Charge extrinsic

In an extrinsic semiconductor, tlie conductivity is dominated by tlie e (or h ) in tlie CB (or VB) provided by shallow donors (or acceptors). If tlie dominant charge carriers are negative (electrons), tlie material is called n type. If tlie conduction is dominated by holes (positive charge carriers), tlie material is called p type. 

Intrinsic defects (or native or simply defects ) are imperfections in tire crystal itself, such as a vacancy (a missing host atom), a self-interstitial (an extra host atom in an otherwise perfect crystalline environment), an anti-site defect (in an AB compound, tliis means an atom of type A at a B site or vice versa) or any combination of such defects. Extrinsic defects (or impurities) are atoms different from host atoms, trapped in tire crystal. Some impurities are intentionally introduced because tliey provide charge carriers, reduce tlieir lifetime, prevent tire propagation of dislocations or are otlierwise needed or useful, but most impurities and defects are not desired and must be eliminated or at least controlled. 

Semiconducting Ceramics. Most oxide semiconductors are either doped to create extrinsic defects or annealed under conditions in which they become non stoichiometric. Although the resulting defects have been carefully studied in many oxides, the precise nature of the conduction is not well understood. Mobihty values associated with the various charge transport mechanisms are often low and difficult to measure. In consequence, reported conductivities are often at variance because the effects of variable impurities and past thermal history may overwhelm the dopant effects. 

The proposed scenario is mainly based on the molecular approach, which considers conjugated polymer films as an ensemble of short (molecular) segments. The main point in the model is that the nature of the electronic state is molecular, i.e. described by localized wavefunctions and discrete energy levels. In spite of the success of this model, in which disorder plays a fundamental role, the description of the basic intrachain properties remains unsatisfactory. The nature of the lowest excited state in m-LPPP is still elusive. Extrinsic dissociation mechanisms (such as charge transfer at accepting impurities) are not clearly distinguished from intrinsic ones, and the question of intrachain versus interchain charge separation is not yet answered. 

Initiation of the fibrin clot in response to tissue injury is carried out by the extrinsic pathway. How the intrinsic pathway is activated in vivo is unclear, but it involves a negatively charged surface. The intrinsic and extrinsic pathways converge in a final common path-vray involving the activation of prothrombin to thrombin and the thrombin-catalyzed cleavage of fibrinogen to form the fibrin clot. The intrinsic, extrinsic, and final common pathways are complex and involve many different proteins (Figure 51-1 and Table 51-1). In... 

Extrinsic Defects Extrinsic defects occur when an impurity atom or ion is incorporated into the lattice either by substitution onto the normal lattice site or by insertion into interstitial positions. Where the impurity is aliovalent with the host sublattice, a compensating charge must be found within the lattice to pre-serve elec-troneutality. For example, inclusion of Ca in the NaCl crystal lattice results in the creation of an equal number of cation vacancies. These defects therefore alter the composition of the solid. In many systems the concentration of the dopant ion can vary enormously and can be used to tailor specific properties. These systems are termed solid solutions and are discussed in more detail in Section 25.1.2. 

The MBPs are extrinsic proteins localized exclusively at the cytoplasmic surface in the major dense line (Fig. 4-11), a conclusion based on their amino acid sequence, inaccessibility to surface probes and direct localization at the electron microscope level by immunocytochemistry. There is evidence to suggest that MBP forms dimers, and it is believed to be the principal protein stabilizing the major dense line of CNS myelin, possibly by interacting with negatively charged lipids. A severe hypomyelination and failure of compaction of the major dense line in MBP deficient shiverer mutants supports this hypothesis (Table 4-2). 

Degenerate semiconductors can be intrinsic or extrinsic semiconductors, but in these materials the band gap is similar to or less than the thermal energy. In such cases the number of charge carriers in each band becomes very high, as does the electronic conductivity. The compounds are said to show quasi-metallic behavior. 

Both electrons and holes are mobile charge carriers in semiconductors. The mobile charge carrier whose concentration is much greater than the other is called the majority carrier, and the minority carrier is in much smaller concentrations. In n-type semiconductors, the mcgority carriers are electrons in the conduction band and the minority carriers are holes in the valence band. The product of the concentrations of majority and minority carriers (electrons and holes) in a semiconductor of extrinsic type (containing impurities) equals the square of the concentration of electron-hole pairs, ni, in the same semiconductor of intrinsic type (containing no impurities) ... 

Current is not measured at equilibrium. Each electroanalytical laboratory will own its own set of electrodes, some large and some small. The current actually measured will be a simple function of the electrode area since charge is passed when electrolyte impinges on a electrode (if it is sufficiently polarized). Wfe see that current is an extrinsic quantity because its value depends on how much something we employ during the measurement. In this case, the something i.e. the current, relates to the electrode area. 

In this chapter we describe the use of polyelectrolytes carrying redox-active centers on electrode surfaces with particular emphasis on organized layer-by-layer redox polyelectrolyte multilayers (RPEM). In redox-active polyelectrolyte multilayers the polyion-polyion intrinsic charge compensation can be broken by ion exchange driven by the electrochemical oxidation and reduction forming extrinsic polyion-counterion pairing. In this chapter we describe the structure, dynamics and applications of these systems. 

It is important to realize that these oligomers have similarly low vapor pressures as ionic liquids. To illustrate the effect of extrinsic charge carrier formation, the evolution of proton conductivity with triflic acid doping is shown for the oligomeric system Imi-2 in Figure For such systems, the mobility of... 

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