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Sputter deposition pulse power

The process data for the sputter deposition of cBN films by RF (13.56 MHz) diode sputtering with hBN and B4C targets as well as by d.c. magnetron sputtering with B4C targets have been reported in detail elsewhere [21,24,54]. In both configurations the ionization was enhanced by additional magnetic coils positioned around the substrate holder. The substrate electrodes were operated either with a d.c. potential, with pulsed d.c. [57] or with RF power. [Pg.430]

Lin J, Moore W, Sproul B, Mishra N, Wang J. The structure and properties of Cr-nitride coatings deposited using DC, pulsed DC and modulated pulse power magnetron sputtering. Surf Coat Technol 2010 204 2230-9. [Pg.259]


See other pages where Sputter deposition pulse power is mentioned: [Pg.234]    [Pg.940]    [Pg.226]    [Pg.251]    [Pg.252]    [Pg.256]    [Pg.283]    [Pg.313]    [Pg.173]    [Pg.227]    [Pg.495]    [Pg.222]    [Pg.241]    [Pg.300]    [Pg.218]    [Pg.941]    [Pg.945]    [Pg.158]    [Pg.278]    [Pg.95]    [Pg.268]    [Pg.275]    [Pg.296]    [Pg.302]   
See also in sourсe #XX -- [ Pg.251 ]




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Deposition pulse

Pulse power

Sputtered

Sputtering

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