Thin film reactions, Rutherford

The remaining work discusses two techniques in thin film analysis, Rutherford backscattering spectrometry (RBS) and X-ray diffractrometry with emphasis on strain measurements. Rutherford backscattering spectrometry is illustrated with analysis of silicide formation as an example of thin film reactions. Silicon-germanium-carbon films serve as an example of strain calculations. 

Rutherford backscattering spectrometry analysis determines how the composition varies as a function of depth and is used to characterize thin films and thin film reactions. During ion-beam analysis, the incident particle (typically a proton or helium ion) penetrates into the thin film and undergoes inelastic collisions, with target electrons, and loses energy as it transverses the sample. 

The essentially non-destructive nature of Rutherford backscattering spectrometry, combined with the its ability to provide both compositional and depth information, makes it an ideal analysis tool to study thin-film, solid-state reactions. In particular, the non-destructive nature allows one to perform in situ RBS, thereby characterizing both the composition and thickness of formed layers, without damaging the sample. Since only about two minutes of irradiation is needed to acquire a Rutherford backscattering spectrum, this may be done continuously to provide a real-time analysis of the reaction [6]. 

---