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Superlattice semiconductor heterostructures

Recently, much attention has been paid to the importance of the quantum function realized by micro- and mesoscopically controlled semiconductor heterostructures. Conducting polymer heterolayers, leading to a conducting polymer superlattice exhibiting quantum size effects, should take an important place in both novel electronic and optical devices. [Pg.301]

Materials such as quasicrystals, high-temperature superconductors, semiconductor heterostructures and superlattices are typical examples of materials produced in nonequilibrium conditions. [Pg.459]

DJ Olego, K Shazad, J Petruzello, D Cammack. Depth profiling of elastic strains in lattice-mismatched semiconductor heterostructures and strained-layer superlattices. Phys Rev B 36 7674-7677, 1987. [Pg.553]

Heterostructures and Superlattices. Although useful devices can be made from binary compound semiconductors, such as GaAs, InP, or InSb, the explosive interest in techniques such as MOCVD and MBE came about from their growth of ternary or quaternary alloy heterostmctures and supedattices. Eor the successful growth of alloys and heterostmctures the composition and interfaces must be accurately controlled. The composition of alloys can be predicted from thermodynamics if the flow in the reactor is optimised. Otherwise, composition and growth rate variations are observed... [Pg.369]

A new chapter in the uses of semiconductors arrived with a theoretical paper by two physicists working at IBM s research laboratory in New York State, L. Esaki (a Japanese immigrant who has since returned to Japan) and R. Tsu (Esaki and Tsu 1970). They predicted that in a fine multilayer structure of two distinct semiconductors (or of a semiconductor and an insulator) tunnelling between quantum wells becomes important and a superlattice with minibands and mini (energy) gaps is formed. Three years later, Esaki and Tsu proved their concept experimentally. Another name used for such a superlattice is confined heterostructure . This concept was to prove so fruitful in the emerging field of optoelectronics (the merging of optics with electronics) that a Nobel Prize followed in due course. The central application of these superlattices eventually turned out to be a tunable laser. [Pg.265]

Given such technological possibilities, it was logical to try to apply them to the formation of a complicated heterostructure—semiconductor superlattices. [Pg.187]

F. Capasso, Graded-Gap and Superlattice Devices by Band-gap Engineering W. T. Tsang, Quantum Confinement Heterostructure Semiconductor Lasers... [Pg.653]

Superlattices result from the periodic infinite repetition of heterostructures. MBE-grown superlattices of III-V semiconductors exhibit sharp interfaces and high carrier mobilities of the resulting 2D carrier gas at low temperature (Ando et al, 1982). To date no superconductivity has been found for such engineered solids, although some expectations were raised in 2000 after some reports on the obten-tion of superconductivity in semiconductor/insulator interfaces by field-induced... [Pg.179]

Ultraviolet Raman spectroscopy has emerged as a powerful technique for characterization of nanoscale materials, in particular, wide-bandgap semiconductors and dielectrics. The advantages of ultraviolet excitation for Raman measurements of ferroelectric thin films and heterostructures, such as reduced penetration depth and enhanced scattering intensity, are discussed. Recent results of application of ultraviolet Raman spectroscopy for studies of the lattice dynamics and phase transitions in nanoscale ferroelectric structures, such as superlattices based on BaTiOs, SrTiOs, and CaTiOs, as well as ultrathin films of BaTiOs and SrTi03 are reviewed. [Pg.587]

For this newly considered superlattice, the unusual feature lies in the fact that the valence-band in one host semiconductor GaSbAs (barriers) is actually located very close to the conduction-band bottom in the other host semiconductor InGaAs, thus a strong interaction exists between these bands despite the fact that each individual compound has a relatively wide bandgap. Hence the description of quantum transport processes within this heterostructure is a multi-band problem. In studies presented here, multi-band... [Pg.135]

Antimonide-related Strained-layer Heterostructures (ed.) M.O. Manasreh, 1997, in Optoelectronic Properties of Semiconductors, Superlattices, Vol. 3, Gordon and Breach Science Publishers, Amsterdam, The Netherlands. [Pg.333]


See other pages where Superlattice semiconductor heterostructures is mentioned: [Pg.409]    [Pg.249]    [Pg.254]    [Pg.356]    [Pg.266]    [Pg.569]    [Pg.165]    [Pg.160]    [Pg.24]    [Pg.3]    [Pg.5]    [Pg.3199]    [Pg.197]    [Pg.417]    [Pg.297]    [Pg.461]    [Pg.3111]    [Pg.516]    [Pg.431]   
See also in sourсe #XX -- [ Pg.254 , Pg.255 , Pg.256 ]




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