The Growth Technology

The rapidly increasing consumption of optoelectronic and solar cell devices and development of high yield automated production tools may bring the production level of compound semiconductors from the percent level to the few percent levels of silicon production. Already the increased demand and competition has forced equipment vendors and merchant houses of epitaxial films to incorporate many of the features associated with Si production (automated clean room production) to this market place. As the economies of production, automation, scale, and improved yield grow, so to will the reliance on these materials for more and more high performance applications. Early in the next century, we can expect to see significant increases in the utilization of compound semiconductors in a wide variety of commonplace applications. 

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The growth technology of four-inch crystal along [OlTl], which is the optimal orientation for the wafer fabrication for SAW device use, is optimized by elucidating... 

This rapid increase in research interests is due largely to the growth in computer technology, particularly, in software and hardware advances in multiprocessor technology. 

Although there has been theoretical and experimental interest in the effects of ion bombardment on materials since about 1960 (153), the growth in ion implantation technology and appHcations since then is due almost solely to the semiconductor (integrated circuit) industry. The advantages of ion implantation for semiconductor doping were first pointed out in 1955 (154), but these advantages were not widely accepted until about 1970. 

Space Applications. The growth of powder metahurgy in space technology has arisen from the difficulty of handling many materials in conventional fusion-metahurgy techniques, the need for controhed porosity, and the requirement of many special and unique properties (60,61). Powder metahurgy is applied in low density components with emphasis on porous tungsten for W—Ag stmctures, beryhium compounds, titanium and... 

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