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Boron high pressure melting

Ca3(BN2)2 is readily formed when (distilled) calcium metal is melted in the presence of (layer-type) boron nitride. This reaction provides some insight on how alkaline-earth metals like calcium may act as a catalyst in the phase transformation of layered a-BN into its cubic modification. Instead of metals, nowadays alkaline-earth (Ca, Sr, Ba) nitridoborates can be used as a flux catalyst in high-pressure and high-temperature transformation reactions to produce cubic boron nitride [15]. [Pg.126]

In addition to thin-film electrodes, compact diamond single crystals grown at high temperature and high pressure have become the object of electrochemical study in recent years. These so-called HTHP crystals can be obtained by crystallization from a carbon solution in a metal melt (e.g., based on the Ni-Fe-Mn system) at /arranges that correspond to the conditions of thermodynamic stability of diamond. These crystals can be also doped with boron in the course of growth. [Pg.216]

Considering the results of these experiments, we can assume that boron combustion at high nitrogen pressures corresponds to the elemental combustion model of the second type, namely, the model of high-temperature melting. [Pg.29]

While the direct conversion of a-BN to p-BN is of high interest for the preparation of p-BN semiconductors, large scale production of p-BN is performed by catalyst-aided procedures under careful control of the amount of the catalyst [36]. The catalyst material has to be removed after the end of the phase transformation process by treatment with base (sometimes acid) in order to dissolve unreacted a-BN and the catalysts, since they are not included in the lattice of the resultant p-BN. Under the high pressure and temperatures required for the phase transformation, the catalysts and their reaction products with boron nitride form a melt from which p-BN crystallizes. The temperature for the process is lowered by eutectic formation between the catalyst and BN (see discussion by [1]). [Pg.8]

The combination of high exothermicity and lower exothermicity reactions can be successfully applied to fabricate in situ boron-based CMCs by means of SHS under high pressure (200MPa), when the products have a lower melting point than the exothermic effect during synthesis. [Pg.136]

Properties. Under nitrogen pressure hexagonal boron nitride melts at about 3000°C but sublimes at about 2500°C at atmospheric pressure. Despite the high melting point, the substance is mechanically weak because of the relatively easy sliding of the sheets of rings past one another (3). The theoretical density is 2.27 g/mL and the resistivity is about 10 H-cm. [Pg.220]

Another candidate material for high temperature fiber is titanium diboride. It has a melting point of around 3000°C. Diefendorf and Mazlout (1994) used a gas mixture of titanium tetrachloride boron trichloride, hydrogen, and hydrochloride to make titanium diboride fibers by chemical vapor deposition (CVD) in a cold wall reactor at atmospheric pressure. [Pg.173]

These adhesives consist of a polymerizable liquid matrix and large volume fractions -of electrically insulating thermally conductive filler. Typical matrix materials are epoxies, silicones, urethanes, and acrylates, although solvent-based systems, hot-melt adhesives, and pressure-sensitive adhesive tapes are also available. Aluminum oxide, boron nitride, zinc oxide, and increasingly aluminum nitride are used as fillers for these types of adhesives. The filler loading can be as high as 70 - 80 wt %, and the fillers raise the thermal conductivity of the base matrix from 0.17-0.3 up to about... [Pg.84]


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See also in sourсe #XX -- [ Pg.49 ]




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