Annealing SIMS depth profiling

Annealing. SIMS depth profiles are frequently utilized during the development and Investigation of annealing processes. Some of the diffusion processes are too complex and not now well enough understood to be accurately predicted. SIMS depth profiles were used to study the effect of annealing Ion Implanted phosphorus In SI (2fl). Profiles from samples annealed at different temperatures show the presence of two distinct components of the P... 

Figure 5. SIMS depth profiles of Ti/thin Cu films on polyimide as deposited, showing O18 from polyimide and ambient humidity exposure exposed to H2018 and annealed in nitrogen at 350 C...

Figure 6. SIMS depth profiles of Ti/thick Cu peel strip surfaces originally deposited on polyimide, exposed to h2ol8 and peeled (a) as-deposited and (b) after 350"C forming gas anneal (200W,30min RF)...

Figure 8. SIMS depth profiles of Cr/thin Cu films on polyimide (a) as deposited, showing O 8 from ambient humidity exposure (normalized for isotopic abundance) (b) exposed to H2018 and (c) exposed to H,018 and annealed in forming gas at 350 C (200 W, 30 min RF) and (d) exposed to H20 8 and annealed in forming gas at 350 (50 W, 10 min RF).

Indispensable and continue to be Important In the development of models for range statistics In Ion Implantation. SIMS depth profiles are also used to monitor and develop an understanding of the diffusion of dopants during laser and thermal annealing processes. Metallization and thin films have also been Investigated by SIMS. In addition SIMS depth profiles are useful for failure analysis and problem solving. 

The effect of encapsulation during annealing was also found to be Important In the redistribution of Cr In GaAs (iQ). SIMS depth profiles showed that Cr was depleted near the surface for both... 

Laser annealing processes are much less well characterized than the thermal annealing processes discussed above. SIMS depth profiles have been used to study these processes (44). The use of excimer lasers for semiconductor processing was recently reported. SIMS depth profiles of B In SI after XeCl laser annealing showed a nearly flat B distribution to a Junction depth of about 0.9 pm with an Initial Implant peak of about 0.3 pm... 

Figure 3.21. A dynamic SIMS depth profile showing the volume fraction of a polystyrene of relative molecular mass 29000, with both ends carboxy terminated, in a matrix of deuterium-labelled, normally terminated polystyrene of relative molecular mass 500000, after annealing at 160 °C for 36 h. The volume fraction, derived from the intensity of the CH ion, is measured as a function of the distance from the substrate, which is a native-oxide-coated silicon wafer. After Zhao et al. (1991).

FIGURE 4.31. The SIMS depth profile of Cr for Cr-doped NiO annealed under reducing and oxidizing conditions (Ar and air, respectively). (Adapted from Hirschwald, W., Sikora, I., and Stolze, F., Surf. Interface Anal, 1982, 18, 277-283.)... 

Fig. 8. SIMS analysi.s of the ripple experiment. Exces.s deuterium depth profiles for the HDH + DHD bilayer annealed at 118°C (a) The ripple inereasing from 30 to 1080 min. (b) The ripple amplitude deereasing with inereasing time from 1080 to 2880 min [20,57].

In related experiments by Johnson (1985), atomic deuterium was used instead of Hx to neutralize boron in Si. Similar results on spreading resistance were obtained. Furthermore, the distribution profile of D was measured by secondary-ion mass spectrometry (SIMS), as shown in Fig. 4. The distribution profile of D reveals 1) that the penetration depth of D is in good agreement with the resistivity profile and 2) that the D concentration matches the B concentration over most of the compensated region. In another sample, the B was implanted at 200 keV with a dose of 1 x 1014 cm-2, the damage was removed by rapid thermal anneal at 1100°C for 10 sec., and then D was introduced at 150°C for 30 min. As shown in Fig. 5, it is remarkable that the D profile conforms to the B profile. 

Fig. 8. SIMS profiles of 2H and nB in plasma-passivated B-implanted and annealed samples used in channeling studies of B—H complexes by Marwick et al. (1988). 1000 angstroms was etched off the surface of this sample to eliminate a layer containing a large excess of hydrogen. Nevertheless, some excess over the boron concentration remains at shallow depths. The histogram shows the deuterium profile used to analyze the data using calculated flux profiles.

This Datareview discusses the redistribution of typical dopant atoms in GaN during the implant activation anneal. Secondary ion mass spectroscopy (SIMS) spectra of the impurity profiles (impurity concentration versus depth into the sample) before (as-implanted) and after annealing are presented. SIMS analysis is the primary method of characterising impurity distributions in semiconductors [2], This information can be used to roughly estimate a diffusivity, D , of the dopant at the temperatures studied by invoking the relationship... 

---