schematic, the simulation results, and a comparison to laboratory data. Advantages and disadvantages of each circuit are added, along with any tips or hints useful in modeling the circuit accurately. We have attempted to perform each simulation using several versions of SPICE for comparison. Also included are the run times for each circuit simulation. 

Steven M. Sandler is the founder of AEi Systems, LLC, the world leader in SPICE modeling and worst case circuit analysis since 1995. He has developed and taught courses at Motorola University and has published many books and articles on circuit simulation for McGraw-Hill and Power Electronics, PCIM, and PEIN magazines. 

It is rarely addressed in the literature that for molecular versions of circuit elements to be useful, there has to be the possibility to connect them together in a way where their electrical characteristics — measured individually between electrodes — would be preserved in the assembled circuit. However, it has been recently shown that such a downscaling of electrical circuits within classical network theory cannot be realized due to quantum effects, which introduce additional terms into Kirchhoff s laws and let the classical concept of circuit design collapse [16]. Circuit simulations on the basis of a topological scattering matrix approach have corroborated these results [34]. 

Based on this design a memory/adder model (Fig. 6(c)) using 464 transistors could be constructed and evaluated on grounds of SPICE circuit simulations. Four bits of information were read from four different memory cells, added as two 2-bit words, and the resulting 2-bit was moved through registers (clocked D-latches) to a subsequent computation. It must be noted... 

With an increase in integration scale it is becoming increasingly necessary to develop tools for the realistic simulation and optimization of the circuitry. An enabling factor is to improve the understanding of device and circuit operation and the awareness of the link between the two. This can be achieved via in-depth transistor modeling, circuit simulation and clever qualitative analysis, as will be discussed after we have introduced our technology. 

The required field-effect mobility for our display can be determined by performing circuit simulations with the circuit shown in Fig. 14.7. The term ju0 in Eq. (1) is... 

T. A. Fjeldly, T. Ytterdal, M. Shur, Introduction to Device Modeling and Circuit Simulation, John Wiley Sons, New York, 1998. 

Twinanga E.W., A Guide to Circuit Simulation and Analysis Using PSPICE, Prentice-Hall, New Jersey (1992)... 

Figure 2.37 shows an example impedance spectrum of an electrochemical system with two time constants. Figure 2.37a, b, and c are the equivalent circuit, simulated Nyquist diagram, and Bode plot, respectively. 

An interesting investigation on the influence of multiplicative non-white noise in an analog circuit simulating a Langevin equation of a Brownian particle in a double-well potential has been carried out by Sancho et al. This device allowed them to study the stationary properties as a function of the noise correlation time. Theory in a white-noise limit cannot provide a satisfactory explanation for experimental results such as a relative maximum of the probability distribution and the maximum position in the stationary distribution for noises of weak intensity. 

Figure 1. A block diagram of the electronic circuit simulating a double-well potential.

Researches of RTNS in relation to spintronics has mainly an experimental character [3]. Theoretical ones are pointed at physical modeling of spin-dependent processes in RTNS, while models appropriate for integrated circuit simulation are important. In this paper an equivalent circuit (EC) of RTNS taking into account spin processes is describe. 

Figure 2.14 Equivalent electric circuit simulating the metal deposition process on a stepped surface according to [2.321. Cdi, double layer capacitance Cads, adatom pseudo-capacitance Ret. adatom charge transfer resistance ggd. adatom surface diffusion resistance R e, adatom incorporation resistance Rdt, resistance of the direct transfer reaction 4tep. step half-distance.

Process design and operation, which are the central and important areas in chemical engineering, have attracted many applications of MOO since the year 2000. In all, there are 35 applications of MOO for process design and operation (Table 2.1). These cover fluidized bed dryer, cyclone separator, a pilot scale venturi scrubber, hydrogen cyanide production, heat exchanger network, grinding, froth floatation circuits, simulated moving bed (SMB) and related separation systems, thermal... 

McAdams H. and Shapiro L. (1995). Circuit simulation of genetic networks. Science. 269, pp 650-656. 

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