Gallium halides arsenic

The halides, GaQs, AlBrs, A1C13, and FeCl3, very probably also exist in dimeric form. With these halides, however, the complexation reaction with the azide is the fast step so that no square-root term is found in the kinetic equation. Arsenic trichloride, arsenic tribromide, phosphorus trichloride, and phosphorus pentachloride were without effect on the rate of decomposition of benzoyl azide. Finally, the authors have observed that the catalytic influence of boron tribromide was much higher than all the other halides. Its rate constant was estimated to be about 18 times larger than that for gallium chloride. 

Gallium(III) complexes, 129 amines, 129 amino acids, 141 arsenates, 135 borates, 134 borohydrides, 141 bromates, 135 carbonates, 134 caiboxylates, 135 chlorates, 135 citrates, 136 cyanides, 129 dithiocarbamates, 138 ethers, 136 fluorides, 138 germanates, 134 hydrides, 140 iodates, 135 p-ketoenolates, 134 lactates, 136 mixed halides, 139 molybdates, 135 nitrates, 135 peptides, 141 perchlorates, 135... 

While group III-V (e.g., gallium phosphide and gallium arsenide) and group II-VI (e.g., mercury cadmium tellurium) semiconductor devices are far less common than silicon semiconductors, CVD operations for them have certain chemistries unique in semiconductor manufacturing.[4 l-[43] Halide CVD processes used in the manufacture of some III-V devices utilize arsenic trichloride and phosphoms trichloride as source chemicals.[ 2][ l... 

---