Bias-stress effect

Because the electrophoretic display effect that is used is multi-stable, the row drivers are only operational during an image update. This is different from the commonly used LC display effects that need to be driven continuously during use of the display. In view of bias stress effects, this makes the electrophoretic display effect ideal for integration of row drivers in organic electronics. 

R. A. Street, A. Salleo, M. L. Chabinyc, Bipolaron mechanism for bias-stress effects in polymer transistors, Phys. Rev. B 2003, 68, 085316. 

Chang JB, Subramanian V. (2006) Effect of active layer thickness on bias stress effect in pentacene thin-film transistors. Appl Phys Lett 88 233513. 

Bias stability. Additionally and perhaps of a greater concern for RFID applications, most organic devices to date show substantial bias stress effect, where their threshold voltage shifts during use. The mechanisms for this are currently being debated however, the consequence is that organic devices show a history-dependent performance, which is problematic from a circuit design perspective, for obvious reasons. 

G. Gu, personal communication. On the other hand, it has been reported that illumination can assist in recovery from bias-stress effects in polymer TFTs. See Salleo, A. and Street, R.A., Light-induced bias stress reversal in polyfluorene thin-film transistors, J. Appl. Phys., 94, 471 2003. 

Extension of Time Scale Channel Charge Buildup and Bias Stress Effects. 105... 

Due to the inherent instability of characteristics of OFET caused by bias stress effect, the response of the pulse is recorded at the first instant the pulse is applied. The... 

Bias stress effect resulting in long term instability has been of the biggest concerns in the field of organic transistors. Even with improved processing and passivation of active layer, organic devices exhibit shift in threshold voltages and consequent reduction in current due to this effect. The exact reason for the bias stress is still... 

T. Sekitani, S. Iba, Y. Kato, Y. Noguchi, T. Someya, T. Sakurai, Suppression of DC bias stress-induced degradation of organic field-effect transistors using postannealing effects, Appl. Phys. Lett. 2005, 87, 073505. 

Bias-stress instability and hysteresis are memory effects in which the DC characteristics of a transistor at a given time depend on voltages applied to the device in the past. From the standpoint of design, these memory effects are undesirable. As we shall see later, it is difhcult but not impossible to design in a way that is tolerant of these effects. 

There have been few studies of either phenomenon in OTFTs [8-10]. In general, the bias-stress instability of OTFTs fabricated on inorganic gate dielectrics behaves as follows The primary effect of positive gate bias is to shift the threshold voltage to more positive voltages, and the primary effect of negative bias is to shift the... 

In addition to reversible hysteretic effects, irreversible storage, photoin-duced, and bias-stress can also be observed in many OFET systems. Repeated characterization through the application of the stressor will expose these effects. 

Piezoelectrics have been the sensing and broadcasting element of underwater acoustics since its inception. Passive sensors are designed to detect acoustic signals by converting pressure waves or vibrations into electrical signals. Ignoring temperature, bias stress, and electrostrictive effects, Eqs. (3.18) and (3.20) reduce to ... 

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