Boron doping effects

Other reverse-bias annealing experiments have been published that can be analyzed in the same way. Tavendale et al. (1985) used 10 ft cm boron-doped silicon passivated by exposure to plasmas containing or 2H. Schottky diodes formed with such specimens showed breakup of BH under heating at 80°C with reverse bias however, there was a persistence of passivation in the first two or three microns that must be attributed to some sort of near-surface reservoir of hydrogen. This effect was absent in an annealing experiment on a junction diode with an -type surface... 

M. M. S. Fakhrabadi, A. Allahverdizadeh, V. Norouzifard, B. Dadashzadeh, Effects of boron doping on mechanical properties and thermal conductivities of carbon nanotubes., Solid State Communications, vol. 152, pp. 1973-1979, 2012. 

H. Y. Song, X. W. Zha, The effects of boron doping and boron grafts on the mechanical properties of single-walled carbon nanotubes., Journal of Physics D-Applied Physics 2009,... 

Heavily doped (>1018/cm3) n-type Si and poly-Si etch faster in Cl- and F-containing plasmas than do their boron-doped or undoped counterparts (103a, 105, 111, 112). Because ion bombardment is apparently not required in these cases, isotropic etch profiles (undercutting) in n + poly-Si etching often occur. Although the exact mechanisms behind these observations are not completely understood, enhanced chemisorption (103b, 111) and space charge effects on reactant diffusion (112) have been proposed. 

Fig. 18. Time development of resistance of a 0.5 micron film of silicon grown epitaxially on sapphire during plasma-product hydrogenation at 200°C and effect of subsequently turning the plasma off and then on again (Johnson and Herring, 1988b). The boron doping was 1.5 x 1019 cm-3.

AP-CVD ZnO Hu and Gordon [10,28] observed an increase of electron mobility p with increasing film thickness d, both for boron-doped and for gallium-doped AP-CVD ZnO films, with a more pronounced slope for small thickness. They attributed this behavior to the influence of the grain boundary scattering effect, which is dominant for thinner films that are composed of smaller crystallites. 

Optical absorption spectra of as-grown and laser-annealed areas are shown in Fig. 11 for an undoped and a B-doped a-Si H film (Staebler, 1979). Phosphorus-doped films have an absorption characteristic straddling between the undoped and the boron-doped films but showed additional illumination effects. These curves revealed that all films darken on exposure... 

In order to realize junction 4ight-emitting diodes (LEDs) having the same structure as that of practical III-V compound semiconductor LEDs, we must achieve n- and p-type conductivity control. The phosphorus and boron doping, which is known to be effective for obtaining high-conductivity n- and p-type a-Si H, respectively, seems to be less effective for the... 

Polcaro, A.M., Vacca, A., Mascia, M. and Palmas, S. (2005) Oxidation at boron doped diamond electrodes Effective method to mineralise triazines. Electrochim. Acta 50, 1841-1847. 

Pignatello, J.J. (1992) Dark and photoassisted iron (3+)-catalyzed degradation of chlorophenoxy herbicides by hydrogen peroxide. Environ. Sci. Technol. 26, 944-951 Polcaro, A.M., Mascia, M, Palmas, S. and Vacca, A. (2002) Electrochemical oxidation of phenolic and other organic compounds at boron doped diamond electrodes for wastewater treatment Effect of mass transfer. Ann. Chim. 93, 967-976... 

Polcaro, A.M., Mascia, M., Palmas, S. and Vacca, A. (2004) Electrochemical degradation of diuron and dichloroaniline at BDD electrode. Electrochim. Acta, 49,649-656 Polcaro, A.M., Vacca, A., Mascia, M. and Palmas, S. (2005) Oxidation at boron doped diamond electrodes An effective method to mineralise triazines. Electrochim. Acta 50,1841-1847 Posada, D., Betancourt, P., Liendo, F. and Brito, J.L. (2006) Catalytic wet air oxidation of aqueous solutions of substituted phenols. Catal. Lett. 106, 81-88 Rajeshwar, K. and Ibanez, J. (1997) Fundamentals and Applications in Pollution Abatement, Academic, New York, NY... 

The dopants also have a catalytic influence on the deposition of the silicon, with the largest effect being induced by boron doping. Under CVD growth conditions, the deposition rate of the silicon increases by about 40% at a boron gas phase concentration of 1 %. Phosphorus doping suppresses the growth rate, but by a smaller amount. Fig. 5.5 shows the growth rates of compensated a-Si H and illustrates both effects. 

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