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Bending principle

Nadler, D. A., Tushman, M. L. (1989). Organizational frame bending Principles for managing reorientation. Academy of Management Executive, 3, 194-204. [Pg.591]

Fig. 9 (a) Schematic stmcture of a tri-layer conducting polymer actuator and (b) schematic representation of the bending principle. This actuator is anion driven the anions in the salt move into the positively charged electrode to cause a volmne expansion. If it is cation driven, the cations in the salt move into the negatively charged electrode to cause volume expansion hence, the bending direction will be from the negative electrode to the positive electrode - the opposite of what is shown (Alici 2009)... [Pg.267]

Figure Bl.19.23. Principle of simultaneous measurement of nomial and lateral (torsional) forces. The intensity difference of the upper and lower segments of the photodiode is proportional to the z-bending of the cantilever. The intensity difference between the right and left segments is proportional to the torsion, t, of the force sensor. (Taken from [110], figure 2.)... Figure Bl.19.23. Principle of simultaneous measurement of nomial and lateral (torsional) forces. The intensity difference of the upper and lower segments of the photodiode is proportional to the z-bending of the cantilever. The intensity difference between the right and left segments is proportional to the torsion, t, of the force sensor. (Taken from [110], figure 2.)...
Elbow flow meters. The principle of centrifugal force at the bend is used to obtain the difference in pressure at the inside and outside of the elbow, which is then related to the discharge pressure. [Pg.699]

Usually the constants involved in these cross terms are not taken to depend on all the atom types involved in the sequence. For example the stretch/bend constant in principle depends on all three atoms. A, B and C. However, it is usually taken to depend only on the central atom, i.e. = k , or chosen as a universal constant independent of atom type. It should be noted that cross tenns of the above type are inherently unstable if the geometry is far from equilibrium. Stretching a bond to infinity, for example, will make str/bend go towards — oo if 0 is less than If the bond stretch energy itself is harmonic (or quartic) this is not a problem as it approaches +oo faster, however, if a Morse type potential is used, special precautions will have to be made to avoid long bonds in geometry optimizations and simulations. [Pg.26]

Fulcrum technique Utilizes a bending movement principle to create a force on the bit to counteract reaction forces that are tending to push the bit in a given direction. [Pg.1080]

In this case, the fluid column has a uniform cross section, so the area of the output piston is the same as the area of the input piston, or 10 square inches. Therefore, the upward force on the output piston is 100 pounds and is equal to the force applied to the input piston. All that was accomplished in this system was to transmit the 100 pounds of force around the bend. However, this principle underlies practically all mechanical applications of hydraulics or fluid power. [Pg.593]

FIGURE 35.42 Illustration of the outer roll bending working principle. [Pg.1008]

Tape >System of Analysis. A tape system which is used widely for analysis in the Pediatric Laboratory is a system whose principle was developed by the author. A reagent is placed on a paper tape. The paper is covered with a membrane, such as cellophane, cellulose nitrate or cellulose acetate, porous to low molecular weight substances. Finally, the serum is placed above the porous membrane, so that diffusion of the components of serum take place and a stain is produced on the paper (60). This principle has been incorporated for example, with glucose oxidase, in the conmercially available Dextro-Sticks. In addition, a similar principle is being applied by some for the analysis of components in urine (Ames Co., South Bend, Indiana). [Pg.146]

The operation principle of these TFTs is identical to that of the metal-oxide-semiconductor field-effect transistor (MOSFET) [617,618]. When a positive voltage Vg Is applied to the gate, electrons are accumulated in the a-Si H. At small voltages these electrons will be localized in the deep states of the a-Si H. The conduction and valence bands at the SiN.v-a-Si H interface bend down, and the Fermi level shifts upward. Above a certain threshold voltage Vth a constant proportion of the electrons will be mobile, and the conductivity is increased linearly with Vg - Vih. As a result the transistor switches on. and a current flows from source to drain. The source-drain current /so can be expressed as [619]... [Pg.177]

The fact that Ac is proportional to the bending radius is used in so-called insertion devices such as wiggler and undulator magnets.t Although a description of these is beyond the scope of this chapter, the basic principle behind these is to make the electron beam undergo sharp serpentine motions (thereby having a very short radius of curvature). The net effect is to increase the flux and the critical energy (see topmost curve in Fig. 5). [Pg.271]

Insertion devices are placed in the electron path of a synchrotron. They increase the photon flux by several orders of magnitude. Similar to the FEL principle they operate by forcing the electrons on a wavy path. At each bend of the path synchrotron light is emitted. In contrast to the FEL device there is no coherence. Instead, the light intensity sums up to form the effective beam. Two kind of insertion devices are used. In wigglers the curvature of the electron path is high. In undulators it is relatively low. [Pg.64]

Without this and without that — that s not proof. We must show their positive intentions. Probably these judges will bend over backward to apply the principles of Anglo-American law. We have to have those dates clear, and we have to have the unsworn statements sworn to, wherever possible, even if it delays our going to trial."... [Pg.70]


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See also in sourсe #XX -- [ Pg.267 ]




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