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Thermal Equilibrium Processes

In Part II we discussed how to measure the electrical parameters n and pn (and/or p and pp), namely, by means of the conductivity and Hall coefficient. Now we must ask how these parameters relate to the more fundamental quantities of interest, such as impurity concentrations and impurity activation energies. Much can be learned from a consideration of thermal excitation processes only, i.e., processes in which the only variable parameter is temperature. Thus, we are specifically excluding cases involving electron or hole injection by high electric fields or by light. We are also excluding systems that have been perturbed from their thermal equilibrium state and have not yet had sufficient time to return. Some of these nonequilibrium situations will be considered in Part IV. [Pg.86]

Given some knowledge about the valence and conduction bands, we would like to determine the distribution of available electrons among the various energy states of these bands. Free electrons and holes are effectively noninteracting, and it is a common textbook problem to show [Pg.86]

We depart briefly from our discussion of SI GaAs to consider an example that better illustrates some of the features of temperature-dependent Hall measurements. This example (Look et al., 1982a) involves bulk GaAs samples that have sc — F — 0-15 eV. We suppose, initially, that the impurity or defect controlling the Fermi level is a donor. Then any acceptors or donors above this energy (by a few kT more) are unoccupied and any below are occupied. Also, p n for kT eG. From Eq. (B34), Appendix B, we get [Pg.87]

Here N c = 2(2nm k)3ll/h3, and aD is defined by D = E00 — aDT (Van Vechten and Thurmond, 1976). Note that D, the ionization energy, is an inherently positive quantity, defined here with respect to the conduction band. We consider two limiting cases  [Pg.88]

we see that a plot of In n/T3/2 versus 1/T should be a straight line of slope - do//c at low temperatures. At high temperatures, n approaches a constant, since all available (uncompensated) electrons from the donor of interest have entered the conduction band. The four parameters that may be determined from a fit of Eq. (12) are N0, NAS - NDS, EO0, and (0Do/0Di)exp(aD/7c). We assume that m is known. [Pg.88]


In contrast to the detonation of gaseous materials, the detonation process of explosives composed of energetic solid materials involves phase changes from solid to liquid and to gas, which encompass thermal decomposition and diffusional processes of the oxidizer and fuel components in the gas phase. Thus, the precise details of a detonation process depend on the physicochemical properties of the explosive, such as its chemical structure and the particle sizes of the oxidizer and fuel components. The detonation phenomena are not thermal equilibrium processes and the thickness of the reachon zone of the detonation wave of an explosive is too thin to identify its detailed structure.[i- i Therefore, the detonation processes of explosives are characterized through the details of gas-phase detonation phenomena. [Pg.257]

Depending on the method of pumping, the population of may be achieved by — Sq or S2 — Sq absorption processes, labelled 1 and 2 in Figure 9.18, or both. Following either process collisional relaxation to the lower vibrational levels of is rapid by process 3 or 4 for example the vibrational-rotational relaxation of process 3 takes of the order of 10 ps. Following relaxation the distribution among the levels of is that corresponding to thermal equilibrium, that is, there is a Boltzmann population (Equation 2.11). [Pg.360]

A simplified schematic diagram of transitions that lead to luminescence in materials containing impurides is shown in Figure 1. In process 1 an electron that has been excited well above the conduction band et e dribbles down, reaching thermal equilibrium with the lattice. This may result in phonon-assisted photon emission or, more likely, the emission of phonons only. Process 2 produces intrinsic luminescence due to direct recombination between an electron in the conduction band... [Pg.152]

A large number of Brpnsted and Lewis acid catalysts have been employed in the Fischer indole synthesis. Only a few have been found to be sufficiently useful for general use. It is worth noting that some Fischer indolizations are unsuccessful simply due to the sensitivity of the reaction intermediates or products under acidic conditions. In many such cases the thermal indolization process may be of use if the reaction intermediates or products are thermally stable (vide infra). If the products (intermediates) are labile to either thermal or acidic conditions, the use of pyridine chloride in pyridine or biphasic conditions are employed. The general mechanism for the acid catalyzed reaction is believed to be facilitated by the equilibrium between the aryl-hydrazone 13 (R = FF or Lewis acid) and the ene-hydrazine tautomer 14, presumably stabilizing the latter intermediate 14 by either protonation or complex formation (i.e. Lewis acid) at the more basic nitrogen atom (i.e. the 2-nitrogen atom in the arylhydrazone) is important. [Pg.117]

It may be concluded that during the contact time in the competing process for the energy in the various spin systems, the carbon atoms are trying to reach thermal equilibrium with the proton polarization, which is in itself decreasing with a time constant, (Tig, H). In fact the protons undergo spin diffusion and can be treated together, whereas the carbon atoms behave individually. Therefore one implication is that we can also expect to obtain a C-13 spin polarization proportional to the proton polarization. [Pg.19]

Briquettes of CaO with 5-20% excess powdered A1 are heated under vacuum to 1170°C in a Ni-Cr steel (15/28) retort in which the Ca vapor, produced by reduction of solid CaO by A1 vapor, is condensed in a zone at 680-740 C. Any Mg impurity is condensed in a zone at 275-350°C a mixture of the two metals condenses in an intermediate zone. The A1 content of the product can be reduced by passing the metal vapor, before it condenses, through a vessel filled with solid CaO. The adaptation of the FeSi thermal reduction process for Mg production (see 7.2.3.2.1) to Ca manufacture has also been described but is not economically viable in comparison with the above process. The thermal reduction of CaO with carbon has been proposed as for Mg production, however, the reversibility of the equilibrium ... [Pg.376]

Two methods have been used to calculate the conversion rate in the reactor. They are based on thermal balances first between inlet and outlet of process and utility streams in the reactor and then between sampling and thermal equilibrium in the Dewar vessel. The former leads to the conversion rate obtained in the reactor, x and the latter gives the conversion rate downstream from the reactor outlet, 1 - X-... [Pg.279]

If the radiofrequency power is too high, the normal relaxation processes will not be able to compete with the sudden excitation (or perturbation), and thermal equilibrium will not be achieved. The population difference (Boltzmann distribution excess) between the energy levels (a and )8) will decrease to zero, and the intensity of the absorption signal will also therefore become zero. [Pg.85]

If only single-quantum transitions (h, I2, S], and S ) were active as relaxation pathways, saturating S would not affect the intensity of I in other words, there will be no nOe at I due to S. This is fairly easy to understand with reference to Fig. 4.2. After saturation of S, the fMjpula-tion difference between levels 1 and 3 and that between levels 2 and 4 will be the same as at thermal equilibrium. At this point or relaxation processes act as the predominant relaxation pathways to restore somewhat the equilibrium population difference between levels 2 and 3 and between levels 1 and 4 leading to a negative or positive nOe respectively. [Pg.207]

The Monte Carlo method as described so far is useful to evaluate equilibrium properties but says nothing about the time evolution of the system. However, it is in some cases possible to construct a Monte Carlo algorithm that allows the simulated system to evolve like a physical system. This is the case when the dynamics can be described as thermally activated processes, such as adsorption, desorption, and diffusion. Since these processes are particularly well defined in the case of lattice models, these are particularly well suited for this approach. The foundations of dynamical Monte Carlo (DMC) or kinetic Monte Carlo (KMC) simulations have been discussed by Eichthom and Weinberg (1991) in terms of the theory of Poisson processes. The main idea is that the rate of each process that may eventually occur on the surface can be described by an equation of the Arrhenius type ... [Pg.670]

The addition of heat shifts the equilibrium concentrations away from the products and back towards the reactants, the monomers. This is one reason why processing these types of polymers is often more difficult than processing products of chain growth mechanisms. The thermal degradation process can be dramatically accelerated by the presence of the low molecular weight condensation products such as water. Polyester, as an example, can depolymerize rapidly if processed in the presence of absorbed or entrained water. [Pg.194]

Minima in Ti are usually above the So hypersurface, but in some cases, below it (ground state triplet species). In the latter case, the photochemical process proper is over once relaxation into the minimum occurs, although under most conditions further ground-state chemistry is bound to follow, e.g., intermolecular reactions of triplet carbene. On the other hand, if the molecule ends up in a minimum in Ti which lies above So, radiative or non-radiative return to So occurs similarly as from a minimum in Si. However, both of these modes of return are slowed down considerably in the Ti ->-So process, because of its spin-forbidden nature, at least in molecules containing light atoms, and there will usually be time for vibrational motions to reach thermal equilibrium. One can therefore not expect funnels in the Ti surface, at least not in light-atom molecules. [Pg.20]


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