Trap Depth Profiling

At present GDMS164 165 is one of the most powerful solid-state analytical methods for the direct determination of trace impurities and depth profiling of solids. The positively charged ions formed in the low pressure argon plasma of the glow discharge are extracted and accelerated into the double-focusing sector field mass spectrometer, quadrupole, ion trap or ToF mass analyzer. 

During the fifth (and last) sampling date, a profile of 234Th was sampled between the surface and the trap depth (60 m) at each station. Immediately after sampling, the 20 1 of seawater was passed through a 0.45 pm pore size filter to separate dissolved from particulate phases. Within one month after the collection, particulate... 

The comparison of the depth profiles for Ag diffusion in DIP and TMC-PC indicated a similar diffusion mechanism for polymers and organic crystalline materials. For TMCPC, it was shown that a submonolayer of Cr can effectively block the diffusion of Ag into the polymer [13]. Since Cr is a transition metal, it is very reactive. The Cr atoms immediately react with the polymer and do not diffuse into the bulk. On the surface they act as nucleation centres for Ag atoms impinging onto and diffusing across the organic surface. As more Ag atoms are trapped on the surface, diffusion into the material is reduced. If... 

In the following, we present the results of charge transient spectroscopy performed on the bottom contacted pentacene OFETs, a variant of DLTS where the current transient is integrated, yielding a charge transient [43, 44]. In combination with capacitance DLTS, this technique can also provide information on the depth profile of the trap distribution [45]. 

DBST (p,p -dibutylsexithiophene) 77, 80 ff DCNDBQT (a,cD-dicyano-p,p -dibutyl-quaterthiophene) 76 ff deep level transient spectroscopy (DLTS) 428, 437, 438 deep trap 437, 433, 441 deformation pattern 264, 276 degradation 373 ff., 393 ff, 553 demodulated reader signal 9 density functional theory (DFT) 264, 539 density of states (DOS) 428, 437 depth profile 404 ff., 436, 544 de-trapping 428, 437 ff, 441 device simulation 433, 435 dewetting, post-deposition 220 ff. DHBTP-SC ((dihexylbithiophene)2-phe-nyl swivel cruciform) 96 ff. 

SIMS depth profiling of Cu. The data revealed no trapping effect of Cu in the case of a reference sample where no porous silicon barrier was implemented. In the case of sample including porous silicon layer, an increased Cu concentration was observed in the depth corresponding to porous silicon multilayer stack (see Fig. 1). 

Fig. 4.15 Simultaneous depth profiles of deuterium and krypton in nickel implanted with 2 x lO Kr atoms/cm. Deuterium was introduced by electrolysis and (a) shows the profile aflCT the initial introduction of deuterium and (b) shows the profile aflertwo more introductions of deuterium with an anneal at 87 °C after the second introduction. Traps from the krypton implantation are filled by deuterium...

Another conceivable limiting case, though one less likely to be approached in practical cases, is that where the total hydrogen concentration always remains far below that of the traps, which continue to capture hydrogen irreversibly. For this case, as Corbett et al. (1986) have pointed out, the concentration of free monatomic hydrogen will approach a quasisteady-state profile that decays exponentially with the depth x. The concentration of trapped hydrogen, of course, will at any point of space approach a linear increase with time. 

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